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FZ800R33KF2C

FZ800R33KF2C
Mfr. #:
FZ800R33KF2C
Fabricante:
Infineon Technologies
Descripción:
IGBT Modules 3300V 800A SINGLE
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FZ800R33KF2C Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Módulos IGBT
RoHS:
N
Producto:
Módulos de silicio IGBT
Configuración:
Único
Voltaje colector-emisor VCEO Max:
3300 V
Voltaje de saturación colector-emisor:
3.4 V
Corriente continua del colector a 25 C:
1300 A
Corriente de fuga puerta-emisor:
400 nA
Pd - Disipación de energía:
9.6 kW
Paquete / Caja:
IHM
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 125 C
Embalaje:
Bandeja
Altura:
38 mm
Longitud:
140 mm
Ancho:
130 mm
Marca:
Infineon Technologies
Estilo de montaje:
Montaje en chasis
Voltaje máximo del emisor de puerta:
20 V
Tipo de producto:
Módulos IGBT
Cantidad de paquete de fábrica:
2
Subcategoría:
IGBT
Parte # Alias:
FZ800R33KF2CNOSA1 SP000100609
Tags
FZ800R33KF2C, FZ800R33KF2, FZ800R33KF, FZ800R3, FZ800R, FZ800, FZ80, FZ8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***roFlash
Trans IGBT Module N-CH 3.3KV 1300A 7-pin IHV130-3
***ineon SCT
IHV A 3300 V, 800 A 130 mm single-switch IGBT Module with IGBT2 and Emitter Controlled diode - The experienced solution for traction and industry applications, A-IHV130-3
***ineon
3300V IHV 130mm single switch IGBT Module with IGBT2 - The best solution for your traction and industry applications | Summary of Features: High reliability and robust module construction | Benefits: High power density for compact inverter designs; Standardized housing | Target Applications: drives; wind; traction; cav
***ical
Trans IGBT Module N-CH 1700V 404A 1450000mW 7-Pin 62MM-1 Tray
***ark
Igbt, Module, N-Ch, 1.7Kv, 404A; Transistor Polarity:N Channel; Dc Collector Current:404A; Collector Emitter Saturation Voltage Vce(On):2V; Power Dissipation Pd:1.45Kw; Collector Emitter Voltage V(Br)Ceo:1.7Kv; Transistor Case Rohs Compliant: Yes |Infineon FF300R17KE3HOSA1
***ineon
Our well-known 62 mm 1700V dual IGBT modules are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 150 C; Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: PrimeSTACKs available for fast development with minimum effort; Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; wind; solar; traction
***p One Stop
Trans IGBT Module N-CH 1200V 700A 3900000mW 5-Pin 62MM-2 Tray
***nell
TRANSISTOR, IGBT MODULE, 1.2KV, 700A; Transistor Polarity: N Channel; DC Collector Current: 700A; Collector Emitter Saturation Voltage Vce(on): 3.2V; Power Dissipation Pd: 3.9kW; Collector Emitter Voltage V(br)ceo: 1.2kV; Tra
***ark
Transistor, Igbt Module, 1.2Kv, 700A; Continuous Collector Current:700A; Collector Emitter Saturation Voltage:3.2V; Power Dissipation:3.9Kw; Operating Temperature Max:125°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Infineon FZ600R12KS4HOSA1
***ineon
Our well-known 62 mm 1200V single switch IGBT modules with IGBT2 Fast for high-frequency switching are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 150 C; Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding
***ical
Trans IGBT Module N-CH 1200V 72A 350000mW 17-Pin EconoPACK 2A
***et
Transistor IGBT Module N-CH 1200V 72A 20V Screw Mount Tray
***el Electronic
INFINEON BSM50GD120DN2 IGBT Array & Module Transistor, N Channel, 72 A, 3 V, 350 W, 1.2 kV, EconoPACK
***nsix Microsemi
Insulated Gate Bipolar Transistor, 72A I(C), 1200V V(BR)CES, N-Channel
***ment14 APAC
IGBT MODULE, 1200V, ECONOPACK3; Module Configuration:Six; DC Collector Current:72A; Collector Emitter Voltage Vces:3V; Power Dissipation Pd:350W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +125°C; Transistor Case Style:Econopack 3; No. of Pins:17; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:50A; Current Temperature:80°C; Full Power Rating Temperature:25°C; No. of Transistors:6; Package / Case:Econopack 3; Power Dissipation Max:350W; Power Dissipation Pd:350W; Power Dissipation Pd:350W; Pulsed Current Icm:100A; Termination Type:Solder; Voltage Vce Sat Typ:2.5V; Voltage Vces:1.2kV
Parte # Mfg. Descripción Valores Precio
FZ800R33KF2CNOSA1
DISTI # FZ800R33KF2CNOSA1-ND		Infineon Technologies AGMODULE IGBT A-IHV130-3
RoHS: Not compliant
Min Qty: 2
Container: Tray		Temporarily Out of Stock
  • 2:$1,421.1300
FZ800R33KF2CNOSA1
DISTI # FZ800R33KF2CNOSA1		Infineon Technologies AGTRACTION - Trays (Alt: FZ800R33KF2CNOSA1)
RoHS: Not Compliant
Min Qty: 2
Container: Tray		Americas - 0
  • 2:$1,462.0000
  • 4:$1,409.0000
  • 8:$1,358.0000
  • 12:$1,313.0000
  • 20:$1,289.0000
1SP0635S2M1-FZ800R33KF2C
DISTI # 1SP0635SF8R332C		Power IntegrationsPLUG-AND-PLAY IGBT DRIVER
RoHS: Compliant		0
    1SP0635D2S1-FZ800R33KF2C
    DISTI # 1SP0635DF833F2C    		Power IntegrationsPLUG-AND-PLAY IGBT DRIVER
    RoHS: Compliant    		0
      1SP0635V2M1-FZ800R33KF2C
      DISTI # 1SP0635VF8R332C      		Power IntegrationsPLUG-AND-PLAY IGBT DRIVER
      RoHS: Compliant      		0
        Imagen Parte # Descripción
        FZ800R33KF2C

        Mfr.#: FZ800R33KF2C

        OMO.#: OMO-FZ800R33KF2C-125

        		 IGBT Modules 3300V 800A SINGLE
        FZ800R12KS4_B2

        Mfr.#: FZ800R12KS4_B2

        OMO.#: OMO-FZ800R12KS4-B2-125

        		 IGBT Modules N-CH 1.2KV 1.2KA
        FZ800R12KF4S1

        Mfr.#: FZ800R12KF4S1

        OMO.#: OMO-FZ800R12KF4S1-1190

        		 Nuevo y original
        FZ800R12KS4

        Mfr.#: FZ800R12KS4

        OMO.#: OMO-FZ800R12KS4-1190

        		 Nuevo y original
        FZ800R17KE4

        Mfr.#: FZ800R17KE4

        OMO.#: OMO-FZ800R17KE4-1190

        		 Nuevo y original
        FZ800R17KF

        Mfr.#: FZ800R17KF

        OMO.#: OMO-FZ800R17KF-1190

        		 Nuevo y original
        FZ800R17KF4

        Mfr.#: FZ800R17KF4

        OMO.#: OMO-FZ800R17KF4-1190

        		 Nuevo y original
        FZ800R17KF6C-B2

        Mfr.#: FZ800R17KF6C-B2

        OMO.#: OMO-FZ800R17KF6C-B2-1190

        		 IGBT Modules 1700V 800A SINGLE
        FZ800R33KF2

        Mfr.#: FZ800R33KF2

        OMO.#: OMO-FZ800R33KF2-1190

        		 Nuevo y original
        FZ800R45KL3B5NOSA2

        Mfr.#: FZ800R45KL3B5NOSA2

        OMO.#: OMO-FZ800R45KL3B5NOSA2-INFINEON-TECHNOLOGIES

        		 MODULE IGBT A-IHV130-4
        Disponibilidad
        Valores:
        Available
        En orden:
        5000
        Ingrese la cantidad:
        El precio actual de FZ800R33KF2C es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        1 268,87 US$
        1 268,87 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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