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IPP037N08N3GXKSA1

IPP037N08N3GXKSA1
Mfr. #:
IPP037N08N3GXKSA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 80V 100A TO220-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPP037N08N3GXKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
80 V
Id - Corriente de drenaje continua:
100 A
Rds On - Resistencia de la fuente de drenaje:
3.5 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
214 W
Configuración:
Único
Nombre comercial:
OptiMOS
Embalaje:
Tubo
Altura:
15.65 mm
Longitud:
10 mm
Serie:
OptiMOS 3
Tipo de transistor:
1 N-Channel
Ancho:
4.4 mm
Marca:
Infineon Technologies
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
500
Subcategoría:
MOSFET
Parte # Alias:
G IPP037N08N3 IPP37N8N3GXK SP000680776
Unidad de peso:
0.211644 oz
Tags
IPP037N08N3GX, IPP037N08N3, IPP037N08, IPP037, IPP03, IPP0, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 80 V 3.5 mOhm 117 nC OptiMOS™ Power Mosfet - TO-220-3
***p One Stop Japan
Trans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-220 Tube
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:100A; On Resistance Rds(On):0.0028Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V Rohs Compliant: Yes
***ineon
OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control
Parte # Mfg. Descripción Valores Precio
IPP037N08N3GXKSA1
DISTI # IPP037N08N3GXKSA1-ND		Infineon Technologies AGMOSFET N-CH 80V 100A TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1000:$1.4280
  • 500:$1.6920
  • 100:$2.1320
  • 10:$2.6160
  • 1:$2.8800
IPP037N08N3GXK
DISTI # IPP037N08N3GXKSA1		Infineon Technologies AGTrans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: IPP037N08N3GXKSA1)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 1
  • 1:$0.9269
  • 10:$0.9139
  • 25:$0.9009
  • 50:$0.8879
  • 100:$0.8559
  • 500:$0.8269
  • 1000:$0.8129
IPP037N08N3GXKSA1
DISTI # 50Y2053		Infineon Technologies AGMOSFET Transistor, N Channel, 100 A, 80 V, 0.0028 ohm, 10 V, 2.8 V RoHS Compliant: Yes127
  • 1:$2.3600
  • 10:$2.0000
  • 100:$1.6000
  • 500:$1.4100
  • 1000:$1.1600
  • 2500:$1.0900
  • 5000:$1.0500
IPP037N08N3GXKSA1.
DISTI # 27AC6744		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0028ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power Dissipation Pd:214W,No. of Pins:3Pins RoHS Compliant: Yes0
  • 1:$2.3600
  • 10:$2.0000
  • 100:$1.6000
  • 500:$1.4100
  • 1000:$1.1600
  • 2500:$1.0900
  • 5000:$1.0500
IPP037N08N3GXKSA1
DISTI # 726-IPP037N08N3GXKSA		Infineon Technologies AGMOSFET N-Ch 80V 100A TO220-3
RoHS: Compliant		281
  • 1:$2.3600
  • 10:$2.0000
  • 100:$1.6000
  • 500:$1.4100
IPP037N08N3GXKSA1
DISTI # 9140182P		Infineon Technologies AGMOSFET N-CHANNEL 80V 100A OPTIMOS TO220, TU5
  • 50:£1.2510
  • 200:£1.1040
  • 500:£1.0130
IPP037N08N3GXKSA1
DISTI # IPP037N08N3GXKSA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,80V,100A,214W,PG-TO220-3420
  • 1:$1.9778
  • 5:$1.7050
  • 25:$1.3754
  • 100:$1.1821
  • 500:$1.1048
IPP037N08N3GXKSA1
DISTI # 2480753		Infineon Technologies AGMOSFET, N-CH, 80V, 100A, TO-220-3
RoHS: Compliant		325
  • 1:£1.5000
  • 10:£1.1100
  • 100:£0.9620
  • 250:£0.8540
  • 500:£0.8340
IPP037N08N3GXKSA1
DISTI # 2480753		Infineon Technologies AGMOSFET, N-CH, 80V, 100A, TO-220-3
RoHS: Compliant		127
  • 1:$2.5800
  • 10:$2.4100
  • 25:$2.1300
  • 100:$2.0100
  • 250:$1.9100
  • 500:$1.8200
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Disponibilidad
Valores:
907
En orden:
2890
Ingrese la cantidad:
El precio actual de IPP037N08N3GXKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,35 US$
2,35 US$
10
2,00 US$
20,00 US$
100
1,60 US$
160,00 US$
500
1,40 US$
700,00 US$
1000
1,16 US$
1 160,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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