VND1NV04TR-E

Mfr. #:: VND1NV04TR-E
Fabricante:: STMicroelectronics
Descripción:: Gate Drivers N-Ch 40V 1.7A Omni
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: VND1NV04TR-E Ficha de datos
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ECAD Model:
Más información:: VND1NV04TR-E más información VND1NV04TR-E Product Details

Atributo del producto
Valor de atributo

Fabricante:: STMicroelectronics

Categoria de producto:: Controladores de puerta

RoHS:: Y

Producto:: Controladores de la puerta MOSFET

Estilo de montaje:: SMD / SMT

Paquete / Caja:: DPAK-2

Número de conductores:: 1 Driver

Número de salidas:: 1 Output

Corriente de salida:: 1.7 A

Configuración:: Único

Hora de levantarse:: 170 ns

Otoño:: 200 ns

Corriente de suministro de funcionamiento:: 100 uA

Pd - Disipación de energía:: 35 W

Temperatura mínima de funcionamiento:: - 40 C

Temperatura máxima de funcionamiento:: + 150 C

Serie:: VND1NV04

Calificación:: AEC-Q100

Embalaje:: Carrete

Tecnología:: Si

Marca:: STMicroelectronics

Apagar:: Yes

Tiempo máximo de retardo de apagado:: 1000 ns

Tiempo máximo de retardo de encendido:: 200 ns

Sensible a la humedad:: Yes

Tipo de producto:: Controladores de puerta

Rds On - Resistencia de la fuente de drenaje:: 250 mOhms

Cantidad de paquete de fábrica:: 2500

Subcategoría:: PMIC: circuitos integrados de administración de energía

Unidad de peso:: 0.007055 oz

Tags: VND1NV, VND1N, VND1, VND

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

VND1NV04TR-E Puntajes y reseñas

V***v

Excellent quality. Same parts as chip and dip.

2019-04-18

J***a

Very happy with the purchase

2019-05-09

E**a

Works correctly, Thx

2019-03-19

A***i

all ok.

2019-03-05

VND1NV04TR-E Descripción

***ure Electronics: Single N-Channel 55 V 500 mOhm 35 W V Ipower M0 Technology SMT Mosfet - TO-252-3

***-Wing Technology: Tape & Reel (TR) VND1N Current Limiting (Fixed) Over Temperature Over Voltage e3 power distribution switch 6.6mm 40V 200ns 500mA

***nell: PWR MOSFET 40V 1.7A DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 500mA; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.25ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 35W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (17-Dec-2015); Current Id Max: 1.7A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 45V; Voltage Vgs Rds on Measurement: 5V

***emi: PowerTrench® MOSFET, N-Channel, 40V, 28A, 24mΩ

***ure Electronics: N-Channel 40 V 24 mOhm Surface Mount PowerTrench® Mosfet - TO-252-3

***r Electronics: Power Field-Effect Transistor, 9A I(D), 40V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***nell: MOSFET, N CH, 40V, 28A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.1V; Power Dissipation Pd:30W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, fast switching speed and extremely low rDS(on).

***emi: PowerTrench® MOSFET, N-Channel, 40V, 50A, 5.2mΩ

***hard Electronics: In a Pack of 2, N-Channel MOSFET, 145 A, 40 V, 3-Pin DPAK ON Semiconductor FDD8444

***ure Electronics: FDD8444 Series 40 V 5.2 mOhm N-Channel PowerTrench Mosfet TO-252-3

***nell: MOSFET, N CH, 40V, 0.004OHM, 145A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 145A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.004ohm; Rds(on) Test Voltage Vgs: 10V;

*** Stop Electro: Power Field-Effect Transistor, 155A I(D), 40V, 5.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ark: MOSFET, N, D-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:40V; Current, Id Cont:17.5A; Resistance, Rds On:0.0052ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.5V; Case Style:DPAK; Termination ;RoHS Compliant: Yes

***emi: P-Channel owerTrench® MOSFET, -40V, -14A, 44mΩ

*** Source Electronics: Trans MOSFET P-CH Si 40V 6.7A 3-Pin(2+Tab) DPAK T/R / MOSFET P-CH 40V 6.7A DPAK

***ure Electronics: P-Channel 40 V 44 mOhm Surface Mount PowerTrench Mosfet TO-252-3

***sible Micro: XTR,PWR,MFT,FDD4243,DPK -40V,-14A,40mOHM,P-CHNL POWER MOSFET,D-PAK PKG

***roFlash: Power Field-Effect Transistor, 6.7A I(D), 40V, 0.064ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***rchild Semiconductor: This P-Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications.

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-40V; Continuous Drain Current, Id:-6.7A; On Resistance, Rds(on):36mohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:-1.6V ;RoHS Compliant: Yes

***trelec: Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -14 / Drain-Source Voltage (Vds) V = -40 / ON Resistance (Rds(on)) mOhm = 44 / Gate-Source Voltage V = 20 / Fall Time ns = 7 / Rise Time ns = 15 / Turn-OFF Delay Time ns = 22 / Turn-ON Delay Time ns = 6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 42

*** Electronics: N-channel MOSFET Transistor, 40 A, 30 V, 3-pin PG-TO-252-3-11

***ure Electronics: N-Channel 30 V 9 mOhm 15 nC OptiMOS3 Power-Transistor - TO-252-3

***ark: MOSFET, N CHANNEL, 30V, 40A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.2V RoHS Compliant: Yes

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TO252-3, RoHS

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 40 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 9 / Gate-Source Voltage V = 20 / Fall Time ns = 2.6 / Rise Time ns = 3 / Turn-OFF Delay Time ns = 15 / Turn-ON Delay Time ns = 4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Power Dissipation (Pd) W = 42

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***ure Electronics: Single N-Channel 40 V 3.6 mOhm 59 nC OptiMOS Power Mosfet - DPAK

***ark: MOSFET, N CHANNEL, 40V, 90A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:90A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.2V RoHS Compliant: Yes

***nsix Microsemi: Power Field-Effect Transistor, 90A I(D), 40V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ineon SCT: OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops, PG-TO252-3, RoHS

***ineon: OptiMOS 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applictions; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Isolated DC-DC converters; Motor control; Or-ing switches

***ical: Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R

***icontronic: Power Field-Effect Transistor, 89A I(D), 30V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ment14 APAC: MOSFET, N CH, 90A, 30V, PG-TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Power Dissipation Pd:79W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TO252-3, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

Market price

Parte #	Mfg.	Descripción	Valores	Precio
VND1NV04TR-E DISTI # V36:1790_06568890	STMicroelectronics	Power Switch Lo Side 1.7A 3-Pin(2+Tab) TO-252 T/R RoHS: Compliant	102500	2500:$0.4993
VND1NV04TR-E DISTI # V72:2272_17717878	STMicroelectronics	Power Switch Lo Side 1.7A 3-Pin(2+Tab) TO-252 T/R RoHS: Compliant	2500	1000:$0.4541 500:$0.5572 250:$0.6191 100:$0.6879 25:$0.7124 10:$0.7916 1:$0.8795
VND1NV04TR-E DISTI # VND1NV04TR-E-ND	STMicroelectronics	IC PWR MOSFET 40V 1.7A DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$0.5529
VND1NV04TR-E DISTI # 32873732	STMicroelectronics	Power Switch Lo Side 1.7A 3-Pin(2+Tab) TO-252 T/R RoHS: Compliant	102500	2500:$0.4993
VND1NV04TR-E DISTI # 32825657	STMicroelectronics	Power Switch Lo Side 1.7A 3-Pin(2+Tab) TO-252 T/R RoHS: Compliant	2500	2500:$0.5625
VND1NV04TR-E DISTI # 32729186	STMicroelectronics	Power Switch Lo Side 1.7A 3-Pin(2+Tab) TO-252 T/R RoHS: Compliant	2500	1000:$0.4882 500:$0.5990 250:$0.6655 100:$0.7395 25:$0.7658 13:$0.8510
VND1NV04TR-E DISTI # VND1NV04TR-E	STMicroelectronics	Power Switch Lo Side 1.7A 3-Pin(2+Tab) TO-252 T/R - Tape and Reel (Alt: VND1NV04TR-E) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 2500	2500:$0.4909 5000:$0.4779 10000:$0.4659 15000:$0.4539 25000:$0.4429
VND1NV04TR-E DISTI # VND1NV04TR-E	STMicroelectronics	Power Switch Lo Side 1.7A 3-Pin(2+Tab) TO-252 T/R (Alt: VND1NV04TR-E) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 22500	1:€0.6620 10:€0.6020 100:€0.5530 250:€0.5090 500:€0.4750 2000:€0.4370 6000:€0.4280
VND1NV04TR-E. DISTI # 96AC4781	STMicroelectronics	ABD VIPOWER ROHS COMPLIANT: YES	0	1:$0.7180
VND1NV04TR-E DISTI # 511-VND1NV04TR-E	STMicroelectronics	Gate Drivers N-Ch 40V 1.7A Omni RoHS: Compliant	2720	1:$1.1700 10:$1.0000 100:$0.7720 500:$0.6830 1000:$0.5390 2500:$0.4780 10000:$0.4600
VND1NV04-E DISTI # 511-VND1NV04-E	STMicroelectronics	Gate Drivers OMNIFETII FULLY AUTO PROTECT Pwr MOSFET RoHS: Compliant	2678	1:$1.3000 10:$1.1100 100:$0.8520 500:$0.7530 1000:$0.5940
VND1NV0413TR DISTI # 511-VND1NV0413TR	STMicroelectronics	Gate Drivers N-Ch 40V 1.7A Omni RoHS: Not compliant	0
VND1NV04TR-E DISTI # 8091565P	STMicroelectronics	STMICROELECTRONICSVND1NV04TR-E, RL	1930	200:£0.5800 100:£0.6110
VND1NV04TR-E DISTI # VND1NV04TR-E	STMicroelectronics	Driver,low-side,1.7A,35W,Channels:1,DPAK,Package: reel, tape	2364	1:$1.0500 3:$0.9600 10:$0.7900 100:$0.7200 500:$0.6200

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Disponibilidad

Valores:: Available
En orden:: 1985
Ingrese la cantidad:

El precio actual de VND1NV04TR-E es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~1,17 US$~~; ~~1,17 US$~~

10: ~~1,00 US$~~; ~~10,00 US$~~

100: ~~0,77 US$~~; ~~77,20 US$~~

500: ~~0,68 US$~~; ~~341,50 US$~~

1000: ~~0,54 US$~~; ~~539,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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VND1NV 6
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