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GS81302TT37E-300

GS81302TT37E-300
Mfr. #:
GS81302TT37E-300
Fabricante:
GSI Technology
Descripción:
SRAM 1.8 or 1.5V 4M x 36 144M
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
GS81302TT37E-300 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
GS81302TT37E-300 más información
Atributo del producto
Valor de atributo
Fabricante:
Tecnología GSI
Categoria de producto:
SRAM
RoHS:
N
Tamaño de la memoria:
72 Mbit
Organización:
4 M x 18
Tiempo de acceso:
8.5 ns
Frecuencia máxima de reloj:
133 MHz
Tipo de interfaz:
Parallel
Voltaje de suministro - Máx:
2.7 V
Voltaje de suministro - Min:
1.7 V
Corriente de suministro - Máx .:
210 mA, 250 mA
Temperatura mínima de funcionamiento:
0 C
Temperatura máxima de funcionamiento:
+ 70 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
BGA-165
Embalaje:
Bandeja
Tipo de memoria:
SDR
Serie:
GS8644Z18E
Escribe:
NBT MCM
Marca:
Tecnología GSI
Sensible a la humedad:
Yes
Tipo de producto:
SRAM
Cantidad de paquete de fábrica:
15
Subcategoría:
Memoria y almacenamiento de datos
Nombre comercial:
NBT SRAM
Tags
GS81302TT37E-3, GS81302TT37E, GS81302TT37, GS81302TT3, GS81302TT, GS81302T, GS81302, GS8130, GS813, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Single 1.8V 144M-Bit 4M x 36 0.45ns 165-Pin FBGA
DDR SRAMs
GSI Technology SigmaDDR™ SRAMs are synchronous memories with a common read and write data bus that combine capacity and performance with transaction rates unequaled by competitors. SigmaDDR SRAMs "DDR" refers to their ability to transfer 2 beats of data on the data bus in a single clock cycle. SigmaDDR memories are ideal for applications that alternate between read and write operations infrequently, at operating speeds of 250 MHz and above. GSI’s SigmaDDR devices are compatible with all competitor Double Data Rate SRAMs.
Imagen Parte # Descripción
GS81302TT38E-500I

Mfr.#: GS81302TT38E-500I

OMO.#: OMO-GS81302TT38E-500I

 SRAM 1.8 or 1.5V 4M x 36 144M
GS81302T18E-250

Mfr.#: GS81302T18E-250

OMO.#: OMO-GS81302T18E-250

 SRAM 1.8 or 1.5V 8M x 18 144M
GS81302T09E-250

Mfr.#: GS81302T09E-250

OMO.#: OMO-GS81302T09E-250

 SRAM 1.8 or 1.5V 16M x 9 144M
GS81302T20GE-350

Mfr.#: GS81302T20GE-350

OMO.#: OMO-GS81302T20GE-350

 SRAM 1.8 or 1.5V 8M x 18 144M
GS81302TT19GE-350

Mfr.#: GS81302TT19GE-350

OMO.#: OMO-GS81302TT19GE-350

 SRAM 1.8 or 1.5V 8M x 18 144M
GS81302T20E-350I

Mfr.#: GS81302T20E-350I

OMO.#: OMO-GS81302T20E-350I

 SRAM 1.8 or 1.5V 8M x 18 144M
GS81302TT37GE-333I

Mfr.#: GS81302TT37GE-333I

OMO.#: OMO-GS81302TT37GE-333I

 SRAM 1.8 or 1.5V 4M x 36 144M
GS81302T37GE-350I

Mfr.#: GS81302T37GE-350I

OMO.#: OMO-GS81302T37GE-350I

 SRAM 1.8 or 1.5V 4M x 36 144M
GS81302TT11GE-450I

Mfr.#: GS81302TT11GE-450I

OMO.#: OMO-GS81302TT11GE-450I

 SRAM 1.8 or 1.5V 16M x 9 144M
GS81302T08E-333

Mfr.#: GS81302T08E-333

OMO.#: OMO-GS81302T08E-333

 SRAM 1.8 or 1.5V 16M x 8 144M
Disponibilidad
Valores:
Available
En orden:
4500
Ingrese la cantidad:
El precio actual de GS81302TT37E-300 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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