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IPW65R095C7XKSA1

IPW65R095C7XKSA1
Mfr. #:
IPW65R095C7XKSA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET HIGH POWER_NEW
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPW65R095C7XKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPW65R095C7XKSA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
24 A
Rds On - Resistencia de la fuente de drenaje:
84 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
45 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
128 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
CoolMOS
Embalaje:
Tubo
Altura:
21.1 mm
Longitud:
16.13 mm
Serie:
CoolMOS C7
Tipo de transistor:
1 N-Channel
Ancho:
5.21 mm
Marca:
Infineon Technologies
Otoño:
7 ns
Tipo de producto:
MOSFET
Hora de levantarse:
12 ns
Cantidad de paquete de fábrica:
240
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
60 ns
Tiempo típico de retardo de encendido:
14 ns
Parte # Alias:
IPW65R095C7 SP001080128
Unidad de peso:
1.340411 oz
Tags
IPW65R09, IPW65R0, IPW65R, IPW65, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 2, N-Channel MOSFET, 24 A, 700 V, 3-Pin TO-247 Infineon IPW65R095C7XKSA1
***ical
Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-247 Tube
*** Source Electronics
Metal Oxide Semiconductor Field Effect Transistor
***et Europe
Trans MOSFET N-CH 700V 33A 3-Pin TO-247 Tube
***an P&S
700V,100A,N-channel power MOSFET
***ark
MOSFET, N-CH, 650V, 24A, TO-247-3
***i-Key
MOSFET N-CH 650V 24A TO247
***ukat
N-Ch 650V 24A 128W 0,095R TO247
***ronik
N-CH 650V 95mOhm 24A TO247
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 650V, 24A, TO-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.084ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:128W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, 650V, 24A, TO-247-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:24A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.084ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:128W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
Parte # Mfg. Descripción Valores Precio
IPW65R095C7XKSA1
DISTI # V99:2348_06377177		Infineon Technologies AGTrans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-247 Tube223
  • 1:$3.5023
IPW65R095C7XKSA1
DISTI # V36:1790_06377177		Infineon Technologies AGTrans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-247 Tube0
  • 240000:$2.6380
  • 120000:$2.6430
  • 24000:$3.3570
  • 2400:$4.8390
  • 240:$5.1000
IPW65R095C7XKSA1
DISTI # IPW65R095C7XKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V 24A TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		458In Stock
  • 2640:$3.1625
  • 720:$3.9472
  • 240:$4.6368
  • 25:$5.3500
  • 10:$5.6590
  • 1:$6.3000
IPW65R095C7XKSA1
DISTI # 33946866		Infineon Technologies AGTrans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-247 Tube223
  • 2:$3.5023
IPW65R095C7XKSA1
DISTI # IPW65R095C7XKSA1		Infineon Technologies AGTrans MOSFET N-CH 700V 33A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW65R095C7XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 2400:$2.7900
  • 1440:$2.8900
  • 960:$2.9900
  • 480:$3.0900
  • 240:$3.1900
IPW65R095C7XKSA1
DISTI # SP001080128		Infineon Technologies AGTrans MOSFET N-CH 700V 33A 3-Pin TO-247 Tube (Alt: SP001080128)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€2.4900
  • 500:€2.5900
  • 100:€2.6900
  • 50:€2.8900
  • 25:€2.9900
  • 10:€3.0900
  • 1:€3.3900
IPW65R095C7
DISTI # 726-IPW65R095C7		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		363
  • 1:$5.9900
  • 10:$5.0900
  • 100:$4.4100
  • 250:$4.1900
  • 500:$3.7600
IPW65R095C7XKSA1
DISTI # 726-IPW65R095C7XKSA1		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		220
  • 1:$5.9900
  • 10:$5.0900
  • 100:$4.4100
  • 250:$4.1900
  • 500:$3.7600
IPW65R095C7XKSA1
DISTI # IPW65R095C7XKSA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,650V,24A,128W,PG-TO247-3203
  • 30:$4.7400
  • 10:$5.4500
  • 3:$6.1700
  • 1:$6.8600
IPW65R095C7XKSA1
DISTI # IPW65R095C7		Infineon Technologies AGN-Ch 650V 24A 128W 0,095R TO247
RoHS: Compliant		0
  • 1:€7.1500
  • 10:€4.1500
  • 50:€2.6500
  • 100:€2.5200
IPW65R095C7XKSA1
DISTI # 2420506		Infineon Technologies AGMOSFET, N-CH, 650V, 24A, TO-247-3480
  • 500:£2.9000
  • 250:£3.2300
  • 100:£3.3900
  • 10:£3.9300
  • 1:£5.1000
IPW65R095C7XKSA1
DISTI # 2420506		Infineon Technologies AGMOSFET, N-CH, 650V, 24A, TO-247-3
RoHS: Compliant		240
  • 500:$5.6700
  • 250:$6.3100
  • 100:$6.6500
  • 10:$7.6700
  • 1:$9.0300
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Disponibilidad
Valores:
242
En orden:
2225
Ingrese la cantidad:
El precio actual de IPW65R095C7XKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
5,99 US$
5,99 US$
10
5,09 US$
50,90 US$
100
4,41 US$
441,00 US$
250
4,19 US$
1 047,50 US$
500
3,76 US$
1 880,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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