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SI2601DN-T1-GE3

SI2601DN-T1-GE3
Mfr. #:
SI2601DN-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 20V 19mohm @ 4.5V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI2601DN-T1-GE3 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
SI2601DN-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
E
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerPAK-1212-8
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Altura:
1.04 mm
Longitud:
3.3 mm
Serie:
SI2
Ancho:
3.3 mm
Marca:
Vishay / Siliconix
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Parte # Alias:
SI2601DN-GE3
Tags
SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Parte # Mfg. Descripción Valores Precio
SI2601DN-T1-GE3
DISTI # 781-SI2601DN-GE3		Vishay IntertechnologiesMOSFET 20V 19mohm @ 4.5V
RoHS: Compliant		0
  • 3000:$0.3920
  • 6000:$0.3730
  • 9000:$0.3590
Imagen Parte # Descripción
SI2601DN-T1-GE3

Mfr.#: SI2601DN-T1-GE3

OMO.#: OMO-SI2601DN-T1-GE3

 MOSFET 20V 19mohm @ 4.5V
SI2601DN-T1-GE3

Mfr.#: SI2601DN-T1-GE3

OMO.#: OMO-SI2601DN-T1-GE3-317

 RF Bipolar Transistors MOSFET 20V 19mohm @ 4.5V
Disponibilidad
Valores:
Available
En orden:
5000
Ingrese la cantidad:
El precio actual de SI2601DN-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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