IRF6641TR1PBF

IRF6641TR1PBF
Mfr. #:
IRF6641TR1PBF
Fabricante:
Infineon / IR
Descripción:
MOSFET MOSFT 200V 26A 60mOhm 34nC Qg
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF6641TR1PBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6641TR1PBF DatasheetIRF6641TR1PBF Datasheet (P4-P6)IRF6641TR1PBF Datasheet (P7-P9)IRF6641TR1PBF Datasheet (P10)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
DirectFET-MZ
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
200 V
Id - Corriente de drenaje continua:
4.6 A
Rds On - Resistencia de la fuente de drenaje:
51 mOhms
Vgs th - Voltaje umbral puerta-fuente:
4.9 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
34 nC
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
89 W
Configuración:
Único
Embalaje:
Carrete
Altura:
0.7 mm
Longitud:
6.35 mm
Tipo de transistor:
1 N-Channel
Ancho:
5.05 mm
Marca:
Infineon / IR
Transconductancia directa - Mín .:
13 S
Otoño:
6.5 ns
Sensible a la humedad:
Yes
Tipo de producto:
MOSFET
Hora de levantarse:
11 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Parte # Alias:
SP001563484
Unidad de peso:
0.008713 oz
Tags
IRF6641, IRF664, IRF66, IRF6, IRF
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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 200V 4.6A 7-Pin Direct-FET MZ T/R
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:3.7A; On Resistance, Rds(on):59.9mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET MZ ;RoHS Compliant: Yes
***ernational Rectifier
A 200V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 26 amperes optimized with low on resistance for applications such as active ORýing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ment14 APAC
MOSFET, N, DIRECTFET, MZ; Transistor Polarity:N Channel; Continuous Drain Current Id:4.6A; Drain Source Voltage Vds:200V; On Resistance Rds(on):59.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Transistor Case Style:DirectFET; No. of Pins:5; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:46mJ; Base Number:6641; Cont Current Id @ 70°C:3.7A; Current Id Max:3.7A; Fall Time tf:65ns; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-40°C; Package / Case:MZ; Power Dissipation Pd:2.8mW; Pulse Current Idm:37A; Rise Time:11ns; Storage Temperature Max:150°C; Storage Temperature Min:-40°C; Termination Type:SMD; Voltage Vds:200V; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Parte # Mfg. Descripción Valores Precio
IRF6641TR1PBF
DISTI # IRF6641TR1PBFTR-ND
Infineon Technologies AGMOSFET N-CH 200V 4.6A DIRECTFET
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    IRF6641TR1PBF
    DISTI # IRF6641TR1PBFCT-ND
    Infineon Technologies AGMOSFET N-CH 200V 4.6A DIRECTFET
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      IRF6641TR1PBF
      DISTI # IRF6641TR1PBFDKR-ND
      Infineon Technologies AGMOSFET N-CH 200V 4.6A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        IRF6641TR1PBF
        DISTI # 70018844
        Infineon Technologies AG200V SINGLE N-CHANNEL HEXFET POWER MOSFET,DIRECTFET MZ PKG
        RoHS: Compliant
        0
        • 1000:$2.4300
        • 2000:$2.2300
        IRF6641TR1PBF
        DISTI # 942-IRF6641TR1PBF
        Infineon Technologies AGMOSFET MOSFT 200V 26A 60mOhm 34nC Qg
        RoHS: Compliant
        0
          IRF6641TR1PBFInternational Rectifier 2440
            IRF6641TR1PBFInternational Rectifier 
            RoHS: Compliant
            Europe - 1000
              IRF6641TR1PBF
              DISTI # 1388588RL
              Infineon Technologies AGMOSFET, N, DIRECTFET, MZ
              RoHS: Compliant
              0
              • 1:$4.0300
              • 10:$3.7800
              • 100:$3.4200
              • 250:$3.3000
              • 500:$3.1300
              • 1000:$3.1300
              • 2000:$3.0200
              • 5000:$2.8800
              IRF6641TR1PBF
              DISTI # 1388588
              Infineon Technologies AGMOSFET, N, DIRECTFET, MZ
              RoHS: Compliant
              0
              • 1:$4.0300
              • 10:$3.7800
              • 100:$3.4200
              • 250:$3.3000
              • 500:$3.1300
              • 1000:$3.1300
              • 2000:$3.0200
              • 5000:$2.8800
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              Mfr.#: IRF6645TRPBF.

              OMO.#: OMO-IRF6645TRPBF--1190

              Nuevo y original
              IRF6648TR1PBF , 2SJ579

              Mfr.#: IRF6648TR1PBF , 2SJ579

              OMO.#: OMO-IRF6648TR1PBF-2SJ579-1190

              Nuevo y original
              IRF6645TRPBF

              Mfr.#: IRF6645TRPBF

              OMO.#: OMO-IRF6645TRPBF-INFINEON-TECHNOLOGIES

              RF Bipolar Transistors MOSFET 100V 1 N-CH HEXFET DIRECTFET SJ
              Disponibilidad
              Valores:
              Available
              En orden:
              4000
              Ingrese la cantidad:
              El precio actual de IRF6641TR1PBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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