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STGW35NB60SD

STGW35NB60SD
Mfr. #:
STGW35NB60SD
Fabricante:
STMicroelectronics
Descripción:
IGBT Transistors N Ch 35A 600V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STGW35NB60SD Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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HTML Datasheet:
STGW35NB60SD DatasheetSTGW35NB60SD Datasheet (P4-P6)STGW35NB60SD Datasheet (P7-P9)STGW35NB60SD Datasheet (P10-P12)STGW35NB60SD Datasheet (P13)
ECAD Model:
Más información:
STGW35NB60SD más información STGW35NB60SD Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
600 V
Voltaje máximo del emisor de puerta:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
STGW35NB60SD
Embalaje:
Tubo
Corriente continua de colector Ic Max:
70 A
Altura:
20.15 mm
Longitud:
15.75 mm
Ancho:
5.15 mm
Marca:
STMicroelectronics
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
600
Subcategoría:
IGBT
Nombre comercial:
PowerMESH
Unidad de peso:
1.340411 oz
Tags
STGW35NB, STGW35N, STGW35, STGW3, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 70A 200000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
STGW35 Series 600 V 70 A Through Hole N-Channel Silicon IGBT - TO-247-3
***ment14 APAC
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:70A; Package / Case:TO-247; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:250A; Rise Time:70ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ical
Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-247 Tube
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AC
***el Electronic
STMICROELECTRONICS STGW30NC60WD IGBT Single Transistor, 60 A, 2.5 V, 200 W, 600 V, TO-247, 3 Pins
***ser
IGBTs Insulated Gate Bipolar Transistor PowerMESH" IGBT
***nell
IGBT, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Te
***(Formerly Allied Electronics)
STGW30NC60WD,IGBT Ultrafast 600V 30A
*** Electronic Components
IGBT Transistors PowerMESH" IGBT
***p One Stop Global
Trans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail
***ment14 APAC
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:70A; Current Temperature:25°C; Device Marking:HGTG20N60A4D; Fall Time Typ:32ns; Fall Time tf:32ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:290W; Power Dissipation Pd:290W; Power Dissipation Pd:290W; Pulsed Current Icm:280A; Rise Time:12ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***rchild Semiconductor
The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372.This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.
***p One Stop Global
Trans IGBT Chip N-CH 600V 80A 250000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
STGW Series Ultra Fast Free Wheeling Diode Through Hole IGBT - TO-247-3
***nell
IGBT, TO-247; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Te
***p One Stop Global
Trans IGBT Chip N-CH 600V 70A 250000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
STGW45HF Series 600 V 45 A Ultra Fast IGBT Flange Mount - TO-247
***icroelectronics
45 A, 600 V ultrafast IGBT with ultrafast diode
***nell
IGBT, SINGLE, 600V, 70A, TO-247; DC Collector Current: 70A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: HF Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
***ark
IGBT Single Transistor, 60 A, 1.9 V, 208 W, 600 V, TO-247, 3 RoHS Compliant: Yes
***ical
Trans IGBT Chip N=-CH 600V 60A 208000mW 3-Pin(3+Tab) TO-247 Rail
***ource
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode60A, 600V, UFS N
***nell
IGBT,N CH,600V,30A,TO-247.; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.9V; Power Dissipation Pd: 208W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins
***rchild Semiconductor
The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49170. The diode used in anti-parallel with the IGBT is the development type TA49053.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly Developmental Type TA49172.
***ical
Trans IGBT Chip N-CH 600V 70A 290000mW 3-Pin(3+Tab) TO-247 Rail
***ark
Insulated-Gate Bipolar Transistor (IGBT); Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:70A; Collector Emitter Saturation Voltage, Vce(sat):1.8V; Power Dissipation, Pd:290W ;RoHS Compliant: Yes
***rchild Semiconductor
The HGTG20N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS, welder and induction heating.
***ment14 APAC
IGBT, N, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Alternate Case Style:SOT-249; Current Ic Continuous a Max:70A; Current Temperature:25°C; Device Marking:HGTG20N60A4; Fall Time tf:32ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Pin Format:GCE; Power Dissipation Max:290W; Power Dissipation Pd:290W; Power Dissipation Pd:290W; Power Dissipation Ptot Max:290W; Pulsed Current Icm:280A; Rise Time:12ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
Parte # Mfg. Descripción Valores Precio
STGW35NB60SD
DISTI # 497-16202-5-ND		STMicroelectronicsIGBT 600V 70A 200W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1020:$3.4860
  • 510:$4.0593
  • 120:$4.6988
  • 30:$5.3603
  • 1:$6.2400
STGW35NB60SD
DISTI # STGW35NB60SD		STMicroelectronicsTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Tube (Alt: STGW35NB60SD)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 138
  • 1:€4.6900
  • 10:€3.9900
  • 25:€3.9900
  • 50:€3.9900
  • 100:€3.2900
  • 500:€2.8900
  • 1000:€2.4900
STGW35NB60SD
DISTI # STGW35NB60SD		STMicroelectronicsTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: STGW35NB60SD)
RoHS: Compliant
Min Qty: 600
Container: Tube		Americas - 0
  • 600:$3.0900
  • 1200:$2.9900
  • 2400:$2.7900
  • 3600:$2.6900
  • 6000:$2.5900
STGW35NB60SD
DISTI # 511-STGW35NB60SD		STMicroelectronicsIGBT Transistors N Ch 35A 600V
RoHS: Compliant		0
  • 1:$5.5500
  • 10:$4.7200
  • 100:$4.0900
  • 250:$3.8800
  • 500:$3.4800
  • 1000:$2.9400
STGW35NB60SD
DISTI # STGW35NB60SD		STMicroelectronicsTransistor: IGBT,600V,35A,200W,TO247-348
  • 1:$4.9500
  • 3:$4.2600
  • 10:$3.4300
  • 30:$3.0800
STGW35NB60SD
DISTI # 1293658		STMicroelectronicsIGBT, TO-247
RoHS: Compliant		18
  • 2500:$4.4400
  • 1000:$4.6600
  • 500:$5.5300
  • 250:$6.1600
  • 100:$6.4900
  • 10:$7.4900
  • 1:$8.8000
STGW35NB60SD
DISTI # 1293658		STMicroelectronicsIGBT, TO-247
RoHS: Compliant		18
  • 100:£3.6800
  • 10:£4.2500
  • 1:£5.5400
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Disponibilidad
Valores:
Available
En orden:
1984
Ingrese la cantidad:
El precio actual de STGW35NB60SD es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
5,55 US$
5,55 US$
10
4,72 US$
47,20 US$
100
4,09 US$
409,00 US$
250
3,88 US$
970,00 US$
500
3,48 US$
1 740,00 US$
1000
2,94 US$
2 940,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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