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IKW40N65WR5XKSA1

IKW40N65WR5XKSA1
Mfr. #:
IKW40N65WR5XKSA1
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors The reverse conducting TRENCHSTOP 5 WR5 IGBT was specifically optimized for full rated hard switching turn off typically found in Welding inverter application. Excellent price/perform
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IKW40N65WR5XKSA1 Ficha de datos
Entrega:
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HTML Datasheet:
IKW40N65WR5XKSA1 Datasheet
ECAD Model:
Más información:
IKW40N65WR5XKSA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
650 V
Voltaje de saturación colector-emisor:
1.4 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
80 A
Pd - Disipación de energía:
230 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
TRENCHSTOP 5 WR5
Embalaje:
Tubo
Marca:
Infineon Technologies
Corriente de fuga puerta-emisor:
100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
240
Subcategoría:
IGBT
Nombre comercial:
TRENCHSTOP
Parte # Alias:
IKW40N65WR5 SP001174974
Tags
IKW40N65W, IKW40N65, IKW40N6, IKW40N, IKW4, IKW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Stop Electro
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247
***ark
Igbt, Single, 650V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.4V; Power Dissipation Pd:230W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IKW40N65WR5XKSA1
***ineon
The reverse conducting TRENCHSTOP 5 WR5 IGBT was specifically optimized for full rated hard switching turn off typically found in Welding inverter application. Excellent price/performance ratio of WR5 IGBT allows access to the high performance technology also for cost sensitive customers. WR5 is recommended for use in AC-DC PFC stage in Welding, UPS and Solar. | Summary of Features: Optimized for full rated hard switching turn off typically found in Welding; Very low V ce(sat) of 1.35V @25C; Low E tot; Soft recovery and low Q rr for diode; Good R goff controllability | Benefits: Best price/performance ratio; Good fit to mainstream design of fsw>20kHz; Low T j & T c for lower heatsink and cooling cost | Target Applications: Welding; UPS; Solar
*** Stop Electro
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247
***ark
Igbt, Single, 650V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.35V; Power Dissipation Pd:230W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IHW40N65R5XKSA1
***ineon SCT
Infineon combines the industry leading performance of the TRENCHSTOP™ 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices, PG-TO247-3, RoHS
***ineon
Infineon combines the industry leading performance of the TRENCHSTOP 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices. With a monolithically integrated diode, the 650V RC-H5 IGBTs are perfectly suited for soft switching applications such as induction cooking stoves and inverterized microwave ovens, but are also suitable for designs which require some hard switching capabilities as well. | Summary of Features: Lowest V CE(sat) and optimized E off for loss reduction up to 30% compared to previous generation; 650V blocking voltage; Hard switching capable | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature for higher device reliability; 50V higher voltage possible for increased reliability; Performs well in designs with higher switching frequencies up to 40kHz | Target Applications: Induction cooking stoves; Inverterized microwave ovens; Other resonant switching topologies
***ure Electronics
IHW50N65R5 Series 650 V 80 A 282 W Reverse Conducting IGBT - PG-TO-247-3
***ark
Igbt, Single, 650V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.35V; Power Dissipation Pd:282W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IHW50N65R5XKSA1
***ineon SCT
Infineon combines the industry leading performance of the TRENCHSTOP™ 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices, PG-TO247-3, RoHS
***ineon
Infineon combines the industry leading performance of the TRENCHSTOP 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices. With a monolithically integrated diode, the 650V RC-H5 IGBTs are perfectly suited for soft switching applications such as induction cooking stoves and inverterized microwave ovens, but are also suitable for designs which require some hard switching capabilities as well. | Summary of Features: Lowest V CE(sat) and optimized E off for loss reduction up to 30% compared to previous generation; 650V blocking voltage; Hard switching capable | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature for higher device reliability; 50V higher voltage possible for increased reliability; Performs well in designs with higher switching frequencies up to 40kHz | Target Applications: Induction cooking stoves; Inverterized microwave ovens; Other resonant switching topologies
***ical
Trans IGBT Chip N-CH 650V 80A 395000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
IKW75N65ES5: 650 V 80 A TRENCHSTOPTM 5 Soft Switching IGBT - PG-TO247-3
*** Source Electronics
5 high Speed soft switching IGBT with full current rated RAPID 1 diode
***ark
Igbt, Single, 650V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.42V; Power Dissipation Pd:395W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IKW75N65ES5XKSA1
***ineon SCT
The 650 V, 75 A hard-switching TRENCHSTOP™ 5 S5 IGBT in a TO247 package addresses applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization, PG-TO247-3, RoHS
***ineon
TRENCHSTOP 5 S5 is the new IGBT family addressing applications switching between 10kHz and 40kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization. | Summary of Features: Very low V CE(sat) of 1.35V at 25C, 20% lower than TRENCHSTOP 5 H5; I C(n)=four times nominal current (100C T c); Soft current fall characteristics with no tail current; Symmetrical, low voltage overshoot; Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping; Maximum junction temperature T vj=175C; Qualified according to JEDEC standards | Benefits: V CE(peak) clamping circuits not required; Suitable for use with single turn-on / turn-off gate resistor; No need for gate clamping components; Gate drivers with Miller clamping not required; Reduction in the EMI filtering needed; Excellent for paralleling | Target Applications: Storage; UPS; Welding; Solar; Charger
***ical
Trans IGBT Chip N=-CH 650V 80A 290000mW 3-Pin(3+Tab) TO-247AB Tube
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild®’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
***nell
IGBT,N CH,W DIODE,650V,80A,TO247AB; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:650V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:650V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:290W
***roFlash
Igbt Single Transistor, 80 A, 1.7 V, 366 W, 650 V, To-247, 3 Rohs Compliant: Yes
***ical
Trans IGBT Chip N-CH 650V 80A 36000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
NGTB40N65: 650 V 80 A 366 W Through Hole Field Stop II IGBT - TO-247-3
***nell
650V/40A FAST IGBT FSII T; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 366W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
***ical
Trans IGBT Chip N=-CH 650V 80A 268000mW 3-Pin(3+Tab) TO-247 Tube
***ark
650V FIELD STOP TRENCH IGBT - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
***ure Electronics
FGH40T65UPD Series 650 V 40 A Field Stop Trench IGBT - TO-247-3
***rchild Semiconductor
Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital power generator where low conduction and switching losses are essential.
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 WR5 Reverse Conducting IGBTs
Infineon TRENCHSTOP™ 5 WR5 Reverse Conducting IGBTs are a special reverse conducting IGBT family optimized for full rated hard switching turn off typically found in Welding inverter applications. These IGBTs offer good performance at an attractive price. The WR5 IGBTs have an excellent price to performance ratio and are recommended for use in AC-DC PFC stage in welding, UPS, and solar.
Parte # Mfg. Descripción Valores Precio
IKW40N65WR5XKSA1
DISTI # 31046432		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 230000mW 3-Pin(3+Tab) TO-247 Tube202
  • 1000:$2.1770
  • 500:$2.5370
  • 100:$3.0190
  • 10:$3.4830
  • 3:$4.4913
IKW40N65WR5XKSA1
DISTI # 26151796		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 230000mW 3-Pin(3+Tab) TO-247 Tube186
  • 5000:$1.9701
  • 2500:$2.0493
  • 1000:$2.1582
  • 500:$2.5542
  • 250:$2.8512
  • 100:$2.9997
  • 10:$3.4650
IKW40N65WR5XKSA1
DISTI # IKW40N65WR5XKSA1-ND		Infineon Technologies AGIGBT TRENCH 650V 80A TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		74In Stock
  • 2640:$2.1728
  • 720:$2.7051
  • 240:$3.1777
  • 25:$3.6668
  • 10:$3.8780
  • 1:$4.3200
IKW40N65WR5XKSA1
DISTI # V99:2348_06378269		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 230000mW 3-Pin(3+Tab) TO-247 Tube202
  • 1000:$2.1770
  • 500:$2.5370
  • 100:$3.0190
  • 10:$3.4830
  • 1:$4.4913
IKW40N65WR5XKSA1
DISTI # V36:1790_06378269		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 230000mW 3-Pin(3+Tab) TO-247 Tube0
  • 1:$2.5867
IKW40N65WR5XKSA1
DISTI # IKW40N65WR5XKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: IKW40N65WR5XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
    IKW40N65WR5XKSA1
    DISTI # IKW40N65WR5    		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube (Alt: IKW40N65WR5)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube    		Asia - 0
      IKW40N65WR5XKSA1
      DISTI # SP001174974      		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube (Alt: SP001174974)
      RoHS: Compliant
      Min Qty: 1
      Container: Tube      		Europe - 0
      • 1000:€1.5900
      • 500:€1.6900
      • 50:€1.7900
      • 100:€1.7900
      • 25:€1.8900
      • 10:€1.9900
      • 1:€2.1900
      IKW40N65WR5XKSA1
      DISTI # 34AC1633      		Infineon Technologies AGIGBT, SINGLE, 650V, 80A, TO-247,DC Collector Current:80A,Collector Emitter Saturation Voltage Vce(on):1.4V,Power Dissipation Pd:230W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes110
      • 500:$2.6100
      • 250:$2.9100
      • 100:$3.0600
      • 50:$3.2200
      • 25:$3.3800
      • 10:$3.5400
      • 1:$4.1500
      IKW40N65WR5XKSA1
      DISTI # 726-IKW40N65WR5XKSA1      		Infineon Technologies AGIGBT Transistors The reverse conducting TRENCHSTOP 5 WR5 IGBT was specifically optimized for full rated hard switching turn off typically found in Welding inverter application. Excellent price/performance ratio of WR5 IGBT allows access to the high performance techno
      RoHS: Compliant      		246
      • 1:$4.1100
      • 10:$3.5000
      • 100:$3.0300
      • 250:$2.8800
      • 500:$2.5800
      IKW40N65WR5XKSA1
      DISTI # 1338573      		Infineon Technologies AGIGBT 650V 40A REVERSE CONDUCTING TO-247, TU202
      • 480:£1.4470
      • 240:£1.5360
      IKW40N65WR5XKSA1
      DISTI # 2781033      		Infineon Technologies AGIGBT, SINGLE, 650V, 80A, TO-247
      RoHS: Compliant      		100
      • 1000:$2.9300
      • 500:$2.9900
      • 250:$3.1500
      • 100:$3.3400
      • 10:$3.7600
      • 1:$4.0300
      IKW40N65WR5XKSA1
      DISTI # 2781033      		Infineon Technologies AGIGBT, SINGLE, 650V, 80A, TO-247100
      • 500:£1.9900
      • 250:£2.2200
      • 100:£2.3400
      • 10:£2.7000
      • 1:£3.5500
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      Mfr.#: 2-1718324-1

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      Disponibilidad
      Valores:
      246
      En orden:
      2229
      Ingrese la cantidad:
      El precio actual de IKW40N65WR5XKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      4,11 US$
      4,11 US$
      10
      3,50 US$
      35,00 US$
      100
      3,03 US$
      303,00 US$
      250
      2,88 US$
      720,00 US$
      500
      2,58 US$
      1 290,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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