IXXK100N60B3H1

IXXK100N60B3H1
Mfr. #:
IXXK100N60B3H1
Fabricante:
Littelfuse
Descripción:
IGBT Transistors XPT IGBT B3-Class 600V/190Amp CoPacked
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXXK100N60B3H1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXXK100N60B3H1 DatasheetIXXK100N60B3H1 Datasheet (P4-P6)IXXK100N60B3H1 Datasheet (P7)
ECAD Model:
Más información:
IXXK100N60B3H1 más información
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-264-3
Estilo de montaje:
A través del orificio
Voltaje colector-emisor VCEO Max:
600 V
Voltaje de saturación colector-emisor:
1.8 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
190 A
Pd - Disipación de energía:
695 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
IXXK100N60
Embalaje:
Tubo
Altura:
26.59 mm
Longitud:
20.29 mm
Ancho:
5.31 mm
Marca:
IXYS
Corriente de fuga puerta-emisor:
100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
25
Subcategoría:
IGBT
Nombre comercial:
XPT
Unidad de peso:
0.352740 oz
Tags
IXXK1, IXXK, IXX
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Discrete 600V XPT IGBTs
IXYS Discrete 600V XPT Insulated-Gate Bipolar Transistors (IGBTs) are highly rugged, low loss semiconductor devices that are easily configured in parallel. Developed using IXYS' extreme light punch through (XPT) design platform, these new devices feature excellent electrical characteristics which include low typical Vcesat, low typical current fall times, and low typical turn-off energy per pulse values. They demonstrate exceptional ruggedness during switching and under short circuit conditions, achieved through a 10us short circuit safe operating area (SCSOA), dynamic avalanche ratings, and a square reverse bias safe operating area (RBSOA) rated up to the device's blocking voltage. These devices also feature an extended forward bias safe operating area (FBSOA), allowing for a wider operating window as dictated by the power limitations of the device.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Parte # Mfg. Descripción Valores Precio
IXXK100N60B3H1
DISTI # IXXK100N60B3H1-ND
IXYS CorporationIGBT 600V 200A 695W TO264
RoHS: Compliant
Min Qty: 25
Container: Tube
Temporarily Out of Stock
  • 25:$17.8712
IXXK100N60B3H1
DISTI # 747-IXXK100N60B3H1
IXYS CorporationIGBT Transistors XPT IGBT B3-Class 600V/190Amp CoPacked
RoHS: Compliant
29
  • 1:$20.2400
  • 10:$18.4000
  • 25:$17.0200
  • 50:$16.0400
  • 100:$15.6400
  • 250:$14.2600
  • 500:$13.3400
IXXK100N60B3H1
DISTI # XSFP00000086193
IXYS Corporation 
RoHS: Compliant
84
  • 25:$18.3600
  • 84:$17.2100
Imagen Parte # Descripción
AD7656BSTZ-1

Mfr.#: AD7656BSTZ-1

OMO.#: OMO-AD7656BSTZ-1

Analog to Digital Converters - ADC 250kSPS 6Ch Simult Sampling Bipolar 16B
REF2030AIDDCR

Mfr.#: REF2030AIDDCR

OMO.#: OMO-REF2030AIDDCR

Voltage References Low-Drift, Lw-Pwr Dual Output Volt Ref
IRFR9120NTRLPBF

Mfr.#: IRFR9120NTRLPBF

OMO.#: OMO-IRFR9120NTRLPBF

MOSFET MOSFT PCh -6.5A 480mOhm 18nC
SN74LVC2G08DCTR

Mfr.#: SN74LVC2G08DCTR

OMO.#: OMO-SN74LVC2G08DCTR

Logic Gates Dual 2-Input Pos
IXFN90N85X

Mfr.#: IXFN90N85X

OMO.#: OMO-IXFN90N85X

MOSFET 850V/90A Ultra Junction X-Class
LQW18AN30NJ8ZD

Mfr.#: LQW18AN30NJ8ZD

OMO.#: OMO-LQW18AN30NJ8ZD

Fixed Inductors 0603 31nH 5% 1100mA 0.11ohms 3150MHz
AD7656BSTZ-1

Mfr.#: AD7656BSTZ-1

OMO.#: OMO-AD7656BSTZ-1-ANALOG-DEVICES-INC-ADI

Analog to Digital Converters - ADC 250kSPS 6Ch Simult Sampling Bipolar 16B
REF2030AIDDCR

Mfr.#: REF2030AIDDCR

OMO.#: OMO-REF2030AIDDCR-TEXAS-INSTRUMENTS

Voltage References Low-Drift, Lw-Pwr Dual Output Volt Ref
IRFR9120NTRLPBF

Mfr.#: IRFR9120NTRLPBF

OMO.#: OMO-IRFR9120NTRLPBF-INFINEON-TECHNOLOGIES

MOSFET P-CH 100V 6.6A DPAK
IXFN90N85X

Mfr.#: IXFN90N85X

OMO.#: OMO-IXFN90N85X-IXYS-CORPORATION

850V/90A ULT JUNC X-C HIPERFET P
Disponibilidad
Valores:
Available
En orden:
1987
Ingrese la cantidad:
El precio actual de IXXK100N60B3H1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
20,24 US$
20,24 US$
10
18,40 US$
184,00 US$
25
17,02 US$
425,50 US$
50
16,04 US$
802,00 US$
100
15,64 US$
1 564,00 US$
250
14,26 US$
3 565,00 US$
500
13,34 US$
6 670,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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