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PXFC211507SCV1R250XTMA1

PXFC211507SCV1R250XTMA1
Mfr. #:
PXFC211507SCV1R250XTMA1
Fabricante:
Infineon Technologies
Descripción:
RF MOSFET Transistors RFP-LD10M
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
PXFC211507SCV1R250XTMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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HTML Datasheet:
PXFC211507SCV1R250XTMA1 DatasheetPXFC211507SCV1R250XTMA1 Datasheet (P4-P6)PXFC211507SCV1R250XTMA1 Datasheet (P7-P9)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Transistores RF MOSFET
Tecnología:
Si
Paquete / Caja:
H-37248-4
Embalaje:
Carrete
Marca:
Infineon Technologies
Tipo de producto:
Transistores RF MOSFET
Cantidad de paquete de fábrica:
250
Subcategoría:
MOSFET
Parte # Alias:
PXFC211507SC R250 SP001232280 V1
Tags
PXFC2, PXFC, PXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 65V 4-Pin H-37248G T/R TXV Level Screening
***i-Key
IC AMP RF LDMOS
***ineon
High Power RF LDMOS FET 150W, 28V, 2110 2170MHz | Summary of Features: Broadband internal input and output matching Typical Pulsed CW performance, 2170 MHz, 28 V, 10 s pulse width, 10% duty cycle - Output power at P1dB = 150 W - Efficiency = 56% - Gain = 19 dB Typical single-carrier WCDMA performance, 2170 MHz, 28 V, 8 dB PAR @ 0.01% CCDF, Test Model 1 with 64DPCH - Output power = 32 W - Efficiency = 32% - Gain = 20 dB Capable of handling 10:1 VSWR @28 V, 150 W (CW) output power Integrated ESD protection ESD Rating: Human Body Model, Class 2 (per ANSI/ESDA/JEDEC JS-001) Low thermal resistance Pb-free and RoHS compliant
Parte # Mfg. Descripción Valores Precio
PXFC211507SCV1R250XTMA1
DISTI # PXFC211507SCV1R250XTMA1-ND		Infineon Technologies AGIC AMP RF LDMOS
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 250:$63.7000
PXFC211507SCV1R250XTMA1
DISTI # 726-FC211507SCV1R250		Infineon Technologies AGRF MOSFET Transistors RFP-LD10M0
    Imagen Parte # Descripción
    PXFC211507SCV1R250XTMA1

    Mfr.#: PXFC211507SCV1R250XTMA1

    OMO.#: OMO-PXFC211507SCV1R250XTMA1

    		 RF MOSFET Transistors RFP-LD10M
    PXFC211507SCV1R250XTMA1

    Mfr.#: PXFC211507SCV1R250XTMA1

    OMO.#: OMO-PXFC211507SCV1R250XTMA1-INFINEON-TECHNOLOGIES

    		 RF MOSFET Transistors RFP-LD10M
    PXFC211507SC

    Mfr.#: PXFC211507SC

    OMO.#: OMO-PXFC211507SC-1190

    		 Nuevo y original
    Disponibilidad
    Valores:
    Available
    En orden:
    3500
    Ingrese la cantidad:
    El precio actual de PXFC211507SCV1R250XTMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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