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IRF640NLPBF

IRF640NLPBF
Mfr. #:
IRF640NLPBF
Fabricante:
Infineon Technologies
Descripción:
MOSFET MOSFT 200V 18A 150mOhm 44.7nC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF640NLPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF640NLPBF DatasheetIRF640NLPBF Datasheet (P4-P6)IRF640NLPBF Datasheet (P7-P9)IRF640NLPBF Datasheet (P10-P11)
ECAD Model:
Más información:
IRF640NLPBF más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-262-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
200 V
Id - Corriente de drenaje continua:
18 A
Rds On - Resistencia de la fuente de drenaje:
150 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
44.7 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
150 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Altura:
9.45 mm
Longitud:
10.2 mm
Tipo de transistor:
1 N-Channel
Ancho:
4.5 mm
Marca:
Infineon Technologies
Transconductancia directa - Mín .:
6.8 S
Otoño:
5.5 ns
Tipo de producto:
MOSFET
Hora de levantarse:
19 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
23 ns
Tiempo típico de retardo de encendido:
10 ns
Parte # Alias:
SP001563296
Unidad de peso:
0.084199 oz
Tags
IRF640N, IRF640, IRF64, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    G***r
    G***r
    NZ

    Great Deal Many Thanks.

    2019-04-02
    N***v
    N***v
    RU

    Delivery 42 days. No visible damage during delivery and soldering jambs. I haven't checked it yet. Thanks to the seller.

    2019-01-23
    D***v
    D***v
    RU

    No delivery. Money on the dispute returned.

    2019-04-29
    S***h
    S***h
    BY

    The seller is responsible, the packaging is normal, all whole. All good!!!

    2019-06-03
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;TO-262;PD 150W;VGS +/-20V
***ure Electronics
Single N-Channel 200 V 0.15 Ohm 67 nC HEXFET® Power Mosfet - TO-262-3
*** Source Electronics
MOSFET N-CH 200V 18A TO-262 / Trans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-262 Tube
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
N CHANNEL MOSFET, 200V, 18A, TO-262; Tra; N CHANNEL MOSFET, 200V, 18A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:200V; On Resistance Rds(on):150mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. of Pins:3
200-250V HEXFET® Power MOSFETs
Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More
Parte # Mfg. Descripción Valores Precio
IRF640NLPBF
DISTI # V99:2348_13890573		Infineon Technologies AGTrans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		987
  • 10000:$0.6538
  • 5000:$0.6767
  • 2500:$0.6988
  • 1000:$0.7413
  • 500:$0.8645
  • 100:$0.9661
  • 10:$1.1450
  • 1:$1.2932
IRF640NLPBF
DISTI # IRF640NLPBF-ND		Infineon Technologies AGMOSFET N-CH 200V 18A TO-262
RoHS: Compliant
Min Qty: 1
Container: Tube		2168In Stock
  • 1000:$1.0174
  • 500:$1.2056
  • 100:$1.5191
  • 10:$1.8640
  • 1:$2.0500
IRF640NLPBF
DISTI # 27158271		Infineon Technologies AGTrans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		7506
  • 1000:$0.8336
  • 500:$1.0060
  • 100:$1.1491
  • 27:$1.4414
IRF640NLPBF
DISTI # 26198161		Infineon Technologies AGTrans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		987
  • 500:$0.8645
  • 100:$0.9661
  • 10:$1.1450
IRF640NLPBF
DISTI # IRF640NLPBF		Infineon Technologies AGTrans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IRF640NLPBF)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$0.6569
  • 2000:$0.6329
  • 4000:$0.6099
  • 6000:$0.5889
  • 10000:$0.5789
IRF640NLPBF
DISTI # SP001563296		Infineon Technologies AGTrans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-262 (Alt: SP001563296)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€0.6069
  • 10:€0.5399
  • 25:€0.4859
  • 50:€0.4409
  • 100:€0.4049
  • 500:€0.3729
  • 1000:€0.3469
IRF640NLPBF
DISTI # 63J7350		Infineon Technologies AGN CHANNEL MOSFET, 200V, 18A, TO-262,Transistor Polarity:N Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:200V,On Resistance Rds(on):150mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- , RoHS Compliant: Yes1000
  • 1:$1.6800
  • 10:$1.4300
  • 100:$1.1400
  • 500:$0.9980
  • 1000:$0.8270
IRF640NLPBF
DISTI # 70017531		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 200V,RDS(ON) 0.15Ohm,ID 18A,TO-262,PD 150W,VGS +/-20V
RoHS: Compliant		0
  • 650:$2.1500
IRF640NLPBFInternational Rectifier 
RoHS: Not Compliant		2350
  • 1000:$0.8400
  • 500:$0.8800
  • 100:$0.9200
  • 25:$0.9600
  • 1:$1.0300
IRF640NLPBF
DISTI # 942-IRF640NLPBF		Infineon Technologies AGMOSFET MOSFT 200V 18A 150mOhm 44.7nC
RoHS: Compliant		731
  • 1:$1.6800
  • 10:$1.4300
  • 100:$1.1400
  • 500:$0.9980
  • 1000:$0.8270
IRF640NLPBF
DISTI # 8312859		Infineon Technologies AGHEXFET N-CH MOSFET 18A 200V TO-262, PK560
  • 5:£1.3020
  • 25:£1.0280
  • 50:£0.9280
  • 125:£0.8260
  • 250:£0.8100
IRF640NLPBF
DISTI # IRF640NLPBF		Infineon Technologies AGTransistor: N-MOSFET,unipolar,200V,18A,150W,TO262352
  • 1:$1.0200
  • 3:$0.9600
  • 10:$0.8100
  • 100:$0.7300
IRF640NLPBF
DISTI # 2576887		Infineon Technologies AGMOSFET, N-CH, 200V, 18A, TO-262-3
RoHS: Compliant		1000
  • 1:$2.6600
  • 10:$2.2700
  • 100:$1.8100
  • 500:$1.5800
  • 1000:$1.3200
IRF640NLPBF.
DISTI # 9537511		Infineon Technologies AGN CHANNEL MOSFET, 200V, 18A, TO-262
RoHS: Compliant		64
  • 1:$1.0300
IRF640NLPBF
DISTI # 2576887		Infineon Technologies AGMOSFET, N-CH, 200V, 18A, TO-262-3
RoHS: Compliant		1025
  • 5:£1.2000
  • 25:£0.8260
  • 100:£0.8220
  • 250:£0.8180
  • 500:£0.7630
IRF640NLPBF
DISTI # C1S322000481453		Infineon Technologies AGTrans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		987
  • 500:$0.8645
  • 100:$0.9661
  • 10:$1.1450
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Mfr.#: B66366A2000X000

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Disponibilidad
Valores:
Available
En orden:
1984
Ingrese la cantidad:
El precio actual de IRF640NLPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,67 US$
1,67 US$
10
1,42 US$
14,20 US$
100
1,14 US$
114,00 US$
500
1,00 US$
499,00 US$
1000
0,83 US$
827,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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