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SIR401DP-T1-GE3

SIR401DP-T1-GE3
Mfr. #:
SIR401DP-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET -20V Vds 12V Vgs PowerPAK SO-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIR401DP-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIR401DP-T1-GE3 DatasheetSIR401DP-T1-GE3 Datasheet (P4-P6)SIR401DP-T1-GE3 Datasheet (P7-P9)SIR401DP-T1-GE3 Datasheet (P10-P12)SIR401DP-T1-GE3 Datasheet (P13)
ECAD Model:
Más información:
SIR401DP-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
E
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerPAK-SO-8
Número de canales:
1 Channel
Polaridad del transistor:
P-Channel
Vds - Voltaje de ruptura de drenaje-fuente:
20 V
Id - Corriente de drenaje continua:
50 A
Rds On - Resistencia de la fuente de drenaje:
2.5 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1.5 V
Vgs - Voltaje puerta-fuente:
12 V
Qg - Carga de puerta:
310 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
39 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
TrenchFET, PowerPAK
Embalaje:
Carrete
Serie:
SEÑOR
Tipo de transistor:
1 P-Channel
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
77 S
Otoño:
41 ns
Tipo de producto:
MOSFET
Hora de levantarse:
13 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
175 ns
Tiempo típico de retardo de encendido:
14 ns
Parte # Alias:
SIR401DP-GE3
Unidad de peso:
0.017870 oz
Tags
SIR40, SIR4, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, P-CH, 30V, PPAK-SO8; Transistor Polarity:P Channel; Continuous Drain Cur
***Components
In a Pack of 5, P-Channel MOSFET, 50 A, 20 V, 8-Pin PowerPAK SO Vishay SIR401DP-T1-GE3
***ical
Trans MOSFET P-CH 20V 50A 8-Pin PowerPAK SO T/R
***i-Key
MOSFET P-CH 20V 50A PPAK SO-8
***
N-CHANNEL 20-V (D-S)
***ment14 APAC
MOSFET, P-CH, -20V, PPAK-SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0025ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:39W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET® P-Channel MOSFETs
Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.
Parte # Mfg. Descripción Valores Precio
SIR401DP-T1-GE3
DISTI # V72:2272_09215726		Vishay IntertechnologiesTrans MOSFET P-CH 20V 29A 8-Pin PowerPAK SO T/R
RoHS: Compliant		613
  • 500:$0.5259
  • 250:$0.6135
  • 100:$0.6160
  • 25:$0.7206
  • 10:$0.8806
  • 1:$1.0665
SIR401DP-T1-GE3
DISTI # V36:1790_09215726		Vishay IntertechnologiesTrans MOSFET P-CH 20V 29A 8-Pin PowerPAK SO T/R
RoHS: Compliant		0
  • 3000000:$0.3818
  • 1500000:$0.3820
  • 300000:$0.3925
  • 30000:$0.4090
  • 3000:$0.4116
SIR401DP-T1-GE3
DISTI # SIR401DP-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 20V 50A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		337In Stock
  • 1000:$0.4542
  • 500:$0.5754
  • 100:$0.6965
  • 10:$0.8930
  • 1:$1.0000
SIR401DP-T1-GE3
DISTI # SIR401DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 20V 50A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		337In Stock
  • 1000:$0.4542
  • 500:$0.5754
  • 100:$0.6965
  • 10:$0.8930
  • 1:$1.0000
SIR401DP-T1-GE3
DISTI # SIR401DP-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 20V 50A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 15000:$0.3763
  • 6000:$0.3910
  • 3000:$0.4116
SIR401DP-T1-GE3
DISTI # 31289156		Vishay IntertechnologiesTrans MOSFET P-CH 20V 29A 8-Pin PowerPAK SO T/R
RoHS: Compliant		613
  • 17:$1.0665
SIR401DP-T1-GE3
DISTI # SIR401DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 20V 29A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR401DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.3579
  • 18000:$0.3679
  • 12000:$0.3789
  • 6000:$0.3949
  • 3000:$0.4069
SIR401DP-T1-GE3
DISTI # SIR401DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 20V 29A 8-Pin PowerPAK SO T/R (Alt: SIR401DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.4299
  • 18000:€0.4499
  • 12000:€0.5089
  • 6000:€0.6269
  • 3000:€0.8749
SIR401DP-T1-GE3
DISTI # 78-SIR401DP-T1-GE3		Vishay IntertechnologiesMOSFET -20V Vds 12V Vgs PowerPAK SO-8
RoHS: Compliant		9932
  • 1:$0.9800
  • 10:$0.8070
  • 100:$0.6190
  • 500:$0.5330
SIR401DP-T1-GE3
DISTI # 7879342		Vishay IntertechnologiesMOSFET P-CH 20V 29A POWERPAK SO8, PK340
  • 100:£0.4300
  • 50:£0.4680
  • 5:£0.7600
SIR401DP-T1-GE3
DISTI # 7879342P		Vishay IntertechnologiesMOSFET P-CH 20V 29A POWERPAK SO8, RL2700
  • 100:£0.4300
  • 50:£0.4680
SIR401DP-T1-GE3
DISTI # 2283664		Vishay IntertechnologiesMOSFET, P-CH, -20V, PPAK-SO8
RoHS: Compliant		0
  • 3000:$0.7870
  • 500:$0.8030
  • 100:$0.9330
  • 10:$1.2200
  • 1:$1.4800
SIR401DP-T1-GE3
DISTI # 2283664		Vishay IntertechnologiesMOSFET, P-CH, -20V, PPAK-SO80
  • 500:£0.4060
  • 250:£0.4400
  • 100:£0.4730
  • 10:£0.6700
  • 1:£0.8550
SIR401DP-T1-GE3Vishay IntertechnologiesMOSFET -20V Vds 12V Vgs PowerPAK SO-8Americas -
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    L293DD

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    		 Digital Isolators Quad-CH w/ Intg DC/DC Converter
    SI7149ADP-T1-GE3

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    OMO.#: OMO-SI7149ADP-T1-GE3

    		 MOSFET -30V Vds 25V Vgs PowerPAK SO-8
    BTS500151TADATMA2

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    		 Power Switch ICs - Power Distribution HIC-PROFET
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    Mfr.#: 47053-1000

    OMO.#: OMO-47053-1000-410

    		 Headers & Wire Housings 4P VERT HDR W/FL
    SI7149ADP-T1-GE3

    Mfr.#: SI7149ADP-T1-GE3

    OMO.#: OMO-SI7149ADP-T1-GE3-VISHAY

    		 MOSFET P-CH 30V 50A PPAK SO-8
    L293DD

    Mfr.#: L293DD

    OMO.#: OMO-L293DD-STMICROELECTRONICS

    		 IC MTR DRV BIPOLR 4.5-36V 20SOIC
    Disponibilidad
    Valores:
    Available
    En orden:
    1992
    Ingrese la cantidad:
    El precio actual de SIR401DP-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,98 US$
    0,98 US$
    10
    0,81 US$
    8,07 US$
    100
    0,62 US$
    61,90 US$
    500
    0,53 US$
    266,50 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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