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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| SQ2361EES-T1-GE3 DISTI # 65T6737 | Vishay Intertechnologies | MOSFET, P CHANNEL, -60V, -2.5A, SOT-23-3, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-2.5A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.115ohm,Rds(on) Test Voltage Vgs:-10V,No. of Pins:3Pins RoHS Compliant: Yes | 0 | |
| SQ2361EES-T1-GE3 DISTI # 91T5917 | Vishay Intertechnologies | MOSFET, P CHANNEL, -60V, -2.5A, SOT-23-3,Transistor Polarity:P Channel,Continuous Drain Current Id:-2.5A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.115ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V RoHS Compliant: Yes | 0 | |
| SQ2361EES-T1-GE3 DISTI # 70459601 | Vishay Siliconix | 60V 2.5A 2W P.CH 150mohm @ 10V RoHS: Compliant | 0 |
|
| SQ2361EES-T1-GE3 DISTI # 781-SQ2361EES-T1-GE3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 78-SQ2361AEES-T1_GE3 RoHS: Compliant | 0 | |
| SQ2361EES-T1-GE3 | Vishay Siliconix | 2500MA, 60V, P-CHANNEL, SI, SMALL SIGNAL, MOSFET, TO-236 | 6000 |
|
| SQ2361EES-T1-GE3 | Vishay Intertechnologies | 9000 | ||
| SQ2361EEST1GE3 | Vishay Intertechnologies | RoHS: Compliant | 3000 |
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: SQ2361EES-T1-GE3 OMO.#: OMO-SQ2361EES-T1-GE3 |
MOSFET RECOMMENDED ALT 78-SQ2361AEES-T1_GE3 |
|
Mfr.#: SQ2361EES OMO.#: OMO-SQ2361EES-1190 |
Nuevo y original |
|
|
Mfr.#: SQ2361EES-T1-E3 OMO.#: OMO-SQ2361EES-T1-E3-1190 |
Nuevo y original |
|
Mfr.#: SQ2361EES-T1-GE3 OMO.#: OMO-SQ2361EES-T1-GE3-VISHAY |
MOSFET P-CH 60V 2.5A SOT23 |
|
|
Mfr.#: SQ2361EES-T1_GE3 OMO.#: OMO-SQ2361EES-T1-GE3-1190 |
Nuevo y original |