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SIA921EDJ-T1-GE3

SIA921EDJ-T1-GE3
Mfr. #:
SIA921EDJ-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET 2P-CH 20V 4.5A SC70-6
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIA921EDJ-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SIA921EDJ-T1-GE3 más información
Atributo del producto
Valor de atributo
Tags
SIA921EDJ-T, SIA921, SIA92, SIA9, SIA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET® P-Channel MOSFETs
Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.
Parte # Mfg. Descripción Valores Precio
SIA921EDJ-T1-GE3
DISTI # V72:2272_09216858		Vishay IntertechnologiesTrans MOSFET P-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R
RoHS: Compliant		1
  • 1:$0.8209
SIA921EDJ-T1-GE3
DISTI # V36:1790_09216858		Vishay IntertechnologiesTrans MOSFET P-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R
RoHS: Compliant		0
  • 3000000:$0.2618
  • 1500000:$0.2620
  • 300000:$0.2730
  • 30000:$0.2897
  • 3000:$0.2923
SIA921EDJ-T1-GE3
DISTI # SIA921EDJ-T1-GE3CT-ND		Vishay SiliconixMOSFET 2P-CH 20V 4.5A SC70-6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		13770In Stock
  • 1000:$0.2769
  • 500:$0.3461
  • 100:$0.4378
  • 10:$0.5710
  • 1:$0.6500
SIA921EDJ-T1-GE3
DISTI # SIA921EDJ-T1-GE3DKR-ND		Vishay SiliconixMOSFET 2P-CH 20V 4.5A SC70-6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		13770In Stock
  • 1000:$0.2769
  • 500:$0.3461
  • 100:$0.4378
  • 10:$0.5710
  • 1:$0.6500
SIA921EDJ-T1-GE3
DISTI # SIA921EDJ-T1-GE3TR-ND		Vishay SiliconixMOSFET 2P-CH 20V 4.5A SC70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		12000In Stock
  • 30000:$0.2128
  • 15000:$0.2184
  • 6000:$0.2268
  • 3000:$0.2436
SIA921EDJ-T1-GE3
DISTI # 33258890		Vishay IntertechnologiesTrans MOSFET P-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R
RoHS: Compliant		3000
  • 3000:$0.2302
SIA921EDJ-T1-GE3
DISTI # SIA921EDJ-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA921EDJ-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.2051
  • 18000:$0.2108
  • 12000:$0.2168
  • 6000:$0.2260
  • 3000:$0.2329
SIA921EDJ-T1-GE3
DISTI # SIA921EDJ-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R (Alt: SIA921EDJ-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.2359
  • 18000:€0.2539
  • 12000:€0.2749
  • 6000:€0.3189
  • 3000:€0.4679
SIA921EDJ-T1-GE3
DISTI # 15R4844		Vishay IntertechnologiesMOSFET Transistor Array, FULL REEL,Transistor Polarity:Dual P Channel,Continuous Drain Current Id:-4.5A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.059ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:-1.4V RoHS Compliant: Yes0
  • 50000:$0.2070
  • 30000:$0.2160
  • 20000:$0.2320
  • 10000:$0.2480
  • 5000:$0.2690
  • 1:$0.2760
SIA921EDJ-T1-GE3
DISTI # 63R6002		Vishay IntertechnologiesMOSFET Transistor Array,Transistor Polarity:Dual P Channel,Continuous Drain Current Id:-4.5A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.059ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:-1.4V RoHS Compliant: Yes0
  • 500:$0.3230
  • 250:$0.3580
  • 100:$0.3920
  • 50:$0.4540
  • 25:$0.5160
  • 1:$0.6360
SIA921EDJ-T1-GE3.
DISTI # 15AC4248		Vishay IntertechnologiesTransistor Polarity:Dual P Channel,Continuous Drain Current Id:-4.5A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.059ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:-1.4V,Power Dissipation Pd:7.8W RoHS Compliant: No0
  • 50000:$0.2070
  • 30000:$0.2160
  • 20000:$0.2320
  • 10000:$0.2480
  • 5000:$0.2690
  • 1:$0.2760
SIA921EDJ-T1-GE3
DISTI # 70616553		Vishay SiliconixSIA921EDJ-T1-GE3 Dual P-channel MOSFET Transistor,4.5 A,20 V,6-Pin SC-70
RoHS: Compliant		0
  • 300:$0.4060
  • 600:$0.3640
  • 1500:$0.3230
  • 3000:$0.2810
SIA921EDJ-T1-GE3
DISTI # 781-SIA921EDJ-GE3		Vishay IntertechnologiesMOSFET -20V Vds 12V Vgs PowerPAK SC-70
RoHS: Compliant		3398
  • 1:$0.6300
  • 10:$0.5100
  • 100:$0.3870
  • 500:$0.3200
  • 1000:$0.2560
  • 3000:$0.2310
  • 6000:$0.2160
  • 9000:$0.2080
  • 24000:$0.2000
SIA921EDJ-T1-GE3Vishay Siliconix 1000
    SIA921EDJ-T1-GE3
    DISTI # 8141235P    		Vishay IntertechnologiesTRANS MOSFET P-CH 20V 4.5A, RL400
    • 1000:£0.2230
    • 400:£0.2520
    • 100:£0.2860
    SIA921EDJT1GE3Vishay IntertechnologiesPower Field-Effect Transistor, 4.5A I(D), 20V, 0.059ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		3000
      SIA921EDJ-T1-GE3Vishay IntertechnologiesMOSFET -20V Vds 12V Vgs PowerPAK SC-70
      RoHS: Compliant      		Americas -
        Imagen Parte # Descripción
        SIA921EDJ-T1-GE3

        Mfr.#: SIA921EDJ-T1-GE3

        OMO.#: OMO-SIA921EDJ-T1-GE3

        		 MOSFET -20V Vds 12V Vgs PowerPAK SC-70
        SIA921EDJ-T4-GE3

        Mfr.#: SIA921EDJ-T4-GE3

        OMO.#: OMO-SIA921EDJ-T4-GE3

        		 MOSFET -20V Vds 12V Vgs PowerPAK SC-70
        SIA921EDJ-T1-GE3

        Mfr.#: SIA921EDJ-T1-GE3

        OMO.#: OMO-SIA921EDJ-T1-GE3-VISHAY

        		 MOSFET 2P-CH 20V 4.5A SC70-6
        SIA921EDJ-T1/GE3

        Mfr.#: SIA921EDJ-T1/GE3

        OMO.#: OMO-SIA921EDJ-T1-GE3-1190

        		 Nuevo y original
        SIA921EDJ-T4-GE3

        Mfr.#: SIA921EDJ-T4-GE3

        OMO.#: OMO-SIA921EDJ-T4-GE3-VISHAY

        		 MOSFET 2P-CH 20V 4.5A SC70-6
        SIA921EDJT1GE3

        Mfr.#: SIA921EDJT1GE3

        OMO.#: OMO-SIA921EDJT1GE3-1190

        		 Power Field-Effect Transistor, 4.5A I(D), 20V, 0.059ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
        Disponibilidad
        Valores:
        Available
        En orden:
        4500
        Ingrese la cantidad:
        El precio actual de SIA921EDJ-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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