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SMBT3906DW1T1G

SMBT3906DW1T1G
Mfr. #:
SMBT3906DW1T1G
Fabricante:
ON Semiconductor
Descripción:
Bipolar Transistors - BJT SS GP XSTR PNP 40V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SMBT3906DW1T1G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SMBT3906DW1T1G DatasheetSMBT3906DW1T1G Datasheet (P4-P6)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores bipolares - BJT
RoHS:
Y
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOT-363-6
Polaridad del transistor:
PNP
Configuración:
Doble
Voltaje colector-emisor VCEO Max:
- 40 V
Colector- Voltaje base VCBO:
- 40 V
Emisor- Voltaje base VEBO:
- 5 V
Voltaje de saturación colector-emisor:
- 0.25 V
Producto de ganancia de ancho de banda fT:
250 MHz
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
SMBT3906DW1T1G
Ganancia de corriente CC hFE Max:
300
Embalaje:
Carrete
Marca:
EN Semiconductor
Corriente continua del colector:
- 200 mA
Pd - Disipación de energía:
150 mW
Tipo de producto:
BJT - Transistores bipolares
Calificación:
AEC-Q101
Cantidad de paquete de fábrica:
3000
Subcategoría:
Transistores
Unidad de peso:
0.000212 oz
Tags
SMBT3906, SMBT390, SMBT39, SMBT3, SMBT, SMB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ca Corp
Small Signal Bipolar Transistor, 0.2A I(C), PNP
***(Formerly Allied Electronics)
ON Semi SMBT3906DW1T1G Dual PNP Bipolar Transistor, 0.2 A, 40 V, 6-Pin SOT-363 | ON Semiconductor SMBT3906DW1T1G
***ow.cn
Trans GP BJT PNP 40V 0.2A 150mW Automotive 6-Pin SC-88 T/R
***ca Corp
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon
***p One Stop
Trans GP BJT PNP 40V 0.2A 150mW Automotive 6-Pin SOT-363 T/R
***ure Electronics
MBT Series 40 V 200 mA SMT PNP Silicon Dual General Purpose Transistor - SOT-363
***(Formerly Allied Electronics)
Transistor, dual PNP, 40V, 200MA, 150mW, -55 to 150C, 833C/W, SOT363 | ON Semiconductor MBT3906DW1T1G
***ponent Stockers USA
200 mA 40 V 2 CHANNEL PNP Si SMALL SIGNAL TRANSISTOR
***nell
BIPOLAR TRANSISTOR, PNP, -40V, FULL REEL; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -40V; Power Dissipation Pd: 150mW; DC Collector Current: -200mA; DC Current Gain hFE: 60hFE; Transistor Case Style: SOT-36
***enic
40V 150mW 200mA 100@10mA1V 250MHz 400mV@50mA5mA 2PCSPNP -55¡Í~+150¡Í@(Tj) SC-70-6(SOT-363) Bipolar Transistors - BJT ROHS
***th Star Micro
The MBT3906DW1T1 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package this device is ideal for low-power surface mount applications where board space is at a premium.
***ical
Trans GP BJT PNP 40V 0.2A 150mW 6-Pin SOT-363 T/R
***r Electronics
Small Signal Bipolar Transistor, 0.2A I(C), PNP
***ark
Reel / Ss Sc88 Gp Xstr Pnp 40V
***r Electronics
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon
***et
TRANS GP BJT PNP 40V 0.2A 6PIN SC-88
***nell
MBT3906DW1T1, SINGLE BIPOLAR TRANSISTORS;
***el Electronic
Trans Digital BJT NPN/PNP 50V 100mA 300mW Automotive 6-Pin SOT-363 T/R
***des Inc SCT
NPN/PNP, 50V, 0.5A/0.1A, SOT26, 300mW
***or
TRANS NPN/PNP PREBIAS 0.3W SC74R
Parte # Mfg. Descripción Valores Precio
SMBT3906DW1T1G
DISTI # SMBT3906DW1T1GOSCT-ND		ON SemiconductorTRANS 2PNP 40V 0.2A SC88
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		935In Stock
  • 1000:$0.1240
  • 500:$0.1653
  • 100:$0.2204
  • 10:$0.3240
  • 1:$0.4000
SMBT3906DW1T1G
DISTI # SMBT3906DW1T1GOSDKR-ND		ON SemiconductorTRANS 2PNP 40V 0.2A SC88
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		935In Stock
  • 1000:$0.1240
  • 500:$0.1653
  • 100:$0.2204
  • 10:$0.3240
  • 1:$0.4000
SMBT3906DW1T1G
DISTI # SMBT3906DW1T1GOSTR-ND		ON SemiconductorTRANS 2PNP 40V 0.2A SC88
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 30000:$0.0892
  • 15000:$0.0970
  • 6000:$0.1037
  • 3000:$0.1104
SMBT3906DW1T1G
DISTI # SMBT3906DW1T1G		ON SemiconductorTrans GP BJT PNP 40V 0.2A 6-Pin SC-88 T/R - Tape and Reel (Alt: SMBT3906DW1T1G)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.0829
  • 6000:$0.0819
  • 12000:$0.0809
  • 18000:$0.0799
  • 30000:$0.0779
SMBT3906DW1T1G
DISTI # 70600132		ON SemiconductorON Semi SMBT3906DW1T1G Dual PNP BipolarTransistor,0.2 A,40 V,6-Pin SOT-363
RoHS: Compliant		0
  • 100:$0.0880
  • 500:$0.0840
  • 1000:$0.0810
SMBT3906DW1T1G
DISTI # 863-SMBT3906DW1T1G		ON SemiconductorBipolar Transistors - BJT SS GP XSTR PNP 40V
RoHS: Compliant		253
  • 1:$0.3800
  • 10:$0.2830
  • 100:$0.1530
  • 1000:$0.1150
  • 3000:$0.0990
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Disponibilidad
Valores:
Available
En orden:
1987
Ingrese la cantidad:
El precio actual de SMBT3906DW1T1G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,38 US$
0,38 US$
10
0,28 US$
2,83 US$
100
0,15 US$
15,30 US$
1000
0,12 US$
115,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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