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FQA85N06

FQA85N06
Mfr. #:
FQA85N06
Fabricante:
ON Semiconductor
Descripción:
MOSFET N-CH 60V 100A TO-3P
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FQA85N06 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
FQA8, FQA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 60V 100A TO-3P
***ser
MOSFETs 60V N-Channel QFET
***inecomponents.com
60V N-Channel QFET
***ark
MOSFET, N, TO-3P; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:100A; Resistance, Rds On:0.01ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-3P; Termination ;RoHS Compliant: Yes
***nell
MOSFET, N, TO-3P; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:100A; Resistance, Rds On:0.01ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-3P; Termination Type:Through Hole; Current, Idm Pulse:350A; No. of Pins:3; Power Dissipation:214W; Power, Pd:214W; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Voltage, Vds Max:60V
***ment14 APAC
MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:214W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:TO-3P; Power Dissipation Pd:214W; Power Dissipation Pd:214W; Pulse Current Idm:350A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:25V; Voltage Vgs Rds on Measurement:10V
Parte # Mfg. Descripción Valores Precio
FQA85N06
DISTI # FQA85N06-ND		ON SemiconductorMOSFET N-CH 60V 100A TO-3P
RoHS: Compliant
Min Qty: 450
Container: Tube		Limited Supply - Call
    FQA85N06
    DISTI # 512-FQA85N06    		ON SemiconductorMOSFET 60V N-Channel QFET
    RoHS: Compliant    		0
      FQA85N06
      DISTI # 9846093      		ON SemiconductorMOSFET, N, TO-3P
      RoHS: Compliant      		0
      • 25:$5.4100
      • 1:$7.5500
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      Disponibilidad
      Valores:
      Available
      En orden:
      2500
      Ingrese la cantidad:
      El precio actual de FQA85N06 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,00 US$
      0,00 US$
      10
      0,00 US$
      0,00 US$
      100
      0,00 US$
      0,00 US$
      500
      0,00 US$
      0,00 US$
      1000
      0,00 US$
      0,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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