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DMG6898LSD-13

DMG6898LSD-13
Mfr. #:
DMG6898LSD-13
Fabricante:
Diodes Incorporated
Descripción:
MOSFET MOSFET N-CHAN
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
DMG6898LSD-13 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
DMG6898LSD-13 DatasheetDMG6898LSD-13 Datasheet (P4-P6)
ECAD Model:
Más información:
DMG6898LSD-13 más información
Atributo del producto
Valor de atributo
Fabricante:
Diodos incorporados
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SO-8
Número de canales:
2 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
20 V
Id - Corriente de drenaje continua:
9.5 A
Rds On - Resistencia de la fuente de drenaje:
11 mOhms
Vgs th - Voltaje umbral puerta-fuente:
500 mV
Vgs - Voltaje puerta-fuente:
12 V
Qg - Carga de puerta:
26 nC, 26 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
1.28 W
Configuración:
Doble
Modo de canal:
Mejora
Embalaje:
Carrete
Producto:
Pequeña señal MOSFET
Serie:
DMG6898
Tipo de transistor:
2 N-Channel
Marca:
Diodos incorporados
Otoño:
12.33 ns, 12.33 ns
Tipo de producto:
MOSFET
Hora de levantarse:
12.49 ns, 12.49 ns
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
35.89 ns, 35.89 ns
Tiempo típico de retardo de encendido:
11.67 ns, 11.67 ns
Unidad de peso:
0.002610 oz
Tags
DMG6898LSD, DMG68, DMG6, DMG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET Array Dual N-CH 20V 9.5A 8-Pin SOIC T/R
***ure Electronics
DMG6898LSD Series 20 V 9.5 A Dual N-Channel Enhancement Mode Mosfet - SOIC-8
***ark
Mosfet, Dual, N-Ch, 20V, 9.5A Rohs Compliant: Yes |Diodes Inc. DMG6898LSD-13
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SO-8 Polarity: N/N Variants: Enhancement mode Power dissipation: 1.28 W
***(Formerly Allied Electronics)
20V N-Channel Enhancement MOSFET SOIC8 | Diodes Inc DMN2028USS-13
***ment14 APAC
MOSFET,N CH,20V,9.8A,SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:9.8A; Source Voltage Vds:20V; On Resistance
***ark
Mosfet,n Channel,20V,7.3A,so8; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:9.8A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Diodes Inc. DMN2028USS-13
***nell
MOSFET,N CH,20V,9.8A,SO8; Transistor Polarity: N Channel; Continuous Drain Current Id: 9.8A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 1.56W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 9.8A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Voltage Vgs Max: 12V
***(Formerly Allied Electronics)
IRF8910PBF Dual N-channel MOSFET Transistor, 10 A, 20 V, 8-Pin SOIC | Infineon IRF8910PBF
***Yang
Transistor MOSFET Array Dual N-CH 20V 10A 8-Pin SOIC T/R - Tape and Reel
***ure Electronics
Dual N-Channel 20 V 13.4 mOhm 7.4 nC HEXFET® Power Mosfet - SOIC-8
***SIT Distribution GmbH
Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:10A; On Resistance Rds(On):0.0107Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.55V Rohs Compliant: Yes
***emi
Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 9.4A, 14mΩ
***Yang
Transistor MOSFET Array Dual N-CH 20V 9.4A 8-Pin SOIC T/R - Tape and Reel
***ure Electronics
Dual N-Channel 20 V 14 mOhm PowerTrench Mosfet -SOIC-8
***enic
20V 9.4A 14m´Î@4.5V9.4A 900mW 1.5V@250Ã×A 2 N-Channel SOIC-8_150mil MOSFETs ROHS
***ment14 APAC
MOSFET, NN; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:9.4A; Current Id Max:9.4A; Drain Source Voltage Vds:20V; Module Configuration:Dual; On Resistance Rds(on):14mohm; Package / Case:SO-8; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V
***rchild Semiconductor
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
***itex
Transistor: 2xN-MOSFET; unipolar; 20V; 8A; 0.018ohm; 2W; -55+150 deg.C; SMD; SO8
***ure Electronics
Dual N-Channel 20 V 0.018 Ohm 3.1 W Surface Mount Power Mosfet - SOIC-8
***et
Transistor MOSFET Array Dual N-CH 20V 8A 8-Pin SOIC T/R
***enic
20V 8A 2W 18m´Î@4.5V8.3A 1.5V@250Ã×A 2 N-Channel SOIC-8_150mil MOSFETs ROHS
***ment14 APAC
DUAL N CHANNEL MOSFET, 20V, SOIC; Transi; DUAL N CHANNEL MOSFET, 20V, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:8A; Drain Source Voltage Vds, N Channel:20V; On Resistance Rds(on), N Channel:0.015ohm; Rds(on) Test Voltage Vgs:12V
***ark
Channel Type:dual N Channel; Drain Source Voltage Vds N Channel:20V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:8A; Continuous Drain Current Id P Channel:-; No. Of Pins:8Pins; Product Range:- Rohs Compliant: No
***emi
Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 7.5A, 18mΩ
***Yang
Transistor MOSFET Array Dual N-CH 20V 7.5A 8-Pin SOIC T/R - Tape and Reel
***ure Electronics
Dual N-Channel 20 V 18 mOhm PowerTrench Mosfet - SOIC-8
***enic
20V 7.5A 18m´Î@4.5V7.5A 900mW 1.5V@250Ã×A 2 N-Channel SOIC-8_150mil MOSFETs ROHS
***ical
Trans MOSFET N-CH 20V 7.5A 8-Pin SOIC N T/R
***ment14 APAC
TRANSISTOR, MOSFET; Transistor Polarity:Dual N Channel; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:900mV; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:7.5A; Current Id Max:7.5A; Drain Source Voltage Vds:20V; Module Configuration:Dual; On Resistance Rds(on):18mohm; Package / Case:SO-8; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:900mV; Voltage Vgs Rds on Measurement:4.5V
***rchild Semiconductor
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
DMx Enhancement Mode MOSFETs
Diodes Incorporated DMx series enhancement mode MOSFETs feature low on-resistance and fast switching, making them ideal for high efficiency power management applications. Diodes Incorporated DMx enhancement mode MOSFETs are also optimized for motor control, backlighting, and DC-DC converter applications. Diodes Incorporated DMx series includes complementary dual, complementary pair, P-channel, and N-channel enhancement mode MOSFETs.
Parte # Mfg. Descripción Valores Precio
DMG6898LSD-13
DISTI # V72:2272_06697794		Zetex / Diodes IncTrans MOSFET N-CH 20V 9.5A Automotive 8-Pin SO T/R
RoHS: Compliant		2180
  • 1000:$0.2463
  • 500:$0.2920
  • 250:$0.3432
  • 100:$0.3573
  • 25:$0.4531
  • 10:$0.5537
  • 1:$0.6283
DMG6898LSD-13
DISTI # V36:1790_06697794		Zetex / Diodes IncTrans MOSFET N-CH 20V 9.5A Automotive 8-Pin SO T/R
RoHS: Compliant		0
  • 2500:$0.2097
DMG6898LSD-13
DISTI # DMG6898LSD-13DICT-ND		Diodes IncorporatedMOSFET 2N-CH 20V 9.5A 8SO
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		9500In Stock
  • 1000:$0.2472
  • 500:$0.3090
  • 100:$0.3909
  • 10:$0.5100
  • 1:$0.5800
DMG6898LSD-13
DISTI # DMG6898LSD-13DIDKR-ND		Diodes IncorporatedMOSFET 2N-CH 20V 9.5A 8SO
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		9500In Stock
  • 1000:$0.2472
  • 500:$0.3090
  • 100:$0.3909
  • 10:$0.5100
  • 1:$0.5800
DMG6898LSD-13
DISTI # DMG6898LSD-13DITR-ND		Diodes IncorporatedMOSFET 2N-CH 20V 9.5A 8SO
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		7500In Stock
  • 12500:$0.1995
  • 5000:$0.2025
  • 2500:$0.2175
DMG6898LSD-13
DISTI # 26571827		Zetex / Diodes IncTrans MOSFET N-CH 20V 9.5A Automotive 8-Pin SO T/R
RoHS: Compliant		95000
  • 2500:$0.2250
DMG6898LSD-13
DISTI # 32440315		Zetex / Diodes IncTrans MOSFET N-CH 20V 9.5A Automotive 8-Pin SO T/R
RoHS: Compliant		2180
  • 39:$0.6283
DMG6898LSD-13
DISTI # DMG6898LSD-13		Diodes IncorporatedTrans MOSFET N-CH 20V 9.5A 8-Pin SOIC T/R (Alt: DMG6898LSD-13)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
  • 125000:$0.1667
  • 62500:$0.1711
  • 25000:$0.1757
  • 12500:$0.1781
  • 7500:$0.1831
  • 5000:$0.1912
  • 2500:$0.2000
DMG6898LSD-13
DISTI # DMG6898LSD-13		Diodes IncorporatedTrans MOSFET N-CH 20V 9.5A 8-Pin SOIC T/R (Alt: DMG6898LSD-13)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.1729
  • 15000:€0.1809
  • 10000:€0.1839
  • 5000:€0.1869
  • 2500:€0.1969
DMG6898LSD-13
DISTI # DMG6898LSD-13		Diodes IncorporatedTrans MOSFET N-CH 20V 9.5A 8-Pin SOIC T/R - Tape and Reel (Alt: DMG6898LSD-13)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.1659
  • 15000:$0.1689
  • 10000:$0.1769
  • 5000:$0.1859
  • 2500:$0.1959
DMG6898LSD-13
DISTI # 70438044		Diodes IncorporatedMOSFET N-Channel 20V 9.5A SOIC8
RoHS: Compliant		0
  • 50:$0.4300
  • 250:$0.3700
  • 1250:$0.3400
  • 2500:$0.3100
DMG6898LSD-13
DISTI # 621-DMG6898LSD-13		Diodes IncorporatedMOSFET MOSFET N-CHAN
RoHS: Compliant		7397
  • 1:$0.6700
  • 10:$0.5580
  • 100:$0.3600
  • 1000:$0.2880
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MCH3484-TL-W

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JMK105C6105MV-F

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Disponibilidad
Valores:
Available
En orden:
1990
Ingrese la cantidad:
El precio actual de DMG6898LSD-13 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,67 US$
0,67 US$
10
0,56 US$
5,58 US$
100
0,36 US$
36,00 US$
1000
0,29 US$
288,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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