IRF7453PBF

Mfr. #:: IRF7453PBF
Fabricante:: Infineon Technologies
Descripción:: MOSFET N-CH 250V 2.2A 8-SOIC
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: IRF7453PBF Ficha de datos
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HTML Datasheet:: IRF7453PBF Datasheet IRF7453PBF Datasheet (P4-P6)IRF7453PBF Datasheet (P7-P8)
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Fabricante: IR

categoria de producto: FET - Single

Tags: IRF7453, IRF745, IRF74, IRF7, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF7453PBF Descripción

***ernational Rectifier: 250V Single N-Channel HEXFET Power MOSFET in a SO-8 package

***et Europe: Trans MOSFET N-CH 250V 2.2A 8-Pin SOIC

***ied Electronics & Automation: MOSFET, 250V, 2.2A, 230 mOhm, 25 nC Qg, SO-8

***i-Key: MOSFET N-CH 250V 2.2A 8-SOIC

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:250V; Continuous Drain Current, Id:2.2A; On Resistance, Rds(on):230mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

***nell: MOSFET, N, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:250V; Current, Id Cont:2.2A; Resistance, Rds On:0.23ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5.5V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:17A; Pin Configuration:(1+2+3)S,4G, (8+7+6+5)D; Power, Pd:2.5W; Time, Fall:20ns; Time, Rise:2.5ns; Transistors, No. of:1; Voltage, Vds Max:250V; Voltage, Vgs Max:30V

***ment14 APAC: MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:2.2A; Drain Source Voltage Vds:250V; On Resistance Rds(on):230mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.2A; Fall Time tf:20ns; No. of Transistors:1; Package / Case:SOIC; Pin Configuration:(1+2+3)S,4G, (8+7+6+5)D; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:17A; Rise Time:2.5ns; Termination Type:SMD; Voltage Vds Typ:250V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

Market price

Parte #	Mfg.	Descripción	Valores
IRF7453PBF DISTI # IRF7453PBF-ND	Infineon Technologies AG	MOSFET N-CH 250V 2.2A 8-SOIC RoHS: Compliant Min Qty: 4085 Container: Tube	Limited Supply - Call
IRF7453TRPBF DISTI # IRF7453PBFTR-ND	Infineon Technologies AG	MOSFET N-CH 250V 2.2A 8-SOIC RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	Limited Supply - Call
IRF7453TRPBF DISTI # IRF7453PBFCT-ND	Infineon Technologies AG	MOSFET N-CH 250V 2.2A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IRF7453TRPBF DISTI # IRF7453PBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 250V 2.2A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call

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En orden:: 2500
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IRF7453PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes