FDL100N50F

FDL100N50F
Mfr. #:
FDL100N50F
Fabricante:
ON Semiconductor
Descripción:
MOSFET N-CH 500V 100A TO-264
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDL100N50F Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Fairchild Semiconductor
categoria de producto
FET - Single
Serie
UniFET
embalaje
Tubo
Unidad de peso
0.238311 oz
Estilo de montaje
A través del orificio
Paquete-Estuche
TO-264-3, TO-264AA
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
A través del orificio
Número de canales
1 Channel
Paquete de dispositivo de proveedor
TO-264
Configuración
Único
Tipo FET
Canal N MOSFET, óxido metálico
Potencia máxima
2500W
Tipo transistor
1 N-Channel
Drenaje-a-fuente-voltaje-Vdss
500V
Entrada-Capacitancia-Ciss-Vds
12000pF @ 25V
Función FET
Estándar
Corriente-Continuo-Drenaje-Id-25 ° C
100A (Tc)
Rds-On-Max-Id-Vgs
55 mOhm @ 50A, 10V
Vgs-th-Max-Id
5V @ 250μA
Puerta-Carga-Qg-Vgs
238nC @ 10V
Disipación de potencia Pd
2.5 kW
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
105 ns
Hora de levantarse
186 ns
Vgs-Puerta-Fuente-Voltaje
30 V
Id-corriente-de-drenaje-continua
100 A
Vds-Drain-Source-Breakdown-Voltage
500 V
Resistencia a la fuente de desagüe de Rds
43 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
202 ns
Tiempo de retardo de encendido típico
63 ns
Transconductancia directa-Mín.
95 s
Modo de canal
Mejora
Tags
FDL10, FDL1, FDL
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, UniFETTM, FRFET®, 500 V, 100 A, 55 mΩ, TO-264
*** Source Electronics
Trans MOSFET N-CH 500V 100A 3-Pin(3+Tab) TO-264AA Tube / MOSFET N-CH 500V 100A TO-264
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Parte # Mfg. Descripción Valores Precio
FDL100N50F
DISTI # C1S541901537904
ON SemiconductorMOSFETs
RoHS: Compliant
413
  • 375:$8.2200
FDL100N50F
DISTI # FDL100N50F-ND
ON SemiconductorMOSFET N-CH 500V 100A TO-264
RoHS: Compliant
Min Qty: 1
Container: Tube
881In Stock
  • 375:$12.6847
  • 10:$16.3670
  • 1:$18.0000
FDL100N50F
DISTI # FDL100N50F
ON SemiconductorTrans MOSFET N-CH 500V 100A 3-Pin(3+Tab) TO-264AA - Rail/Tube (Alt: FDL100N50F)
RoHS: Compliant
Min Qty: 1
Container: Tube
Americas - 112
  • 1:$8.6900
  • 10:$8.6900
  • 25:$8.6900
  • 50:$8.6900
  • 100:$8.6900
  • 500:$7.9900
  • 1000:$7.8900
FDL100N50F
DISTI # 31Y1379
ON SemiconductorMOSFET, N-CH, 500V, 100A, TO-264AA-3,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:500V,On Resistance Rds(on):0.043ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,MSL:- RoHS Compliant: Yes310
  • 1:$15.6200
  • 10:$14.3600
  • 25:$13.7700
  • 50:$12.9500
  • 100:$12.1300
  • 250:$11.5400
  • 500:$10.7900
FDL100N50F
DISTI # 512-FDL100N50F
ON SemiconductorMOSFET UniFET 500V
RoHS: Compliant
836
  • 1:$15.6200
  • 10:$14.3600
  • 25:$13.7700
  • 100:$12.1300
  • 250:$11.5400
  • 500:$10.7900
FDL100N50FFairchild Semiconductor CorporationPower Field-Effect Transistor, 100A I(D), 500V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
RoHS: Compliant
2570
  • 1000:$9.7400
  • 500:$10.2500
  • 100:$10.6700
  • 25:$11.1300
  • 1:$11.9800
FDL100N50F
DISTI # 7599128
ON SemiconductorMOSFET N-CH 500V 100A UNIFET TO264AA, EA64
  • 1:£13.1900
  • 13:£12.1300
FDL100N50F
DISTI # 7599128P
ON SemiconductorMOSFET N-CH 500V 100A UNIFET TO264AA, TU446
  • 13:£12.1300
FDL100N50F
DISTI # 2453857
ON SemiconductorMOSFET, N-CH, 500V, 100A, TO-264AA-3
RoHS: Compliant
602
  • 1:£12.2300
  • 5:£11.8300
  • 10:£10.4200
  • 50:£9.8100
  • 100:£9.1900
FDL100N50F
DISTI # 2453857
ON SemiconductorMOSFET, N-CH, 500V, 100A, TO-264AA-3
RoHS: Compliant
310
  • 1:$24.7200
  • 10:$22.7300
  • 25:$21.7900
  • 100:$19.2000
  • 250:$18.2600
  • 500:$17.0800
  • 1000:$15.6700
Imagen Parte # Descripción
FDL100N50F

Mfr.#: FDL100N50F

OMO.#: OMO-FDL100N50F

MOSFET UniFET 500V
FDL100N50

Mfr.#: FDL100N50

OMO.#: OMO-FDL100N50-1190

Nuevo y original
FDL100N50F

Mfr.#: FDL100N50F

OMO.#: OMO-FDL100N50F-ON-SEMICONDUCTOR

MOSFET N-CH 500V 100A TO-264
FDL100N50F/IXFK98N50P3

Mfr.#: FDL100N50F/IXFK98N50P3

OMO.#: OMO-FDL100N50F-IXFK98N50P3-1190

Nuevo y original
Disponibilidad
Valores:
Available
En orden:
4000
Ingrese la cantidad:
El precio actual de FDL100N50F es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
11,84 US$
11,84 US$
10
11,24 US$
112,43 US$
100
10,65 US$
1 065,15 US$
500
10,06 US$
5 029,90 US$
1000
9,47 US$
9 468,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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