OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

IPD60R520CP

IPD60R520CP
Mfr. #:
IPD60R520CP
Fabricante:
Rochester Electronics, LLC
Descripción:
IGBT Transistors MOSFET N-Ch 600V 6.8A DPAK-2 CoolMOS CP
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPD60R520CP Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
INFINEON
categoria de producto
FET - Single
Tags
IPD60R520CP, IPD60R5, IPD60R, IPD60, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 600V 6.8A 3-Pin TO-252 T/R
***i-Key
MOSFET N-CH 650V 6.8A TO-252
***ark
MOSFET, N, TO-252; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Voltage, Vds Typ:650V; Current, Id Cont:6.8A; On State Resistance:0.52ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:6.8A; Drain Source Voltage Vds:650V; On Resistance Rds(on):520mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:66W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:6.8A; Package / Case:TO-252; Power Dissipation Pd:66W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***nell
MOSFET, N, TO-252; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:6.8A; Napięcie drenu / źródła Vds:650V; Rezystancja przewodzenia Rds(on):0.47ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:3V; Straty mocy Pd:66W; Rodzaj obudowy tranzystora:TO-252; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (27-Jun-2018); Maks. prąd Id:6.8A; Napięcie Vds, typ.:650V; Napięcie Vgs pomiaru Rds on:10V; Napięcie Vgs, maks.:20V; Rodzaj tranzystora:Mocy MOSFET; Temperatura robocza, min.:-55°C; Typ zakończenia:Do montażu powierzchniowego; Zakres temperatury roboczej:-55°C do +150°C
Parte # Mfg. Descripción Valores Precio
IPD60R520CPBTMA1
DISTI # IPD60R520CPBTMA1TR-ND		Infineon Technologies AGMOSFET N-CH 600V 6.8A TO-252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    IPD60R520CPBTMA1
    DISTI # IPD60R520CPBTMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 600V 6.8A TO-252
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IPD60R520CPBTMA1
      DISTI # IPD60R520CPBTMA1DKR-ND      		Infineon Technologies AGMOSFET N-CH 600V 6.8A TO-252
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IPD60R520CPATMA1
        DISTI # IPD60R520CPATMA1-ND        		Infineon Technologies AGMOSFET N-CH 600V 6.8A TO-252
        RoHS: Compliant
        Container: Tape & Reel (TR)        		Limited Supply - Call
          IPD60R520CPInfineon Technologies AGPower Field-Effect Transistor, 6.8A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
          RoHS: Compliant          		4840
          • 1000:$0.7500
          • 500:$0.7900
          • 100:$0.8200
          • 25:$0.8600
          • 1:$0.9200
          IPD60R520CPATMA1Infineon Technologies AGPower Field-Effect Transistor, 6.8A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252
          RoHS: Compliant          		17500
          • 1000:$0.9000
          • 500:$0.9400
          • 100:$0.9800
          • 25:$1.0300
          • 1:$1.1000
          IPD60R520CPBTMA1Infineon Technologies AGPower Field-Effect Transistor, 6.8A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
          RoHS: Not Compliant          		7500
          • 1000:$0.7500
          • 500:$0.7900
          • 100:$0.8200
          • 25:$0.8600
          • 1:$0.9200
          Imagen Parte # Descripción
          IPD60R380C6ATMA1

          Mfr.#: IPD60R380C6ATMA1

          OMO.#: OMO-IPD60R380C6ATMA1

          		 MOSFET N-Ch 600V 10.6A DPAK-2
          IPD60R280P7SAUMA1

          Mfr.#: IPD60R280P7SAUMA1

          OMO.#: OMO-IPD60R280P7SAUMA1-INFINEON-TECHNOLOGIES

          		 MOSFET N-CH 600V 12A TO252-3
          IPD60R600P7SAUMA1

          Mfr.#: IPD60R600P7SAUMA1

          OMO.#: OMO-IPD60R600P7SAUMA1-INFINEON-TECHNOLOGIES

          		 MOSFET N-CH 600V 6A TO252-3
          IPD60R650CEAUMA1

          Mfr.#: IPD60R650CEAUMA1

          OMO.#: OMO-IPD60R650CEAUMA1-INFINEON-TECHNOLOGIES

          		 Trans MOSFET N-CH 600V 9.9A 3-Pin(2+Tab) DPAK T/R
          IPD60R460CEATMA1-CUT TAPE

          Mfr.#: IPD60R460CEATMA1-CUT TAPE

          OMO.#: OMO-IPD60R460CEATMA1-CUT-TAPE-1190

          		 Nuevo y original
          IPD60R2K0C6,6R2K0C6,

          Mfr.#: IPD60R2K0C6,6R2K0C6,

          OMO.#: OMO-IPD60R2K0C6-6R2K0C6--1190

          		 Nuevo y original
          IPD60R400CEATMA1 , 2SD23

          Mfr.#: IPD60R400CEATMA1 , 2SD23

          OMO.#: OMO-IPD60R400CEATMA1-2SD23-1190

          		 Nuevo y original
          IPD60R460CEATMA1 , 2SD23

          Mfr.#: IPD60R460CEATMA1 , 2SD23

          OMO.#: OMO-IPD60R460CEATMA1-2SD23-1190

          		 Nuevo y original
          IPD60R600P7ATMA1

          Mfr.#: IPD60R600P7ATMA1

          OMO.#: OMO-IPD60R600P7ATMA1-INFINEON-TECHNOLOGIES

          		 MOSFET N-CH 650V 6A TO252-3
          IPD60R380C6

          Mfr.#: IPD60R380C6

          OMO.#: OMO-IPD60R380C6-INFINEON-TECHNOLOGIES

          		 IGBT Transistors MOSFET N-Ch 600V 10.6A DPAK-2 CoolMOS C6
          Disponibilidad
          Valores:
          Available
          En orden:
          1500
          Ingrese la cantidad:
          El precio actual de IPD60R520CP es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
          Precio de referencia (USD)
          Cantidad
          Precio unitario
          Ext. Precio
          1
          1,12 US$
          1,12 US$
          10
          1,07 US$
          10,69 US$
          100
          1,01 US$
          101,25 US$
          500
          0,96 US$
          478,15 US$
          1000
          0,90 US$
          900,00 US$
          Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
          Empezar con
          Nuevos productos
          More Newest Products
          Top