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IXFH18N90P

IXFH18N90P
Mfr. #:
IXFH18N90P
Fabricante:
Littelfuse
Descripción:
IGBT Transistors MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFH18N90P Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
IXFH18N90P más información
Atributo del producto
Valor de atributo
Fabricante
IXYS
categoria de producto
FET - Single
Serie
IXFH18N90
embalaje
Tubo
Unidad de peso
0.229281 oz
Estilo de montaje
A través del orificio
Nombre comercial
HyperFET
Paquete-Estuche
TO-247-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
540 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
44 ns
Hora de levantarse
33 ns
Vgs-Puerta-Fuente-Voltaje
30 V
Id-corriente-de-drenaje-continua
18 A
Vds-Drain-Source-Breakdown-Voltage
900 V
Vgs-th-Gate-Source-Threshold-Voltage
3 V to 6 V
Resistencia a la fuente de desagüe de Rds
600 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
60 ns
Tiempo de retardo de encendido típico
40 ns
Qg-Gate-Charge
97 nC
Transconductancia directa-Mín.
10 S
Modo de canal
Mejora
Tags
IXFH18N, IXFH18, IXFH1, IXFH, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 900V 18A 3-Pin(3+Tab) TO-247
***pNet
N CH POLAR PMOS HiPerFET, 900V, 18A, TO-247
***ment14 APAC
MOSFET,N CH,900V,18A,TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:900V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:540W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; Current Id Max:18A; Power Dissipation Pd:540W; Voltage Vgs Max:30V
900V Polar HiPerFET Power MOSFETs
IXYS 900V Polar HiPerFET™ Power MOSFETs are available with drain current ratings from 10.5A to 56A and combine the advantages derived from the IXYS Polar Technology platform and HiPerFET process to provide improved power efficiency and reliability in demanding high-voltage conversion systems that require bus voltage operation of up to 700V. IXYS 900V Polar HiPerFET Power MOSFETs are tailored to minimize on-state resistance while maintaining low gate charge, resulting in a substantial reduction in conduction and switching losses. These IXYS devices feature a fast intrinsic diode for low reverse recovery charge and improved turn-off dV/dt immunity. These high reliability Polar HiPerFET Power MOSFETs are ideal for use in a variety of applications, including switch-mode / resonant-mode power supplies, DC/DC converters, laser drivers, and more.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Parte # Mfg. Descripción Valores Precio
IXFH18N90P
DISTI # V99:2348_15877383		IXYS CorporationTrans MOSFET N-CH 900V 18A 3-Pin(3+Tab) TO-24730
  • 1000:$5.2550
  • 500:$5.5250
  • 250:$6.0450
  • 100:$6.5820
  • 50:$6.7690
  • 25:$7.2560
  • 10:$8.4930
  • 1:$10.2311
IXFH18N90P
DISTI # IXFH18N90P-ND		IXYS CorporationMOSFET N-CH TO-247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$7.6877
IXFH18N90P
DISTI # 25894581		IXYS CorporationTrans MOSFET N-CH 900V 18A 3-Pin(3+Tab) TO-24730
  • 1000:$5.6491
  • 500:$5.9394
  • 250:$6.4984
  • 100:$7.0757
  • 50:$7.2767
  • 25:$7.8002
  • 10:$9.1300
  • 2:$9.9986
IXFH18N90P
DISTI # 747-IXFH18N90P		IXYS CorporationMOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
RoHS: Compliant		440
  • 1:$10.7800
  • 10:$9.7000
  • 25:$8.0700
  • 50:$7.5000
  • 100:$7.3300
  • 250:$6.7000
  • 500:$6.1000
  • 1000:$5.8200
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Disponibilidad
Valores:
Available
En orden:
5500
Ingrese la cantidad:
El precio actual de IXFH18N90P es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
7,88 US$
7,88 US$
10
7,49 US$
74,88 US$
100
7,09 US$
709,43 US$
500
6,70 US$
3 350,05 US$
1000
6,31 US$
6 306,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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