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IKY50N120CH3XKSA1

IKY50N120CH3XKSA1
Mfr. #:
IKY50N120CH3XKSA1
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IKY50N120CH3XKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO247-4-2
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
1200 V
Voltaje de saturación colector-emisor:
2 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
100 A
Pd - Disipación de energía:
652 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 175 C
Embalaje:
Tubo
Corriente continua de colector Ic Max:
100 A
Marca:
Infineon Technologies
Corriente de fuga puerta-emisor:
100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
240
Subcategoría:
IGBT
Parte # Alias:
IKY50N120CH3 SP001465126
Unidad de peso:
0.211644 oz
Tags
IKY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***nell
IGBT, 1.2KV, 100A, 652W, TO-247
***ark
Igbt, 1.2Kv, 100A, 652W, To-247; Dc Collector Current:100A; Collector Emitter Saturation Voltage Vce(On):2V; Power Dissipation Pd:652W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247; No. Of Pins:4Pins; Rohs Compliant: Yes
***ineon
Responding to the market requirement of high power density and highest performance discrete products Infineon introduces the new Kelvin Emitter TO-247PLUS 4pin package for 1200V IGBT. Higher current capability, improved thermal behaviour, extended C-E creepage are the key features of the TO-247PLUS package. The 4pin package configuration provides ultra-low inductance to the gate-emitter control loop with the 4pin package directly to the gate driver and allows for reduction the both of E on and E off losses amounting up to 20% lower total switching losses E ts. | Summary of Features: Extremely low control inductance loop with extra emitter pin for driver feedback; 20% reduction in total switching losses compared to 3pin package using same technology; Up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint | Benefits: Highest efficiency with lowest switching losses 1200 V IGBT; High power density 1200V discrete IGBT; Lower thermal resistance R th(jh) and improved by ~15% heat dissipation capability of TO-247PLUS vs TO-247 | Target Applications: Uninterruptable power suppliers (UPS); Battery Charger; Energy storage; Portable welding converter
Parte # Mfg. Descripción Valores Precio
IKY50N120CH3XKSA1
DISTI # IKY50N120CH3XKSA1-ND		Infineon Technologies AGIGBT 1200V 100A TO247-4
RoHS: Compliant
Min Qty: 1
Container: Tube		240In Stock
  • 720:$8.7800
  • 240:$9.8699
  • 25:$11.2020
  • 10:$11.6860
  • 1:$12.7200
IKY50N120CH3XKSA1
DISTI # IKY50N120CH3XKSA1		Infineon Technologies AGIGBT PRODUCTS - Rail/Tube (Alt: IKY50N120CH3XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 2400:$7.2900
  • 1440:$7.3900
  • 960:$7.6900
  • 480:$7.9900
  • 240:$8.2900
IKY50N120CH3XKSA1
DISTI # SP001465126		Infineon Technologies AGIGBT PRODUCTS (Alt: SP001465126)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€5.9900
  • 500:€6.3900
  • 100:€6.6900
  • 50:€6.8900
  • 25:€7.1900
  • 10:€7.4900
  • 1:€8.1900
IKY50N120CH3XKSA1
DISTI # 93AC7076		Infineon Technologies AGIGBT, 1.2KV, 100A, 652W, TO-247,DC Collector Current:100A,Collector Emitter Saturation Voltage Vce(on):2V,Power Dissipation Pd:652W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-247,No. of Pins:4Pins,RoHS Compliant: Yes219
  • 500:$8.4400
  • 250:$9.0200
  • 100:$9.4900
  • 50:$10.1400
  • 25:$10.7800
  • 10:$11.2400
  • 1:$12.2200
IKY50N120CH3XKSA1
DISTI # 726-IKY50N120CH3XKSA		Infineon Technologies AGIGBT Transistors
RoHS: Compliant		199
  • 1:$12.1000
  • 10:$11.1300
  • 25:$10.6700
  • 100:$9.4000
  • 250:$8.9300
  • 500:$8.3600
IKY50N120CH3XKSA1
DISTI # 1623281		Infineon Technologies AGIGBT 1200V 50A HIGHSPEED3 DIODE TO-247-4, TU219
  • 60:£5.3760
  • 30:£5.7060
IKY50N120CH3XKSA1
DISTI # 2986353		Infineon Technologies AGIGBT, 1.2KV, 100A, 652W, TO-247
RoHS: Compliant		219
  • 250:$10.8800
  • 100:$12.4000
  • 50:$13.3100
  • 10:$14.1900
  • 5:$16.3100
  • 1:$17.6200
IKY50N120CH3XKSA1
DISTI # 2986353		Infineon Technologies AGIGBT, 1.2KV, 100A, 652W, TO-247219
  • 100:£6.8100
  • 50:£7.2700
  • 10:£7.7300
  • 5:£8.7800
  • 1:£9.2900
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Disponibilidad
Valores:
199
En orden:
2182
Ingrese la cantidad:
El precio actual de IKY50N120CH3XKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
12,10 US$
12,10 US$
10
11,13 US$
111,30 US$
25
10,67 US$
266,75 US$
100
9,40 US$
940,00 US$
250
8,93 US$
2 232,50 US$
500
8,36 US$
4 180,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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