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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| FQU8P10TU DISTI # FQU8P10TUOS-ND | ON Semiconductor | MOSFET P-CH 100V 6.6A IPAK RoHS: Compliant Min Qty: 1 Container: Tube | 5026In Stock |
|
| FQU8P10TU DISTI # FQU8P10TU | ON Semiconductor | Trans MOSFET P-CH 100V 6.6A 3-Pin(3+Tab) IPAK Rail - Bulk (Alt: FQU8P10TU) RoHS: Compliant Min Qty: 1000 Container: Bulk | Americas - 0 |
|
| FQU8P10TU DISTI # FQU8P10TU | ON Semiconductor | Trans MOSFET P-CH 100V 6.6A 3-Pin(3+Tab) IPAK Rail (Alt: FQU8P10TU) RoHS: Compliant Min Qty: 5040 | Asia - 0 |
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| FQU8P10TU DISTI # FQU8P10TU | ON Semiconductor | Trans MOSFET P-CH 100V 6.6A 3-Pin(3+Tab) IPAK Rail - Rail/Tube (Alt: FQU8P10TU) RoHS: Compliant Min Qty: 5040 Container: Tube | Americas - 0 |
|
| FQU8P10TU DISTI # 82C4429 | ON Semiconductor | TRANSISTOR,MOSFET,P-CHANNEL,100V V(BR)DSS,6.6A I(D),TO-251AA ROHS COMPLIANT: YES | 0 |
|
| FQU8P10TU DISTI # 512-FQU8P10TU | ON Semiconductor | MOSFET -100V Single RoHS: Compliant | 6497 |
|
| FQU8P10TU | ON Semiconductor | Power Field-Effect Transistor, 6.6A I(D), 100V, 0.53ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 RoHS: Compliant | 20160 |
|
| FQU8P10TU | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 6.6A I(D), 100V, 0.53ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 RoHS: Compliant | 99566 |
|
| FQU8P10TU | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 6.6A I(D), 100V, 0.53ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 RoHS: Not Compliant | Europe - 1960 |
| Imagen | Parte # | Descripción |
|---|---|---|
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Mfr.#: FQU8P10TU OMO.#: OMO-FQU8P10TU |
MOSFET -100V Single |
|
Mfr.#: FQU8P10TU |
MOSFET P-CH 100V 6.6A IPAK |
|
Mfr.#: FQU8P10TU,FQU8P10 OMO.#: OMO-FQU8P10TU-FQU8P10-1190 |
Nuevo y original |
|
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Mfr.#: FQU8P10TU_NL OMO.#: OMO-FQU8P10TU-NL-1190 |
Nuevo y original |