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IXFT18N100Q3

IXFT18N100Q3
Mfr. #:
IXFT18N100Q3
Fabricante:
Littelfuse
Descripción:
Darlington Transistors MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFT18N100Q3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IXFT18N100Q3 más información
Atributo del producto
Valor de atributo
Fabricante
IXYS
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
IXFT18N100
embalaje
Tubo
Unidad de peso
0.229281 oz
Estilo de montaje
SMD / SMT
Nombre comercial
HyperFET
Paquete-Estuche
TO-268-2
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
830 W
Temperatura máxima de funcionamiento
+ 150 C
Otoño
13 ns
Hora de levantarse
32 ns
Vgs-Puerta-Fuente-Voltaje
30 V
Id-corriente-de-drenaje-continua
18 A
Vds-Drain-Source-Breakdown-Voltage
1000 V
Resistencia a la fuente de desagüe de Rds
660 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
40 ns
Tiempo de retardo de encendido típico
37 nS
Qg-Gate-Charge
90 nC
Transconductancia directa-Mín.
16 S
Tags
IXFT18, IXFT1, IXFT, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
HiPerFET Power MOSFETs - EXPANSION
IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances.Learn more.These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.View all HiPerFET MOSFETs.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Parte # Mfg. Descripción Valores Precio
IXFT18N100Q3
DISTI # IXFT18N100Q3-ND		IXYS CorporationMOSFET N-CH 1000V 18A TO-268
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$14.5707
IXFT18N100Q3
DISTI # 747-IXFT18N100Q3		IXYS CorporationMOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A
RoHS: Compliant		0
  • 1:$18.1100
  • 10:$16.4700
  • 25:$15.2300
  • 50:$14.0100
  • 100:$13.6700
  • 250:$12.5300
  • 500:$11.3700
IXFT18N100Q3
DISTI # 8011461P		IXYS CorporationMOSFET N-CH 1000V 18A Q3 HIPERFET TO268, TU24
  • 5:£10.4800
  • 10:£10.0100
  • 25:£9.6600
IXFT18N100Q3
DISTI # 2674768		IXYS CorporationMOSFET, N-CH, 1KV, 18A, TO-268
RoHS: Compliant		0
  • 1:£14.2800
  • 5:£14.1500
  • 10:£11.4000
  • 50:£10.9500
  • 100:£10.6800
Imagen Parte # Descripción
IXFT18N100Q3

Mfr.#: IXFT18N100Q3

OMO.#: OMO-IXFT18N100Q3

 MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A
IXFT180N20X3HV

Mfr.#: IXFT180N20X3HV

OMO.#: OMO-IXFT180N20X3HV

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IXFT18N90P

Mfr.#: IXFT18N90P

OMO.#: OMO-IXFT18N90P

 MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
IXFT180N20X3HV

Mfr.#: IXFT180N20X3HV

OMO.#: OMO-IXFT180N20X3HV-IXYS-CORPORATION

 200V/180A ULTRA JUNCTION X3-CLAS
IXFT1874 TR

Mfr.#: IXFT1874 TR

OMO.#: OMO-IXFT1874-TR-IXYS-CORPORATION

 MOSFET N-CH TO268
IXFT18N100Q3

Mfr.#: IXFT18N100Q3

OMO.#: OMO-IXFT18N100Q3-IXYS-CORPORATION

 Darlington Transistors MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A
IXFT18N90P

Mfr.#: IXFT18N90P

OMO.#: OMO-IXFT18N90P-IXYS-CORPORATION

 Darlington Transistors MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
Disponibilidad
Valores:
Available
En orden:
4500
Ingrese la cantidad:
El precio actual de IXFT18N100Q3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
17,06 US$
17,06 US$
10
16,20 US$
162,02 US$
100
15,35 US$
1 534,95 US$
500
14,50 US$
7 248,40 US$
1000
13,64 US$
13 644,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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