NTGD1100LT1G

NTGD1100LT1G
Mfr. #:
NTGD1100LT1G
Fabricante:
ON Semiconductor
Descripción:
MOSFET 8V +/-3.3A P-Channel w/Level Shift
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NTGD1100LT1G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NTGD1100LT1G DatasheetNTGD1100LT1G Datasheet (P4-P5)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TSOP-6
Número de canales:
2 Channel
Polaridad del transistor:
Canal N, canal P
Vds - Voltaje de ruptura de drenaje-fuente:
8 V
Id - Corriente de drenaje continua:
3.3 A
Rds On - Resistencia de la fuente de drenaje:
55 mOhms
Vgs th - Voltaje umbral puerta-fuente:
600 mV
Vgs - Voltaje puerta-fuente:
4.5 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
830 mW
Configuración:
Doble
Modo de canal:
Mejora
Embalaje:
Carrete
Altura:
0.94 mm
Longitud:
3 mm
Serie:
NTGD1100L
Tipo de transistor:
1 N-Channel, 1 P-Channel
Escribe:
MOSFET
Ancho:
1.5 mm
Marca:
EN Semiconductor
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Unidad de peso:
0.000705 oz
Tags
NTGD1, NTGD, NTG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    A***N
    A***N
    TR

    very good

    2019-03-05
    P***l
    P***l
    NL

    Good

    2019-06-14
    M***n
    M***n
    EE

    The power input is a little bit misaligned, but otherwise works great!

    2019-03-11
    S***o
    S***o
    RU

    Norms

    2019-05-29
***(Formerly Allied Electronics)
NTGD1100LT1G Dual N/P-channel MOSFET Transistor; 3.3 A; 8 V; 6-Pin TSOP
***ure Electronics
P-Channel 8 V 40 mOhm 0.83 W Surface Mount Power MOSFET - TSOP-6
***emi
Dual P-Channel Small Signal MOSFET with Level-Shift -8V, -3.3A, 55mΩ Small Signal MOSFET 8V 3.3 A 55 mOhm Dual P-Channel TSOP6 with Level-Shift
*** Stop Electro
Small Signal Field-Effect Transistor, 3.3A I(D), 8V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
Transistor Polarity:complementary N And P Channel; Drain Source Voltage Vds:8V; Continuous Drain Current Id:-; On Resistance Rds(On):0.04Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; No. Of Pins:6Pins Rohs Compliant: Yes
***(Formerly Allied Electronics)
SI1050X-T1-GE3 N-channel MOSFET Transistor; 1.34 A; 8 V; 6-Pin SC-89
***et
Trans MOSFET N-CH 8V 1.34A 6-Pin SC-89 T/R
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:8V; Continuous Drain Current Id:1.34A; On Resistance Rds(On):0.12Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:1.5V; Threshold Voltage Vgs:350Mv Rohs Compliant: No
***ark
MOSFET, P CH, ESD, 8V, 9A, PPK SC75; Transistor Polarity:P Channel; Continuous D
*** Source Electronics
Trans MOSFET P-CH 8V 9A 6-Pin PowerPAK SC-75 T/R / MOSFET P-CH 8V 9A SC-75-6
***nell
MOSFET, P CH, ESD, 8V, 9A, PPK SC75; Transistor Polarity:P Channel; Continuous Drain Current Id:-9A; Drain Source Voltage Vds:-8V; On Resistance Rds(on):0.028ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:13W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SC-75; No. of Pins:6; MSL:-; Operating Temperature Range:-55°C to +150°C
***ure Electronics
N Channel 8 V 0.041 O 19 W 32 nC Surface Mount Power MosFet - PPAK-SC-70-6
*** Source Electronics
Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R / MOSFET N-CH 8V 12A SC70-6
***ment14 APAC
MOSFET,N CH,8V,12A,SC70-6; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:8V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:3.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SC-70; No. of Pins:6; Current Id Max:12A; Power Dissipation Pd:3.5W; Voltage Vgs Max:5V
Parte # Mfg. Descripción Valores Precio
NTGD1100LT1G
DISTI # V72:2272_07304737
ON SemiconductorTrans MOSFET N/P-CH 8V 6-Pin TSOP T/R
RoHS: Compliant
3000
  • 3000:$0.1915
  • 1000:$0.2248
  • 500:$0.2402
  • 250:$0.2668
  • 100:$0.2965
  • 25:$0.4342
  • 10:$0.5306
  • 1:$0.6394
NTGD1100LT1G
DISTI # V36:1790_07304737
ON SemiconductorTrans MOSFET N/P-CH 8V 6-Pin TSOP T/R
RoHS: Compliant
0
  • 3000000:$0.1573
  • 1500000:$0.1575
  • 300000:$0.1767
  • 30000:$0.2096
  • 3000:$0.2150
NTGD1100LT1G
DISTI # NTGD1100LT1GOSCT-ND
ON SemiconductorMOSFET N/P-CH 8V 3.3A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
17825In Stock
  • 1000:$0.2482
  • 500:$0.3212
  • 100:$0.4088
  • 10:$0.5480
  • 1:$0.6400
NTGD1100LT1G
DISTI # NTGD1100LT1GOSDKR-ND
ON SemiconductorMOSFET N/P-CH 8V 3.3A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
17825In Stock
  • 1000:$0.2482
  • 500:$0.3212
  • 100:$0.4088
  • 10:$0.5480
  • 1:$0.6400
NTGD1100LT1G
DISTI # NTGD1100LT1GOSTR-ND
ON SemiconductorMOSFET N/P-CH 8V 3.3A 6-TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
15000In Stock
  • 30000:$0.1814
  • 15000:$0.1914
  • 6000:$0.2055
  • 3000:$0.2197
NTGD1100LT1G
DISTI # 32928161
ON SemiconductorTrans MOSFET N/P-CH 8V 6-Pin TSOP T/R
RoHS: Compliant
3000
  • 38:$0.6394
NTGD1100LT1G
DISTI # NTGD1100LT1G
ON SemiconductorTrans MOSFET N/P-CH 8V 6-Pin TSOP T/R (Alt: NTGD1100LT1G)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 9000
  • 150000:$0.2250
  • 75000:$0.2288
  • 30000:$0.2328
  • 15000:$0.2411
  • 9000:$0.2500
  • 6000:$0.2596
  • 3000:$0.2700
NTGD1100LT1G
DISTI # NTGD1100LT1G
ON SemiconductorTrans MOSFET N/P-CH 8V 6-Pin TSOP T/R - Tape and Reel (Alt: NTGD1100LT1G)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.1659
  • 18000:$0.1699
  • 12000:$0.1729
  • 6000:$0.1749
  • 3000:$0.1759
NTGD1100LT1G
DISTI # NTGD1100LT1G
ON SemiconductorTrans MOSFET N/P-CH 8V 6-Pin TSOP T/R - Bulk (Alt: NTGD1100LT1G)
Min Qty: 1667
Container: Bulk
Americas - 0
  • 16670:$0.1849
  • 8335:$0.1889
  • 5001:$0.1919
  • 3334:$0.1939
  • 1667:$0.1959
NTGD1100LT1G
DISTI # NTGD1100LT1G
ON SemiconductorTrans MOSFET N/P-CH 8V 6-Pin TSOP T/R (Alt: NTGD1100LT1G)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 30000:€0.1709
  • 18000:€0.1839
  • 12000:€0.1989
  • 6000:€0.2169
  • 3000:€0.2659
NTGD1100LT1G
DISTI # 02AC3804
ON SemiconductorMOSFET, N & P-CH, 8V, 3.3A, TSOP,Transistor Polarity:N and P Channel,Continuous Drain Current Id:-,Drain Source Voltage Vds:8V,On Resistance Rds(on):0.04ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1.2V,Power RoHS Compliant: Yes1033
  • 1000:$0.2660
  • 500:$0.2890
  • 250:$0.3110
  • 100:$0.3340
  • 50:$0.3980
  • 25:$0.4620
  • 10:$0.5260
  • 1:$0.6280
NTGD1100LT1G.
DISTI # 29AC9045
ON SemiconductorTransistor Polarity:N and P Channel,Continuous Drain Current Id:-,Drain Source Voltage Vds:8V,On Resistance Rds(on):0.04ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1.2V,Power Dissipation Pd:830mW,No. of Pins:6Pins RoHS Compliant: Yes0
  • 30000:$0.1660
  • 18000:$0.1700
  • 12000:$0.1730
  • 6000:$0.1750
  • 1:$0.1760
NTGD1100LT1G
DISTI # 863-NTGD1100LT1G
ON SemiconductorMOSFET 8V +/-3.3A P-Channel w/Level Shift
RoHS: Compliant
21357
  • 1:$0.5900
  • 10:$0.4880
  • 100:$0.2980
  • 1000:$0.2300
  • 3000:$0.1960
NTGD1100LT1GON SemiconductorSmall Signal Field-Effect Transistor, 3.3A I(D), 8V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
90857
  • 1000:$0.2000
  • 500:$0.2100
  • 100:$0.2200
  • 25:$0.2300
  • 1:$0.2400
NTGD1100LT1GON Semiconductor 2125
    NTGD1100LT1GON Semiconductor8V,3.3A,Load Switch with Level Shift,P Channel,TSOP6 Power MOSFET389
    • 1:$0.3200
    • 100:$0.2500
    • 500:$0.2300
    • 1000:$0.2200
    NTGD1100LT1G
    DISTI # 2630398
    ON SemiconductorMOSFET, N & P-CH, 8V, 3.3A, TSOP
    RoHS: Compliant
    1008
    • 1000:$0.3740
    • 500:$0.4840
    • 100:$0.6170
    • 10:$0.8260
    • 1:$0.9600
    NTGD1100LT1G
    DISTI # 2630398
    ON SemiconductorMOSFET, N & P-CH, 8V, 3.3A, TSOP992
    • 500:£0.1790
    • 250:£0.2050
    • 100:£0.2320
    • 10:£0.4220
    • 1:£0.5260
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    Disponibilidad
    Valores:
    21
    En orden:
    2004
    Ingrese la cantidad:
    El precio actual de NTGD1100LT1G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,59 US$
    0,59 US$
    10
    0,49 US$
    4,88 US$
    100
    0,30 US$
    29,80 US$
    1000
    0,23 US$
    230,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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