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FS200R12PT4PBOSA1

FS200R12PT4PBOSA1
Mfr. #:
FS200R12PT4PBOSA1
Fabricante:
Infineon Technologies
Descripción:
IGBT Modules MEDIUM POWER ECONO
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FS200R12PT4PBOSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
FS200R12PT4PBOSA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Módulos IGBT
RoHS:
Y
Tecnología:
Si
Producto:
Módulos de silicio IGBT
Configuración:
Inversor IGBT
Voltaje colector-emisor VCEO Max:
1.2 kV
Voltaje de saturación colector-emisor:
1.75 V
Corriente continua del colector a 25 C:
200 A
Corriente de fuga puerta-emisor:
100 nA
Pd - Disipación de energía:
20 mW
Paquete / Caja:
130 mm x 103 mm x 20.55 mm
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Embalaje:
Bandeja
Marca:
Infineon Technologies
Estilo de montaje:
Montaje en chasis
Voltaje máximo del emisor de puerta:
20 V
Tipo de producto:
Módulos IGBT
Cantidad de paquete de fábrica:
6
Subcategoría:
IGBT
Parte # Alias:
FS200R12PT4P SP001061018
Tags
FS200R12P, FS200R1, FS200R, FS200, FS20, FS2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOD IGBT MED PWR ECONO4-1
***et Europe
MEDIUM POWER ECONO
***ark
Igbt, Module, N-Ch, 1.2Kv, 200A; Transistor Polarity:n Channel; Dc Collector Current:200A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:-; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, MODULE, N-CH, 1.2KV, 200A; Transistor Polarity:N Channel; DC Collector Current:200A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:-; Operating Temperature Max:150°C; Product Range:EconoPACK 4 Series; SVHC:No SVHC (27-Jun-2018)
***nell
IGBT, MODULO, CA-N, 1.2KV, 200A; Polarità Transistor:Canale N; Corrente di Collettore CC:200A; Tensione Saturaz Collettore-Emettitore Vce(on):1.75V; Dissipazione di Potenza Pd:-; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:Module; No. di Pin:-; Temperatura di Esercizio Max:150°C; Gamma Prodotti:EconoPACK 4 Series; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
EconoPACK 4 1200V sixpack IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC, PressFIT Contact Technology and pre-applied Thermal Interface Material. | Summary of Features: Extended Operation Temperature T(vj op); Low Switching Losses; Low V(CEsat); V(CEsat) with positive Temperature Coefficient; 2.5 kV AC 1min Insulation; High Power Density; Isolated Base Plate; Standard Housing | Benefits: Compact Modules; Easy and most reliable assembly; No Plugs and Cables required; Ideal for Low Inductive System Designs | Target Applications: drives; solar; cav; ups
EconoPACK™ 4 Power Modules
Infineon Technologies EconoPACK™ 4 Power Modules feature a rugged mechanical design with ultrasonic welded and injection-molded screw terminals. The EconoPACK™ 4 perfectly fits into the well-known Econo portfolio. The devices feature easy assembly with PressFIT control pins and screw power terminals for solderless connections. The modules have an optimized module layout for high-power densities.
Parte # Mfg. Descripción Valores Precio
FS200R12PT4PBOSA1
DISTI # FS200R12PT4PBOSA1-ND		Infineon Technologies AGMOD IGBT MED PWR ECONO4-1
RoHS: Compliant
Min Qty: 6
Container: Tray		Temporarily Out of Stock
  • 6:$218.4350
FS200R12PT4PBOSA1
DISTI # FS200R12PT4PBOSA1		Infineon Technologies AGMEDIUM POWER ECONO - Trays (Alt: FS200R12PT4PBOSA1)
RoHS: Compliant
Min Qty: 6
Container: Tray		Americas - 0
  • 60:$185.2900
  • 36:$189.8900
  • 24:$194.6900
  • 12:$199.6900
  • 6:$202.3900
FS200R12PT4PBOSA1
DISTI # FS200R12PT4PBOSA1		Infineon Technologies AGMEDIUM POWER ECONO - Bulk (Alt: FS200R12PT4PBOSA1)
Min Qty: 2
Container: Bulk		Americas - 0
  • 20:$182.3900
  • 10:$185.6900
  • 6:$192.0900
  • 4:$199.3900
  • 2:$206.7900
FS200R12PT4PBOSA1
DISTI # SP001061018		Infineon Technologies AGMEDIUM POWER ECONO (Alt: SP001061018)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€181.4900
  • 500:€185.6900
  • 100:€191.2900
  • 50:€197.7900
  • 25:€204.6900
  • 10:€225.1900
  • 1:€278.5900
FS200R12PT4PBOSA1
DISTI # 726-FS200R12PT4PBOSA		Infineon Technologies AGIGBT Modules MEDIUM POWER ECONO
RoHS: Compliant		9
  • 1:$223.0400
  • 5:$217.6800
  • 10:$212.2700
  • 25:$209.2900
FS200R12PT4PBOSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 280A I(C), 1200V V(BR)CES, N-Channel
RoHS: Compliant		24
  • 1000:$188.9100
  • 500:$198.8500
  • 100:$207.0200
  • 25:$215.9000
  • 1:$232.5000
FS200R12PT4PBOSA1
DISTI # 2781257		Infineon Technologies AGIGBT, MODULE, N-CH, 1.2KV, 200A
RoHS: Compliant		0
  • 5:$342.7700
  • 1:$355.4600
FS200R12PT4PBOSA1
DISTI # 2781257		Infineon Technologies AGIGBT, MODULE, N-CH, 1.2KV, 200A0
  • 5:£169.0000
  • 1:£172.0000
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 D-Sub High Density Connectors D-SUB HIGH DENSITY
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MGJ2D051505SC

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OMO.#: OMO-MGJ2D051505SC-MURATA-POWER-SOLUTIONS

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RLB0914-102KL

Mfr.#: RLB0914-102KL

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Disponibilidad
Valores:
Available
En orden:
1990
Ingrese la cantidad:
El precio actual de FS200R12PT4PBOSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
223,04 US$
223,04 US$
5
217,68 US$
1 088,40 US$
10
212,27 US$
2 122,70 US$
25
209,29 US$
5 232,25 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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