OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

IXFP270N06T3

IXFP270N06T3
Mfr. #:
IXFP270N06T3
Fabricante:
Littelfuse
Descripción:
MOSFET 60V/270A TrenchT3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFP270N06T3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFP270N06T3 DatasheetIXFP270N06T3 Datasheet (P4-P6)
ECAD Model:
Más información:
IXFP270N06T3 más información
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Sic
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
60 V
Id - Corriente de drenaje continua:
270 A
Rds On - Resistencia de la fuente de drenaje:
3.1 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
200 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
480 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
HiPerFET
Embalaje:
Tubo
Serie:
IXF
Tipo de transistor:
1 N-Channel
Marca:
IXYS
Transconductancia directa - Mín .:
83 S
Otoño:
20 ns
Tipo de producto:
MOSFET
Hora de levantarse:
36 ns
Cantidad de paquete de fábrica:
50
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
48 ns
Tiempo típico de retardo de encendido:
39 ns
Unidad de peso:
0.063493 oz
Tags
IXFP2, IXFP, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
60V/270A TRENCHT3 HIPERFET MOSFE
60V TrenchT3 HiPerFET Power MOSFETs
IXYS 60V TrenchT3™ HiPerFET™ Power MOSFETs are ultra low on-resistance, rugged devices designed for industrial power conversion applications. TrenchT3 HiPerFET MOSFETs offer on-resistance as low as 3.1mΩ, can withstand a junction temperature up to 175°C, and are avalanche rated at high avalanche current levels.Due to the high-current carrying capability of the TrenchT3 HiPerFET Power MOSFETs, paralleling multiple devices may not be necessary. This simplifies the power system and improves its reliability at the same time. In addition, the fast intrinsic body diode of TrenchT3 HiPerFET MOSFETs help achieve high efficiency, especially during high-speed switching.IXYS 60V TrenchT3 HiPerFET Power MOSFETs are available in TO-220, TO-263, and TO-247 international standard size packages for design flexibility.Learn More
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Parte # Mfg. Descripción Valores Precio
IXFP270N06T3
DISTI # IXFP270N06T3-ND		IXYS Corporation60V/270A TRENCHT3 HIPERFET MOSFE
RoHS: Compliant
Min Qty: 50
Container: Tube		Temporarily Out of Stock
  • 50:$3.3750
IXFP270N06T3
DISTI # 747-IXFP270N06T3		IXYS CorporationMOSFET 60V/270A TrenchT3
RoHS: Compliant		55
  • 1:$4.8200
  • 10:$4.3100
  • 25:$3.7500
  • 50:$3.6800
  • 100:$3.5400
  • 250:$3.0200
  • 500:$2.8600
  • 1000:$2.4200
  • 2500:$2.0700
Imagen Parte # Descripción
SQ3426AEEV-T1_GE3

Mfr.#: SQ3426AEEV-T1_GE3

OMO.#: OMO-SQ3426AEEV-T1-GE3

 MOSFET 60V Vds -/+20V Vgs AEC-Q101 Qualified
GS61004B-E01-MR

Mfr.#: GS61004B-E01-MR

OMO.#: OMO-GS61004B-E01-MR

 MOSFET 100V 45A E-Mode GaN
NTMFS6B14NT1G

Mfr.#: NTMFS6B14NT1G

OMO.#: OMO-NTMFS6B14NT1G

 MOSFET NFET SO8FL 100V 15A 14MOH
C4D05120E

Mfr.#: C4D05120E

OMO.#: OMO-C4D05120E

 Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 1200V, 5A
MKS4F041004F00MSSD

Mfr.#: MKS4F041004F00MSSD

OMO.#: OMO-MKS4F041004F00MSSD-1190

 Film Capacitors 1uF 20% 250V 8x15x18
SQ3426AEEV-T1_GE3

Mfr.#: SQ3426AEEV-T1_GE3

OMO.#: OMO-SQ3426AEEV-T1-GE3-VISHAY

 MOSFET N-CH 60V 7A 6TSOP
SFH 4556-VAW

Mfr.#: SFH 4556-VAW

OMO.#: OMO-SFH-4556-VAW-OSRAM-OPTO-SEMICONDUCTORS

 RADIAL T1 3/4
CRCW0805100KFKEAC

Mfr.#: CRCW0805100KFKEAC

OMO.#: OMO-CRCW0805100KFKEAC-VISHAY-DALE

 D12/CRCW0805-C 100 100K 1% ET1
C4D05120E

Mfr.#: C4D05120E

OMO.#: OMO-C4D05120E-WOLFSPEED

 Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 1200V, 5A
NTMFS6B14NT1G

Mfr.#: NTMFS6B14NT1G

OMO.#: OMO-NTMFS6B14NT1G-ON-SEMICONDUCTOR

 IGBT Transistors MOSFET NFET SO8FL 100V 15A 14MOH
Disponibilidad
Valores:
55
En orden:
2038
Ingrese la cantidad:
El precio actual de IXFP270N06T3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
4,82 US$
4,82 US$
10
4,31 US$
43,10 US$
25
3,75 US$
93,75 US$
50
3,68 US$
184,00 US$
100
3,54 US$
354,00 US$
250
3,02 US$
755,00 US$
500
2,86 US$
1 430,00 US$
1000
2,42 US$
2 420,00 US$
2500
2,07 US$
5 175,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
Empezar con
Nuevos productos
More Newest Products
Top