SI5922DU-T1-GE3

SI5922DU-T1-GE3
Mfr. #:
SI5922DU-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET 2 N-CH 30V 6A POWERPAK
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI5922DU-T1-GE3 Ficha de datos
Entrega:
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HTML Datasheet:
SI5922DU-T1-GE3 DatasheetSI5922DU-T1-GE3 Datasheet (P4-P6)SI5922DU-T1-GE3 Datasheet (P7)
ECAD Model:
Atributo del producto
Valor de atributo
Tags
SI592, SI59, SI5
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual N-Channel 30 V 19.2 mOhm 10.4 W TrenchFET Mosfet -PowerPAK ChipFET Dual
***ical
Trans MOSFET N-CH 30V 6A 8-Pin PowerPAK ChipFET T/R
***et Europe
MOSFET Dual N-Channel 30V 6A 8-Pin PowerPAK T/R
***i-Key
MOSFET 2 N-CH 30V 6A POWERPAK
***ark
Mosfet, Dual N-Ch, 30V, Powerpak Chipfet; Transistor Polarity:n Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0155Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, DUAL N-CH, 30V, POWERPAK CHIPFET; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0155ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:10.4W; Transistor Case Style:PowerPAK ChipFET; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015)
***nell
MOSFET, DOPPIO CA-N 30V POWERPAK CHIPFET; Polarità Transistor:Canale N; Corrente Continua di Drain Id:6A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.0155ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.2V; Dissipazione di Potenza Pd:10.4W; Modello Case Transistor:PowerPAK ChipFET; No. di Pin:6Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (17-Dec-2015)
Parte # Mfg. Descripción Valores Precio
SI5922DU-T1-GE3
DISTI # V72:2272_17597373
Vishay IntertechnologiesDual N-Channel 30 V (D-S) MOSFET5817
  • 75000:$0.1569
  • 30000:$0.1749
  • 15000:$0.1928
  • 6000:$0.2108
  • 3000:$0.2287
  • 1000:$0.2467
  • 500:$0.2647
  • 250:$0.2826
  • 100:$0.3006
  • 50:$0.4081
  • 25:$0.4122
  • 10:$0.4622
  • 1:$0.6058
SI5922DU-T1-GE3
DISTI # SI5922DU-T1-GE3CT-ND
Vishay SiliconixMOSFET 2 N-CH 30V 6A POWERPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1311In Stock
  • 1000:$0.2160
  • 500:$0.2796
  • 100:$0.3558
  • 10:$0.4770
  • 1:$0.5600
SI5922DU-T1-GE3
DISTI # SI5922DU-T1-GE3DKR-ND
Vishay SiliconixMOSFET 2 N-CH 30V 6A POWERPAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1311In Stock
  • 1000:$0.2160
  • 500:$0.2796
  • 100:$0.3558
  • 10:$0.4770
  • 1:$0.5600
SI5922DU-T1-GE3
DISTI # SI5922DU-T1-GE3TR-ND
Vishay SiliconixMOSFET 2 N-CH 30V 6A POWERPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 30000:$0.1579
  • 15000:$0.1666
  • 6000:$0.1789
  • 3000:$0.1912
SI5922DU-T1-GE3
DISTI # 25817691
Vishay IntertechnologiesDual N-Channel 30 V (D-S) MOSFET5817
  • 43:$0.6058
SI5922DU-T1-GE3
DISTI # SI5922DU-T1-GE3
Vishay IntertechnologiesMOSFET Dual N-Channel 30V 6A 8-Pin PowerPAK T/R - Tape and Reel (Alt: SI5922DU-T1-GE3)
RoHS: Not Compliant
Min Qty: 6000
Container: Reel
Americas - 0
  • 60000:$0.1499
  • 30000:$0.1539
  • 18000:$0.1589
  • 12000:$0.1649
  • 6000:$0.1709
SI5922DU-T1-GE3
DISTI # SI5922DU-T1-GE3
Vishay IntertechnologiesMOSFET Dual N-Channel 30V 6A 8-Pin PowerPAK T/R (Alt: SI5922DU-T1-GE3)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel
Europe - 0
  • 500:€1.5900
  • 1000:€1.5900
  • 50:€1.6900
  • 100:€1.6900
  • 25:€1.8900
  • 10:€2.2900
  • 1:€2.9900
SI5922DU-T1-GE3
DISTI # 20AC3931
Vishay IntertechnologiesDUAL N-CHANNEL 30-V (D-S) MOSFET0
  • 50000:$0.1520
  • 30000:$0.1590
  • 20000:$0.1710
  • 10000:$0.1830
  • 5000:$0.1980
  • 1:$0.2030
SI5922DU-T1-GE3
DISTI # 99Y9656
Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, POWERPAK CHIPFET,Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0155ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power RoHS Compliant: Yes89
  • 500:$1.5800
  • 250:$1.6800
  • 100:$1.8000
  • 50:$1.9200
  • 25:$2.0500
  • 10:$2.1700
  • 1:$2.3000
SI5922DU-T1-GE3
DISTI # 78-SI5922DU-T1-GE3
Vishay IntertechnologiesMOSFET N-Ch 30V Vds 4.7nC Qg Typ
RoHS: Compliant
2857
  • 1:$0.5600
  • 10:$0.4250
  • 100:$0.3150
  • 500:$0.2590
  • 1000:$0.2000
  • 3000:$0.1830
  • 6000:$0.1710
  • 9000:$0.1590
  • 24000:$0.1530
SI5922DU-T1-GE3
DISTI # 2663705
Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, POWERPAK CHIPFET
RoHS: Compliant
89
  • 1:$2.5500
SI5922DU-T1-GE3
DISTI # 2663705
Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, POWERPAK CHIPFET50
  • 500:£1.4200
  • 250:£1.5200
  • 100:£1.6500
  • 10:£1.8500
  • 1:£2.2200
Imagen Parte # Descripción
SI5922DU-T1-GE3

Mfr.#: SI5922DU-T1-GE3

OMO.#: OMO-SI5922DU-T1-GE3-VISHAY

MOSFET 2 N-CH 30V 6A POWERPAK
Disponibilidad
Valores:
Available
En orden:
3000
Ingrese la cantidad:
El precio actual de SI5922DU-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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