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CXDM3069N TR

CXDM3069N TR
Mfr. #:
CXDM3069N TR
Fabricante:
Central Semiconductor
Descripción:
MOSFET 30Vds N-Ch Enh FET 12Vgs 40A 1.2W 6.9A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
CXDM3069N TR Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
CXDM3069N TR más información
Atributo del producto
Valor de atributo
Fabricante:
Semiconductor central
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOT-89
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
6.9 A
Rds On - Resistencia de la fuente de drenaje:
50 mOhms
Vgs - Voltaje puerta-fuente:
12 V
Qg - Carga de puerta:
11 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
1.2 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Serie:
CXDM
Tipo de transistor:
1 N-Channel
Marca:
Semiconductor central
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Parte # Alias:
CXDM3069N PBFREE TR
Unidad de peso:
0.004603 oz
Tags
CXDM, CXD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
N-Channel Enhancement Mode MOSFET High Current 30V 6.9A 3-Pin SOT-89 T/R
***i-Key
MOSFET N-CH 30V 6.9A SOT-89
***ure Electronics
N-Channel 30 V 120 mOhm SMT Enhancement Mode Mosfet - SOT-89
***ical
Trans MOSFET N-CH 30V 3.3A Automotive 4-Pin(3+Tab) SOT-89 T/R
***ark
Mosfet, N-Ch, 30V, 3.3A, Sot-89 Rohs Compliant: Yes
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
***ure Electronics
N-Channel 60 V 3.2 A 1 W Surface Mount OptiMOS™ Small-Signal-Transistor - SOT-89
***ow.cn
Trans MOSFET N-CH 60V 3.2A Automotive 4-Pin(3+Tab) SOT-89 T/R
***nell
MOSFET, AEC-Q101, N-CH, 60V, SOT-89; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.2A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.047ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 1W; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 3 Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 3.2 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 60 / Gate-Source Voltage V = 20 / Fall Time ns = 2.1 / Rise Time ns = 2.6 / Turn-OFF Delay Time ns = 13 / Turn-ON Delay Time ns = 5.6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-89 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1
***p One Stop Global
Trans MOSFET P-CH 250V 0.19A Automotive 4-Pin(3+Tab) SOT-89 T/R
***ure Electronics
Single P-Channel 250 V 12 Ohm 4.9 nC SIPMOS® Small Signal Mosfet - SOT-89
***ment14 APAC
MOSFET, P-CH, -250V, -0.19A, SOT-89-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-190mA; Source Voltage Vds:-250V; On
***nell
MOSFET, P-CH, -250V, -0.19A, SOT-89-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -190mA; Drain Source Voltage Vds: -250V; On Resistance Rds(on): 7.7ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.5V; Power Dissipation Pd: 1W; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C
***ineon
Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger
***trelec
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 190 / Drain-Source Voltage (Vds) V = 250 / ON Resistance (Rds(on)) Ohm = 12 / Gate-Source Voltage V = 20 / Fall Time ns = 50 / Rise Time ns = 5.2 / Turn-OFF Delay Time ns = 72 / Turn-ON Delay Time ns = 4.7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-89 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1
*** Electronics
In a Pack of 100, N-Channel MOSFET, 260 mA, 240 V, 3-Pin SOT-89 Infineon BSS87H6327XTSA1
***ical
Trans MOSFET N-CH 240V 0.26A Automotive 4-Pin(3+Tab) SOT-89 T/R
***ment14 APAC
MOSFET, N, LOGIC, SOT-89; Transistor Polarity:N Channel; Continuous Drain Current Id:290mA; Drain Source Voltage Vds:240V; On Resistance Rds(on):6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:1W; Transistor Case Style:SOT-89; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:290mA; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-89; Power Dissipation Pd:1W; Power Dissipation Pd:1W; Power Dissipation Ptot Max:1W; Pulse Current Idm:1.16A; SMD Marking:KA; Termination Type:SMD; Voltage Vds Typ:240V; Voltage Vgs Max:1.2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
***ineon
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 260 / Drain-Source Voltage (Vds) V = 240 / ON Resistance (Rds(on)) Ohm = 6 / Gate-Source Voltage V = 20 / Fall Time ns = 27.3 / Rise Time ns = 3.5 / Turn-OFF Delay Time ns = 17.6 / Turn-ON Delay Time ns = 3.7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-89 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1
***(Formerly Allied Electronics)
PCP1402-TD-H N-channel MOSFET Transistor; 1.2 A; 250 V; 3-Pin SOT-89
***ure Electronics
Single N-Channel 250 V 3.5 W 4.2 nC Silicon Surface Mount Mosfet - SOT-89
***emi
Single N-Channel Power MOSFET, 250V, 1.2A, 2.4Ω
***ical
Trans MOSFET N-CH 250V 1.2A 4-Pin(3+Tab) SOT-89 T/R
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:1.2A; On Resistance Rds(On):1.8Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V Rohs Compliant: Yes
***nell
NCH 10V DRIVE SERIES; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.2A; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 1.8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 3.5W; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***et Europe
Trans MOSFET P-CH 100V 1.5A 3-Pin PCP
***i-Key Marketplace
2SJ670 - P-CHANNEL SILICON MOSFE
***nell
MOSFET, P CH, 100V, 1.5A, SOT89; Transistor Polarity:P-Channel; Current Id Max:-1.5A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):410mohm; Rds(on) Test Voltage Vgs:-10V; Voltage Vgs Max:20V; Power Dissipation:3.5W; Transistor Case Style:SOT-89; No. of Pins:3
CxxDM Surface Mount Enhancement-Mode MOSFETs
Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs are designed for high speed pulsed amplifier and driver applications. Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs offer a very low rDS(ON) and low threshold voltage. The CMLDM5757 consists of dual P-channel enhancement-mode silicon MOSFETs. The CMLDM3757 consists of complementary N-channel and P-channel enhancement-mode silicon MOSFETs. The CMPDM7002AHC is a high current version of the 2N7002A enhancement-mode N-channel MOSFET. And the CEDM7001 is an N-channel enhancement-mode silicon MOSFET, manufactured with the N-channel DMOS process. CEDM8004VL is a P-Channel Enhancement-mode MOSFET, manufactured by the P-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. CEDM7004VL is an N-Channel Enhancement-mode MOSFET, manufactured by the N-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. Learn more
Parte # Mfg. Descripción Valores Precio
CXDM3069N TR
DISTI # CXDM3069NCT-ND		Central Semiconductor CorpMOSFET N-CH 30V 6.9A SOT-89
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		616In Stock
  • 500:$0.5438
  • 100:$0.7342
  • 10:$0.9520
  • 1:$1.0900
CXDM3069N TR
DISTI # CXDM3069NDKR-ND		Central Semiconductor CorpMOSFET N-CH 30V 6.9A SOT-89
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		616In Stock
  • 500:$0.5438
  • 100:$0.7342
  • 10:$0.9520
  • 1:$1.0900
CXDM3069N TR
DISTI # CXDM3069NTR-ND		Central Semiconductor CorpMOSFET N-CH 30V 6.9A SOT-89
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$0.4224
CXDM3069N TR
DISTI # CXDM3069N TR		Central Semiconductor CorpN-Channel Enhancement Mode MOSFET High Current 30V 6.9A 3-Pin SOT-89 T/R - Tape and Reel (Alt: CXDM3069N TR)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.3149
  • 5000:$0.3019
  • 8000:$0.2939
  • 15000:$0.2809
  • 30000:$0.2739
CXDM3069N TR
DISTI # 610-CXDM3069N-TR		Central Semiconductor CorpMOSFET 30Vds N-Ch Enh FET 12Vgs 40A 1.2W 6.9A
RoHS: Compliant		2892
  • 1:$0.8600
  • 10:$0.7450
  • 100:$0.5170
  • 1000:$0.3840
  • 2000:$0.3250
  • 10000:$0.3130
  • 25000:$0.3000
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Disponibilidad
Valores:
842
En orden:
2825
Ingrese la cantidad:
El precio actual de CXDM3069N TR es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,86 US$
0,86 US$
10
0,74 US$
7,45 US$
100
0,52 US$
51,70 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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