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Parte # | Mfg. | Descripción | Valores | Precio |
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SI3460BDV-T1-E3 DISTI # V72:2272_09216670 | Vishay Intertechnologies | Trans MOSFET N-CH Si 20V 6.7A 6-Pin TSOP T/R RoHS: Compliant | 3143 |
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SI3460BDV-T1-E3 DISTI # SI3460BDV-T1-E3CT-ND | Vishay Siliconix | MOSFET N-CH 20V 8A 6-TSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 31388In Stock |
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SI3460BDV-T1-E3 DISTI # SI3460BDV-T1-E3DKR-ND | Vishay Siliconix | MOSFET N-CH 20V 8A 6-TSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 31388In Stock |
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SI3460BDV-T1-E3 DISTI # SI3460BDV-T1-E3TR-ND | Vishay Siliconix | MOSFET N-CH 20V 8A 6-TSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | 30000In Stock |
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SI3460BDV-T1-E3 DISTI # 25790201 | Vishay Intertechnologies | Trans MOSFET N-CH Si 20V 6.7A 6-Pin TSOP T/R RoHS: Compliant | 3143 |
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SI3460BDV-T1-E3 DISTI # SI3460BDV-T1-E3 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 6.7A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3460BDV-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 24000 |
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SI3460BDV-T1-E3 DISTI # SI3460BDV-T1-E3 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 6.7A 6-Pin TSOP T/R - Cut TR (SOS) (Alt: SI3460BDV-T1-E3) RoHS: Not Compliant Min Qty: 1 Container: Cut Tape | Americas - 25 |
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SI3460BDV-T1-E3 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 6.7A 6-Pin TSOP T/R - Tape and Reel RoHS: Compliant Container: Reel | Americas - 0 | |
SI3460BDV-T1-E3 DISTI # 75M5452 | Vishay Intertechnologies | N CHANNEL MOSFET, 20V, 8A, TSOP,Transistor Polarity:N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:8V,Threshold Voltage Vgs:1V,No. of Pins:6Pins RoHS Compliant: Yes | 0 |
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SI3460BDV-T1-E3 DISTI # 85W0179 | Vishay Intertechnologies | N CHANNEL MOSFET, 20V, 8A, TSOP, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:8V,Threshold Voltage Vgs:1V RoHS Compliant: Yes | 0 |
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SI3460BDV-T1-E3. DISTI # 16AC0254 | Vishay Intertechnologies | Transistor Polarity:N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:8V,Threshold Voltage Vgs:1V,Power Dissipation Pd:2W,No. of Pins:6Pins RoHS Compliant: No | 24000 |
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SI3460BDV-T1-E3 DISTI # 70026203 | Vishay Siliconix | N-CHANNEL 20-V (D-S) MOSFET RoHS: Compliant | 0 |
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SI3460BDV-T1-E3 | Vishay Intertechnologies | Single N-Channel 20 V 0.027 Ohms Surface Mount Power Mosfet - TSOP-6 RoHS: Compliant | 12000Reel |
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SI3460BDV-T1-E3 DISTI # 781-SI3460BDV-E3 | Vishay Intertechnologies | MOSFET 20V 8.0A 3.5W RoHS: Compliant | 4970 |
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SI3460BDV-T1-E3 | VISIL | 221 | ||
SI3460BDV-T1-E3 | Vishay Intertechnologies | MOSFET 20V 8.0A 3.5W RoHS: Compliant | Americas - 3000 | |
SI3460BDV-T1-E3 DISTI # C1S803601192530 | Vishay Intertechnologies | MOSFETs RoHS: Compliant | 3143 |
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Imagen | Parte # | Descripción |
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Mfr.#: SI3460BDV-T1-E3 OMO.#: OMO-SI3460BDV-T1-E3 |
MOSFET 20V 8.0A 3.5W | |
Mfr.#: SI3460BDV-T1-GE3 OMO.#: OMO-SI3460BDV-T1-GE3 |
MOSFET 20V 8.0A 3.5W 27mohm @ 4.5V | |
Mfr.#: SI3460BDV-T1-E3 OMO.#: OMO-SI3460BDV-T1-E3-VISHAY |
IGBT Transistors MOSFET 20V 8.0A 3.5W | |
Mfr.#: SI3460BDV-T1-E312+ OMO.#: OMO-SI3460BDV-T1-E312--1190 |
Nuevo y original | |
Mfr.#: SI3460BDV-T1-GE3 OMO.#: OMO-SI3460BDV-T1-GE3-VISHAY |
MOSFET N-CH 20V 8A 6-TSOP |