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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| IPD127N06LGBTMA1 DISTI # V72:2272_06384275 | Infineon Technologies AG | Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant | 213 |
|
| IPD127N06LGBTMA1 DISTI # V36:1790_06384275 | Infineon Technologies AG | Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant | 0 |
|
| IPD127N06LGBTMA1 DISTI # IPD127N06LGBTMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 60V 50A TO-252 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call |
|
| IPD127N06LGBTMA1 DISTI # IPD127N06LGBTMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 60V 50A TO-252 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| IPD127N06LGBTMA1 DISTI # IPD127N06LGBTMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 60V 50A TO-252 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| IPD127N06L G DISTI # IPD127N06L G | Infineon Technologies AG | Trans MOSFET N-CH 60V 50A 3-Pin TO-252 T/R (Alt: IPD127N06L G) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Asia - 0 |
|
| IPD127N06L G DISTI # SP000443740 | Infineon Technologies AG | Trans MOSFET N-CH 60V 50A 3-Pin TO-252 T/R (Alt: SP000443740) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Europe - 0 |
|
| IPD127N06LGXT DISTI # IPD127N06LGBTMA1 | Infineon Technologies AG | Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD127N06LGBTMA1) RoHS: Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
| IPD127N06LGBTMA1 DISTI # SP000443740 | Infineon Technologies AG | Trans MOSFET N-CH 60V 50A 3-Pin TO-252 T/R (Alt: SP000443740) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Europe - 0 |
|
| IPD127N06LGBTMA1 DISTI # N/A | Infineon Technologies AG | MOSFET MV POWER MOS | 0 | |
| IPD127N06L G DISTI # 726-IPD127N06LG | Infineon Technologies AG | MOSFET N-Ch 60V 50A DPAK-2 RoHS: Compliant | 13080 |
|
| IPD127N06L G | Infineon Technologies AG | 5000 | ||
| IPD127N06LG | Infineon Technologies AG | POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 60V, 0.0127OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA | 840 |
|
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: IPD122N10N3GATMA1 OMO.#: OMO-IPD122N10N3GATMA1 |
MOSFET |
|
|
Mfr.#: IPD127N06LGBTMA1 OMO.#: OMO-IPD127N06LGBTMA1 |
MOSFET MV POWER MOS |
|
Mfr.#: IPD122N10N3GATMA1 |
MOSFET N-CH 100V 59A |
|
|
Mfr.#: IPD12N03LB G |
MOSFET N-CH 30V 30A TO-252 |
|
Mfr.#: IPD122N10N3G OMO.#: OMO-IPD122N10N3G-1190 |
100V,59A,N Channel Power MOSFET |
|
|
Mfr.#: IPD122N10N3GB OMO.#: OMO-IPD122N10N3GB-1190 |
Nuevo y original |
|
|
Mfr.#: IPD127N06LGBTMA1 |
MOSFET N-CH 60V 50A TO-252 |
|
|
Mfr.#: IPD12CN10NGATMA1 |
MOSFET N-CH 100V 67A TO252-3 |
|
|
Mfr.#: IPD12CNE8NG OMO.#: OMO-IPD12CNE8NG-1190 |
Nuevo y original |
|
|
Mfr.#: IPD12N03LB OMO.#: OMO-IPD12N03LB-1190 |
Nuevo y original |