SBC846BPDW1T2G

SBC846BPDW1T2G
Mfr. #:
SBC846BPDW1T2G
Fabricante:
ON Semiconductor
Descripción:
Bipolar Transistors - BJT SS SC88 DUAL GEN XSTR
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SBC846BPDW1T2G Ficha de datos
Entrega:
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HTML Datasheet:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores bipolares - BJT
RoHS:
Y
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOT-363-6
Polaridad del transistor:
NPN, PNP
Configuración:
Doble
Voltaje colector-emisor VCEO Max:
65 V
Colector- Voltaje base VCBO:
80 V
Emisor- Voltaje base VEBO:
6 V
Voltaje de saturación colector-emisor:
- 300 mV, 250 mV
Corriente máxima del colector de CC:
200 mA
Producto de ganancia de ancho de banda fT:
100 MHz
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
BC846BPDW1
Ganancia de corriente CC hFE Max:
475
Embalaje:
Carrete
Marca:
EN Semiconductor
Colector de CC / Ganancia base hfe Min:
200
Pd - Disipación de energía:
250 mW
Tipo de producto:
BJT - Transistores bipolares
Calificación:
AEC-Q101
Cantidad de paquete de fábrica:
3000
Subcategoría:
Transistores
Unidad de peso:
0.000265 oz
Tags
SBC846BPDW1, SBC846BP, SBC846B, SBC846, SBC84, SBC8, SBC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***nsix Microsemi
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, NPN and PNP, Silicon
***ical
Trans GP BJT NPN/PNP 65V 0.1A 380mW Automotive 6-Pin SC-88 T/R
***emi
NPN PNP Bipolar Transistor
***el Electronic
Bipolar Transistors - BJT PNP Transistor General Purpose
***Yang
Trans GP BJT PNP 65V 0.1A 6-Pin SC-88 T/R - Product that comes on tape, but is not reeled
***roFlash
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, PNP, Silicon
***ure Electronics
Dual PNP 65 V 100 mA SMT General Purpose Transistor - SOT-363
*** Source Electronics
Trans GP BJT PNP 65V 0.2A 380mW 6-Pin SC-88 T/R / TRANS 2PNP 65V 0.1A SOT363
***(Formerly Allied Electronics)
ON Semi BC856BDW1T1G Dual PNP Bipolar Transistor, 0.1 A, 65 V, 6-Pin SC-88 | ON Semiconductor BC856BDW1T1G
***ment14 APAC
Transistor, PNP, -65V, -100MA, SOT-363-6; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:65V; Power Dissipation Pd:380mW; DC
***th Star Micro
These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications.
***nell
TRANSISTOR, PNP, -65V, -100MA, SOT-363-6; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 65V; Power Dissipation Pd: 380mW; DC Collector Current: 100mA; DC Current Gain hFE: 290hFE; Transistor Case Style: SOT-363; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C; Transition Frequency ft: 100MHz
***trelec
Transistor Polarity = PNP / Configuration = Dual / Continuous Collector Current (Ic) mA = 100 / Collector-Emitter Voltage (Vceo) V = 65 / DC Current Gain (hFE) = 150 / Collector-Base Voltage (Vcbo) V = 80 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 380 / Package Type = SOT-363 / Pins = 6 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 650 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 900 / Reflow Temperature Max. °C = 260
***(Formerly Allied Electronics)
ON Semi BC846BDW1T1G Dual NPN Bipolar Transistor; 0.1 A; 65 V; 6-Pin SC-88
***Yang
Trans GP BJT NPN 65V 0.1A 6-Pin SC-88 T/R - Product that comes on tape, but is not reeled
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, NPN, Silicon
***p One Stop Global
Trans GP BJT NPN 65V 0.1A 380mW Automotive 6-Pin SC-88 T/R
***ure Electronics
BC846BDW1 Series Dual NPN 65 V 100 mA SMT General Purpose Transistor - SOT-363
***th Star Micro
These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications.
***ark
BIPOLAR TRANSISTOR, NPN, DUAL, 65V, SOT363, FULL REEL; Transistor Polarity:Dual NPN; Collector Emitter Voltage Max NPN:65V; Collector Emitter Voltage Max PNP:-; Continuous Collector Current NPN:100mA; Power Dissipation NPN:380mW RoHS Compliant: Yes
***ca Corp
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, NPN and PNP, Silicon
***p One Stop Global
Trans GP BJT NPN/PNP 65V 0.1A 380mW Automotive 6-Pin SOT-363 T/R
***ure Electronics
BC846 Series 65 V 100 mA SMT NPN/PNP Complementary Transistor - SOT-363
***ponent Stockers USA
100 mA 65 V 2 CHANNEL NPN AND PNP Si SMALL SIGNAL TRANSISTOR
***(Formerly Allied Electronics)
IC,Transitor;NPN;65V;100mA;SOT-363;Cut Tape | ON Semiconductor BC846BPDW1T1G
***Yang
Bipolar Transistors - BJT 100mA 80V Dual Complementary
***ment14 APAC
Transistor, BIPOL, NPN/PNP, 65V, SOT363; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:65V; Power Dissipation Pd:380mW; DC
***el Electronic
Transistors - Bipolar (BJT) - Arrays 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) 1 (Unlimited) Surface Mount NPN, PNP -55°C~150°C TJ 600mV @ 5mA, 100mA 200 @ 2mA 5V 15nA ICBO TRANS NPN/PNP 65V 0.1A SOT363
***th Star Micro
These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications.
***ark
TRANSISTOR NPN/PNP DUAL 65V SOT-363, FULL REEL; Transistor Polarity:NPN, PNP; Collector Emitter Voltage Max NPN:65V; Collector Emitter Voltage Max PNP:65V; Continuous Collector Current NPN:100mA; Power Dissipation NPN:380mW RoHS Compliant: Yes
***nell
TRANSISTOR, BIPOL, NPN/PNP, 65V, SOT363; Transistor Polarity: NPN, PNP; Collector Emitter Voltage V(br)ceo: 65V; Power Dissipation Pd: 380mW; DC Collector Current: 100mA; DC Current Gain hFE: 200hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Parte # Mfg. Descripción Valores Precio
SBC846BPDW1T2G
DISTI # SBC846BPDW1T2GOSCT-ND
ON SemiconductorTRANS NPN/PNP 65V 0.1A SOT363
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1151In Stock
  • 1000:$0.0958
  • 500:$0.1249
  • 100:$0.1886
  • 10:$0.3330
  • 1:$0.4500
SBC846BPDW1T2G
DISTI # SBC846BPDW1T2GOSDKR-ND
ON SemiconductorTRANS NPN/PNP 65V 0.1A SOT363
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1151In Stock
  • 1000:$0.0958
  • 500:$0.1249
  • 100:$0.1886
  • 10:$0.3330
  • 1:$0.4500
SBC846BPDW1T2G
DISTI # SBC846BPDW1T2GOSTR-ND
ON SemiconductorTRANS NPN/PNP 65V 0.1A SOT363
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 75000:$0.0539
  • 30000:$0.0606
  • 15000:$0.0647
  • 6000:$0.0728
  • 3000:$0.0809
SBC846BPDW1T2G/H
DISTI # SBC846BPDW1T2G
ON SemiconductorTrans GP BJT NPN/PNP 65V 0.1A 6-Pin SOT-363 T/R - Tape and Reel (Alt: SBC846BPDW1T2G)
RoHS: Compliant
Min Qty: 30000
Container: Reel
Americas - 0
  • 30000:$0.0503
  • 36000:$0.0500
  • 66000:$0.0494
  • 150000:$0.0487
  • 300000:$0.0475
SBC846BPDW1T2G
DISTI # 76T7153
ON SemiconductorSS SC88 DUAL GEN XSTR / REEL0
  • 1:$0.4840
  • 50:$0.2740
  • 100:$0.1200
  • 250:$0.1160
  • 500:$0.1130
  • 1000:$0.0740
  • 9000:$0.0620
  • 27000:$0.0600
SBC846BPDW1T1G
DISTI # 863-SBC846BPDW1T1G
ON SemiconductorBipolar Transistors - BJT SS SC88 DUAL GEN XSTR
RoHS: Compliant
170
  • 1:$0.4300
  • 10:$0.2780
  • 100:$0.1190
  • 1000:$0.0920
  • 3000:$0.0700
  • 9000:$0.0620
SBC846BPDW1T2G
DISTI # 863-SBC846BPDW1T2G
ON SemiconductorBipolar Transistors - BJT SS SC88 DUAL GEN XSTR
RoHS: Compliant
0
  • 1:$0.4300
  • 10:$0.2780
  • 100:$0.1190
  • 1000:$0.0920
  • 3000:$0.0700
  • 9000:$0.0620
  • 24000:$0.0580
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Aluminum Electrolytic Capacitors - Screw Terminal 100V 3300uF 20% 11000Hrs
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Mfr.#: CRD-5FF0912P

OMO.#: OMO-CRD-5FF0912P

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Disponibilidad
Valores:
Available
En orden:
1991
Ingrese la cantidad:
El precio actual de SBC846BPDW1T2G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,43 US$
0,43 US$
10
0,28 US$
2,78 US$
100
0,12 US$
11,90 US$
1000
0,09 US$
92,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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