SI3460BDV-T1-E3

SI3460BDV-T1-E3
Mfr. #:
SI3460BDV-T1-E3
Fabricante:
Vishay
Descripción:
IGBT Transistors MOSFET 20V 8.0A 3.5W
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI3460BDV-T1-E3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
SI3460BDV-T1-E3 más información
Atributo del producto
Valor de atributo
Fabricante
Vishay Siliconix
categoria de producto
FET - Single
Serie
TrincheraFETR
embalaje
Embalaje alternativo de Digi-ReelR
Alias ​​de parte
SI3460BDV-E3
Unidad de peso
0.000705 oz
Estilo de montaje
SMD / SMT
Nombre comercial
TrenchFET
Paquete-Estuche
SOT-23-6 Thin, TSOT-23-6
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
1 Channel
Paquete de dispositivo de proveedor
6-TSOP
Configuración
Único
Tipo FET
Canal N MOSFET, óxido metálico
Potencia máxima
3.5W
Tipo transistor
1 N-Channel
Drenaje-a-fuente-voltaje-Vdss
20V
Entrada-Capacitancia-Ciss-Vds
860pF @ 10V
Función FET
Estándar
Corriente-Continuo-Drenaje-Id-25 ° C
8A (Tc)
Rds-On-Max-Id-Vgs
27 mOhm @ 5.1A, 4.5V
Vgs-th-Max-Id
1V @ 250μA
Puerta-Carga-Qg-Vgs
24nC @ 8V
Disipación de potencia Pd
2 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
6 ns 5 ns
Hora de levantarse
60 ns 15 ns
Vgs-Puerta-Fuente-Voltaje
8 V
Id-corriente-de-drenaje-continua
6.7 A
Vds-Drain-Source-Breakdown-Voltage
20 V
Resistencia a la fuente de desagüe de Rds
27 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
25 ns
Tiempo de retardo de encendido típico
7 ns 5 ns
Modo de canal
Mejora
Tags
SI3460B, SI3460, SI346, SI34, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Parte # Mfg. Descripción Valores Precio
SI3460BDV-T1-E3
DISTI # V72:2272_09216670
Vishay IntertechnologiesTrans MOSFET N-CH Si 20V 6.7A 6-Pin TSOP T/R
RoHS: Compliant
3143
  • 3000:$0.3199
  • 1000:$0.3268
  • 500:$0.3826
  • 250:$0.4720
  • 100:$0.4772
  • 25:$0.5950
  • 10:$0.6020
  • 1:$0.7147
SI3460BDV-T1-E3
DISTI # SI3460BDV-T1-E3CT-ND
Vishay SiliconixMOSFET N-CH 20V 8A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
31388In Stock
  • 1000:$0.4169
  • 500:$0.5212
  • 100:$0.7036
  • 10:$0.9120
  • 1:$1.0400
SI3460BDV-T1-E3
DISTI # SI3460BDV-T1-E3DKR-ND
Vishay SiliconixMOSFET N-CH 20V 8A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
31388In Stock
  • 1000:$0.4169
  • 500:$0.5212
  • 100:$0.7036
  • 10:$0.9120
  • 1:$1.0400
SI3460BDV-T1-E3
DISTI # SI3460BDV-T1-E3TR-ND
Vishay SiliconixMOSFET N-CH 20V 8A 6-TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
30000In Stock
  • 3000:$0.3669
SI3460BDV-T1-E3
DISTI # 25790201
Vishay IntertechnologiesTrans MOSFET N-CH Si 20V 6.7A 6-Pin TSOP T/R
RoHS: Compliant
3143
  • 3000:$0.3199
  • 1000:$0.3268
  • 500:$0.3826
  • 250:$0.4720
  • 100:$0.4772
  • 25:$0.5950
  • 20:$0.6020
SI3460BDV-T1-E3
DISTI # SI3460BDV-T1-E3
Vishay IntertechnologiesTrans MOSFET N-CH 20V 6.7A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3460BDV-T1-E3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 24000
  • 3000:$0.3149
  • 6000:$0.3059
  • 12000:$0.2979
  • 18000:$0.2909
  • 30000:$0.2829
SI3460BDV-T1-E3
DISTI # SI3460BDV-T1-E3
Vishay IntertechnologiesTrans MOSFET N-CH 20V 6.7A 6-Pin TSOP T/R - Cut TR (SOS) (Alt: SI3460BDV-T1-E3)
RoHS: Not Compliant
Min Qty: 1
Container: Cut Tape
Americas - 25
  • 1:$0.6159
  • 30:$0.5769
  • 75:$0.5009
  • 150:$0.4599
  • 375:$0.3999
  • 750:$0.3439
  • 1500:$0.3429
SI3460BDV-T1-E3Vishay IntertechnologiesTrans MOSFET N-CH 20V 6.7A 6-Pin TSOP T/R - Tape and Reel
RoHS: Compliant
Container: Reel
Americas - 0
    SI3460BDV-T1-E3
    DISTI # 75M5452
    Vishay IntertechnologiesN CHANNEL MOSFET, 20V, 8A, TSOP,Transistor Polarity:N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:8V,Threshold Voltage Vgs:1V,No. of Pins:6Pins RoHS Compliant: Yes0
    • 1:$0.9200
    • 10:$0.7340
    • 25:$0.6750
    • 50:$0.6160
    • 100:$0.5570
    • 500:$0.4600
    • 1000:$0.3680
    SI3460BDV-T1-E3
    DISTI # 85W0179
    Vishay IntertechnologiesN CHANNEL MOSFET, 20V, 8A, TSOP, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:8V,Threshold Voltage Vgs:1V RoHS Compliant: Yes0
    • 1:$0.3340
    • 3000:$0.3340
    SI3460BDV-T1-E3.
    DISTI # 16AC0254
    Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:8V,Threshold Voltage Vgs:1V,Power Dissipation Pd:2W,No. of Pins:6Pins RoHS Compliant: No24000
    • 1:$0.3340
    • 3000:$0.3340
    SI3460BDV-T1-E3
    DISTI # 70026203
    Vishay SiliconixN-CHANNEL 20-V (D-S) MOSFET
    RoHS: Compliant
    0
    • 3000:$0.3770
    • 6000:$0.3570
    • 9000:$0.3160
    SI3460BDV-T1-E3Vishay IntertechnologiesSingle N-Channel 20 V 0.027 Ohms Surface Mount Power Mosfet - TSOP-6
    RoHS: Compliant
    12000Reel
    • 3000:$0.5100
    SI3460BDV-T1-E3
    DISTI # 781-SI3460BDV-E3
    Vishay IntertechnologiesMOSFET 20V 8.0A 3.5W
    RoHS: Compliant
    4970
    • 1:$0.9200
    • 10:$0.7340
    • 100:$0.5570
    • 500:$0.4600
    • 1000:$0.3680
    • 3000:$0.3340
    SI3460BDV-T1-E3VISIL 221
      SI3460BDV-T1-E3Vishay IntertechnologiesMOSFET 20V 8.0A 3.5W
      RoHS: Compliant
      Americas - 3000
        SI3460BDV-T1-E3
        DISTI # C1S803601192530
        Vishay IntertechnologiesMOSFETs
        RoHS: Compliant
        3143
        • 250:$0.4720
        • 100:$0.4772
        • 25:$0.5950
        • 10:$0.6020
        Imagen Parte # Descripción
        SI3460BDV-T1-E3

        Mfr.#: SI3460BDV-T1-E3

        OMO.#: OMO-SI3460BDV-T1-E3

        MOSFET 20V 8.0A 3.5W
        SI3460BDV-T1-GE3

        Mfr.#: SI3460BDV-T1-GE3

        OMO.#: OMO-SI3460BDV-T1-GE3

        MOSFET 20V 8.0A 3.5W 27mohm @ 4.5V
        SI3460BDV-T1-E3

        Mfr.#: SI3460BDV-T1-E3

        OMO.#: OMO-SI3460BDV-T1-E3-VISHAY

        IGBT Transistors MOSFET 20V 8.0A 3.5W
        SI3460BDV-T1-E312+

        Mfr.#: SI3460BDV-T1-E312+

        OMO.#: OMO-SI3460BDV-T1-E312--1190

        Nuevo y original
        SI3460BDV-T1-GE3

        Mfr.#: SI3460BDV-T1-GE3

        OMO.#: OMO-SI3460BDV-T1-GE3-VISHAY

        MOSFET N-CH 20V 8A 6-TSOP
        Disponibilidad
        Valores:
        Available
        En orden:
        1000
        Ingrese la cantidad:
        El precio actual de SI3460BDV-T1-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        0,42 US$
        0,42 US$
        10
        0,40 US$
        4,03 US$
        100
        0,38 US$
        38,19 US$
        500
        0,36 US$
        180,35 US$
        1000
        0,34 US$
        339,50 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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