IPN60R1K0CEATMA1

IPN60R1K0CEATMA1
Mfr. #:
IPN60R1K0CEATMA1
Fabricante:
Infineon Technologies
Descripción:
Trans MOSFET N-CH 600V 6.8A 3-Pin(2+Tab) SOT-223 T/R
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPN60R1K0CEATMA1 Ficha de datos
Entrega:
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Más información:
IPN60R1K0CEATMA1 más información
Atributo del producto
Valor de atributo
Tags
IPN60R1, IPN60, IPN6, IPN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 6.8A 3-Pin(2+Tab) SOT-223 T/R
***ark
Mosfet, N-Ch, 600V, 6.8A, Sot-223-3; Transistor Polarity:n Channel; Continuous Drain Current Id:6.8A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.9Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
Cost-effective drop-in replacement for DPAK | Summary of Features: Drop-in replacement for DPAK at lower cost; Space savings in designs with low power dissipation; Comparable thermal behavior to DPAK | Target Applications: Lighting; Adapter; Consumer
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ CE Power MOSFETs
Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.
CoolMOS CE Power MOSFETs - 600-650V
Infineon 600V/650V CoolMOS™ CE N-Channel Power MOSFETs are a technology platform of Infineon's market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. These 600V/650V CoolMOS™ MOSFETs are cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still been price attractive. These devices target low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications.
Parte # Mfg. Descripción Valores Precio
IPN60R1K0CEATMA1
DISTI # V72:2272_14663632
Infineon Technologies AGTrans MOSFET N-CH 600V 6.8A 3-Pin(2+Tab) SOT-223 T/R
RoHS: Compliant
5905
  • 3000:$0.2155
  • 1000:$0.2371
  • 500:$0.2633
  • 250:$0.2925
  • 100:$0.3251
  • 25:$0.5042
  • 10:$0.5754
  • 1:$0.6501
IPN60R1K0CEATMA1
DISTI # V36:1790_14663632
Infineon Technologies AGTrans MOSFET N-CH 600V 6.8A 3-Pin(2+Tab) SOT-223 T/R
RoHS: Compliant
0
  • 3000000:$0.1731
  • 1500000:$0.1734
  • 300000:$0.1959
  • 30000:$0.2353
  • 3000:$0.2419
IPN60R1K0CEATMA1
DISTI # IPN60R1K0CEATMA1CT-ND
Infineon Technologies AGCONSUMER
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2000In Stock
  • 1000:$0.2571
  • 500:$0.3214
  • 100:$0.4066
  • 10:$0.5300
  • 1:$0.6000
IPN60R1K0CEATMA1
DISTI # IPN60R1K0CEATMA1DKR-ND
Infineon Technologies AGCONSUMER
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2000In Stock
  • 1000:$0.2571
  • 500:$0.3214
  • 100:$0.4066
  • 10:$0.5300
  • 1:$0.6000
IPN60R1K0CEATMA1
DISTI # IPN60R1K0CEATMA1TR-ND
Infineon Technologies AGCONSUMER
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 30000:$0.1997
  • 15000:$0.2106
  • 6000:$0.2262
  • 3000:$0.2419
IPN60R1K0CEATMA1
DISTI # 32826247
Infineon Technologies AGTrans MOSFET N-CH 600V 6.8A 3-Pin(2+Tab) SOT-223 T/R
RoHS: Compliant
30000
  • 3000:$0.1862
IPN60R1K0CEATMA1
DISTI # 32005768
Infineon Technologies AGTrans MOSFET N-CH 600V 6.8A 3-Pin(2+Tab) SOT-223 T/R
RoHS: Compliant
5905
  • 34:$0.6501
IPN60R1K0CEATMA1
DISTI # IPN60R1K0CEATMA1
Infineon Technologies AGTrans MOSFET N 650V 6.8A 3-Pin SOT-223 T/R - Tape and Reel (Alt: IPN60R1K0CEATMA1)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.1879
  • 18000:$0.1919
  • 12000:$0.1979
  • 6000:$0.2059
  • 3000:$0.2139
IPN60R1K0CEATMA1
DISTI # IPN60R1K0CE
Infineon Technologies AGTrans MOSFET N 650V 6.8A 3-Pin SOT-223 T/R (Alt: IPN60R1K0CE)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 0
  • 150000:$0.1881
  • 75000:$0.1905
  • 30000:$0.1930
  • 15000:$0.1955
  • 9000:$0.2008
  • 6000:$0.2064
  • 3000:$0.2123
IPN60R1K0CEATMA1
DISTI # SP001434884
Infineon Technologies AGTrans MOSFET N 650V 6.8A 3-Pin SOT-223 T/R (Alt: SP001434884)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 30000:€0.1759
  • 18000:€0.1899
  • 12000:€0.2059
  • 6000:€0.2239
  • 3000:€0.2739
IPN60R1K0CEATMA1
DISTI # 97Y1832
Infineon Technologies AGMOSFET, N-CH, 600V, 6.8A, SOT-223-3,Transistor Polarity:N Channel,Continuous Drain Current Id:6.8A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.9ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes0
  • 1000:$0.2560
  • 500:$0.2800
  • 250:$0.3050
  • 100:$0.3300
  • 50:$0.4010
  • 25:$0.4720
  • 10:$0.5420
  • 1:$0.6460
IPN60R1K0CEATMA1
DISTI # 726-IPN60R1K0CEATMA1
Infineon Technologies AGMOSFET CONSUMER
RoHS: Compliant
5848
  • 1:$0.6400
  • 10:$0.5370
  • 100:$0.3270
  • 1000:$0.2530
  • 3000:$0.2160
IPN60R1K0CEATMA1
DISTI # 1300917P
Infineon Technologies AGMOSFET N-CH 600V 11A COOLMOS CE SOT-223, RL1725
  • 2500:£0.2340
  • 1000:£0.2460
  • 500:£0.2650
  • 125:£0.2690
IPN60R1K0CEATMA1
DISTI # 2617448
Infineon Technologies AGMOSFET, N-CH, 600V, 6.8A, SOT-223-32613
  • 500:£0.1830
  • 250:£0.2110
  • 100:£0.2380
  • 25:£0.4090
  • 5:£0.4630
IPN60R1K0CEATMA1
DISTI # 2617448
Infineon Technologies AGMOSFET, N-CH, 600V, 6.8A, SOT-223-3
RoHS: Compliant
1478
  • 1000:$0.3880
  • 500:$0.4850
  • 100:$0.6130
  • 10:$0.7990
  • 1:$0.9000
Imagen Parte # Descripción
IPN60R1K0CEATMA1

Mfr.#: IPN60R1K0CEATMA1

OMO.#: OMO-IPN60R1K0CEATMA1

MOSFET CONSUMER
IPN60R1K5CEATMA1

Mfr.#: IPN60R1K5CEATMA1

OMO.#: OMO-IPN60R1K5CEATMA1

MOSFET CONSUMER
IPN60R1K5CEATMA1

Mfr.#: IPN60R1K5CEATMA1

OMO.#: OMO-IPN60R1K5CEATMA1-INFINEON-TECHNOLOGIES

Trans MOSFET N-CH 600V 5A 3-Pin SOT-223 T/R
IPN60R1K0CE

Mfr.#: IPN60R1K0CE

OMO.#: OMO-IPN60R1K0CE-1190

Nuevo y original
IPN60R1K0CEATMA1

Mfr.#: IPN60R1K0CEATMA1

OMO.#: OMO-IPN60R1K0CEATMA1-INFINEON-TECHNOLOGIES

Trans MOSFET N-CH 600V 6.8A 3-Pin(2+Tab) SOT-223 T/R
IPN60R1K5CE

Mfr.#: IPN60R1K5CE

OMO.#: OMO-IPN60R1K5CE-1190

600V,5A,1.5��,N-Channel Power MOSFET
Disponibilidad
Valores:
Available
En orden:
4000
Ingrese la cantidad:
El precio actual de IPN60R1K0CEATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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