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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| BSC152N10NSFGATMA1 DISTI # BSC152N10NSFGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 100V 63A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSC152N10NSFG | Infineon Technologies AG | Power Field-Effect Transistor, 9.4A I(D), 100V, 0.0152ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 18058 |
|
| BSC152N10NSF G DISTI # 726-BSC152N10NSFG | Infineon Technologies AG | MOSFET N-Ch 100V 9.4A TDSON-8 RoHS: Compliant | 0 |
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: BSC152N10NSF G OMO.#: OMO-BSC152N10NSF-G-1190 |
MOSFET N-Ch 100V 9.4A TDSON-8 |
|
|
Mfr.#: BSC152N10NSFG OMO.#: OMO-BSC152N10NSFG-1190 |
Power Field-Effect Transistor, 9.4A I(D), 100V, 0.0152ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
Mfr.#: BSC152N10NSFGATMA1 |
MOSFET N-CH 100V 63A TDSON-8 |