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IPS1021RPBF

IPS1021RPBF
Mfr. #:
IPS1021RPBF
Fabricante:
Infineon Technologies AG
Descripción:
INTELLIGENT POWER SWITCH 1 CHANNEL LOW SIDE DRIVER IN A D-PAK PACKAGE
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPS1021RPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
IPS1021R, IPS1021, IPS102, IPS10, IPS1, IPS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
Intelligent Power Switch 1 Channel Low Side Driver in a D-Pak Package
***p One Stop Global
Power Switch Lo Side 4.3A Automotive 3-Pin(2+Tab) DPAK
***ical
INTELLIGENT POWER LOW SIDE Limit Switch
***i-Key
IC SWITCH IPS 1CH LOW SIDE DPAK
***ment14 APAC
IC, MOSFET, IPS, D-PAK; Power Load Switch Type:Single Low Side; Input Voltage:5.5V; On State Resistance:0.02ohm; Thermal Protection:Yes; Power Dissipation Pd:2.5W; No. of Outputs:1; Internal Switch:Yes; Distribution Switch Case Style:TO-263; No. of Pins:3; Operating Temperature Range:-40°C to +150°C; SVHC:No SVHC (20-Jun-2011); Base Number:1021; Clamping Voltage:36V; Continuous Drain Current Id:6A; Current Id Max:4.3A; Drain Source Voltage Vds:36V; Input High Voltage Min:0.3V; Input Low Voltage Max:6V; On Resistance Rds(on):0.025ohm; Package / Case:DPAK; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Rds(on) Test Voltage Vgs:5V; Shutdown Current:35A; Termination Type:SMD; Threshold Voltage Vgs Typ:1.7V; Transistor Case Style:D-PAK; Transistor Polarity:N Channel; Transistor Type:MOSFET; Voltage Vds Typ:28V; Voltage Vgs Rds on Measurement:5V
***emi
N-Channel Power MOSFET, QFET®, 250 V, 7.4 A, 420 mΩ, DPAK
***r Electronics
Power Field-Effect Transistor, 7.4A I(D), 250V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB
***ark
MOSFET, N-CH, 250V, 7.4A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:7.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***et
TRANS MOSFET N-CH 200V 7A 3PIN DPAK
***ser
MOSFETs 200V N-Channel QFET
***i-Key
MOSFET N-CH 250V 6.2A DPAK
***ser
MOSFETs 250V N-Channel QFET
***el Nordic
Contact for details
***hard Electronics
DIODES INC. ZXMN10A25KTC MOSFET Transistor, N Channel, 6.4 A, 100 V, 125 mohm, 10 V, 4 V
***ure Electronics
N-Channel 100 V 0.125 Ohm Power MOSFET Surface Mount -TO-252-3
***ment14 APAC
MOSFET, N, 100V, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:6.4A; Drain Source Voltage Vds:100V; On Resistance Rds(on):125mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:9.85W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; Current Id Max:6.4A; Package / Case:DPAK; Power Dissipation Pd:9.85W; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***emi
N-Channel Power MOSFET, QFET®, 150 V, 4.3 A, 800 mΩ, DPAK
***ure Electronics
FQD5N15 Series 150 V 4.3 A 800 mOhm N-Channel QFET® MOSFET - TO-252-3
***r Electronics
Power Field-Effect Transistor, 4.3A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***i-Key
MOSFET N-CH 300V 4.4A DPAK
***ser
MOSFETs 300V N-Channel QFET
***el Nordic
Contact for details
Parte # Mfg. Descripción Valores Precio
AUXHA1021RTRL
DISTI # AUXHA1021RTRL-ND		Infineon Technologies AGIC SWITCH IPS 1CH LOW SIDE DPAK
RoHS: Compliant
Min Qty: 225
Container: Tube		Limited Supply - Call
    IPS1021RPBF
    DISTI # 70018047    		Infineon Technologies AGINTELLIGENT POWER SWITCH 1 CHANNEL LOW SIDE DRIVER IN A D-PAK PACKAGE
    RoHS: Compliant    		0
    • 1:$2.0700
    IPS1021RPBF
    DISTI # 942-IPS1021RPBF    		Infineon Technologies AGPower Switch ICs - Power Distribution 40V 50A OTHER
    RoHS: Compliant    		0
      IPS1021RPBF
      DISTI # 1388578      		Infineon Technologies AGIC, MOSFET, IPS, D-PAK
      RoHS: Compliant      		0
      • 1000:$3.4600
      • 500:$3.6200
      • 250:$3.9500
      • 100:$4.2000
      • 10:$5.1400
      • 1:$6.5000
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      Disponibilidad
      Valores:
      Available
      En orden:
      5000
      Ingrese la cantidad:
      El precio actual de IPS1021RPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      3,10 US$
      3,10 US$
      10
      2,95 US$
      29,50 US$
      100
      2,79 US$
      279,45 US$
      500
      2,64 US$
      1 319,65 US$
      1000
      2,48 US$
      2 484,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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