MJ21196G

MJ21196G
Mfr. #:
MJ21196G
Fabricante:
ON Semiconductor
Descripción:
Bipolar Transistors - BJT 16A 250V 250W NPN
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
MJ21196G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
MJ21196G DatasheetMJ21196G Datasheet (P4-P6)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores bipolares - BJT
RoHS:
Y
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-204-2
Polaridad del transistor:
NPN
Configuración:
Único
Voltaje colector-emisor VCEO Max:
250 V
Colector- Voltaje base VCBO:
400 V
Emisor- Voltaje base VEBO:
5 V
Voltaje de saturación colector-emisor:
1.4 V
Corriente máxima del colector de CC:
16 A
Producto de ganancia de ancho de banda fT:
4 MHz
Temperatura mínima de funcionamiento:
- 65 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
MJ21196
Altura:
8.51 mm
Longitud:
39.37 mm
Embalaje:
Bandeja
Ancho:
26.67 mm
Marca:
EN Semiconductor
Corriente continua del colector:
16 A
Colector de CC / Ganancia base hfe Min:
25
Pd - Disipación de energía:
250 W
Tipo de producto:
BJT - Transistores bipolares
Cantidad de paquete de fábrica:
100
Subcategoría:
Transistores
Tags
MJ21196, MJ211, MJ21, MJ2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    L***v
    L***v
    LS

    Good

    2019-05-30
    S***r
    S***r
    UA

    Ok

    2019-04-22
***emi
Bipolar Transistor, NPN, 250 V, 16 A
***Yang
Trans GP BJT NPN 250V 16A 3-Pin(2+Tab) TO-204 Tray - Trays
***S.I.T. Europe - USA - Asia
Power Bipolar Transistor, 16A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
***ure Electronics
MJ Series 250 V 16 A Screw Mount NPN Silicon Power Transistor - TO-204AA
***th Star Micro
The MJ21195 and MJ21196 utilize Perforated Emitter technology and a specifically designed for high power audio output disk head positioners and linear applications.
***ment14 APAC
BIPOLAR TRANSISTOR, NPN, 250V; Transisto; BIPOLAR TRANSISTOR, NPN, 250V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:250V; Transition Frequency Typ ft:4MHz; Power Dissipation Pd:250W; DC Collector Current:16A; DC Current Gain hFE:25; No. of Pins:2
***hard Electronics
Transistor; Bipolar; Si; NPN; Power; VCEO 250VDC; IC 16A; PD 250W; TO-204AA (TO-3)
***emi
Bipolar Transistor, NPN, 250 V, 16 A
***ical
Trans GP BJT NPN 250V 16A 250000mW 3-Pin(2+Tab) TO-3 Tray
***r Electronics
Power Bipolar Transistor, 16A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
***enic
250V 250W 16A NPN TO-3 Bipolar Transistors - BJT ROHS
***ure Electronics
MJ Series 250 V 16 A Screw Mount NPN Silicon Power Transistor - TO-204AA
***nell
TRANSISTOR, NPN, TO-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 250V; Transition Frequency ft: 4MHz; Power Dissipation Pd: 250W; DC Collector Current: 16A; DC Current Gain hFE: 75hFE; Transistor Case Style
***th Star Micro
The MJ21193 and MJ21194 utilize Perforated Emitter technology and a specifically designed for high power audio output disk head positioners and linear applications.
***ark
BIPOLAR TRANSISTOR, NPN, 250V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:250V; Continuous Collector Current:16A; Power Dissipation:250W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Product Range:-; MSL:- RoHS Compliant: Yes
***(Formerly Allied Electronics)
Transistor, Bipolar,Si,NPN,Power,VCEO 250VDC,IC 16A,PD 250W,TO-204AA (TO-3)
***emi
Bipolar Transistor, NPN, 250 V, 16 A
***Yang
Trans GP BJT NPN 250V 16A 3-Pin(2+Tab) TO-204 Tray - Trays
***enic
250V 250W 16A 15@8A4V 4MHz [email protected] NPN -65¡Í~+200¡Í@(Tj) TO-3 Bipolar Transistors - BJT ROHS
***nell
TRANSISTOR, NPN, 250V, 16A, TO-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 250V; Transition Frequency ft: 4MHz; Power Dissipation Pd: 250W; DC Collector Current: 16A; DC Current Gain hFE: 60hFE; Transistor
***th Star Micro
The MJ15022 and MJ15024 are PowerBase power transistors designed for high power audio disk head positioners and other linear applications.
***emi
16 A, 200 V, NPN Bipolar Power Transistor
***Yang
Trans GP BJT NPN 200V 16A 3-Pin(2+Tab) TO-204 Tray - Trays
***r Electronics
Power Bipolar Transistor, 16A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
***ure Electronics
MJ Series 200 V 16 A Screw Mount NPN Silicon Power Transistor - TO-204AA
***(Formerly Allied Electronics)
ON Semi MJ15022G NPN Bipolar Transistor16 A 200 V 3-Pin TO-204
***nell
TRANSISTOR, NPN, TO-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 200V; Transition Frequency ft: 4MHz; Power Dissipation Pd: 250W; DC Collector Current: 16A; DC Current Gain hFE: 60hFE; Transistor Case Style
***th Star Micro
The MJ15022 and MJ15024 are PowerBase power transistors designed for high power audio disk head positioners and other linear applications.
***ark
BIPOLAR TRANSISTOR, NPN, 200V, 16A, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:200V; Continuous Collector Current:16A; Power Dissipation:250W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Product Range:- RoHS Compliant: Yes
Parte # Mfg. Descripción Valores Precio
MJ21196G
DISTI # V99:2348_07289871
ON SemiconductorTrans GP BJT NPN 250V 16A 3-Pin(2+Tab) TO-3 Tray
RoHS: Compliant
86
  • 500:$2.6850
  • 200:$2.9930
  • 100:$2.9960
MJ21196G
DISTI # V36:1790_07289871
ON SemiconductorTrans GP BJT NPN 250V 16A 3-Pin(2+Tab) TO-3 Tray
RoHS: Compliant
66
  • 500:$2.6850
  • 200:$2.9930
  • 100:$2.9960
MJ21196G
DISTI # MJ21196GOS-ND
ON SemiconductorTRANS NPN 250V 16A TO3
RoHS: Compliant
Min Qty: 1
Container: Tray
467In Stock
  • 1000:$3.3663
  • 500:$3.9915
  • 100:$4.6888
  • 10:$5.7230
  • 1:$6.3700
MJ21196G
DISTI # 30680136
ON SemiconductorTrans GP BJT NPN 250V 16A 3-Pin(2+Tab) TO-3 Tray
RoHS: Compliant
86
  • 2:$2.9960
MJ21196G
DISTI # 29063979
ON SemiconductorTrans GP BJT NPN 250V 16A 3-Pin(2+Tab) TO-3 Tray
RoHS: Compliant
66
  • 66:$2.9960
MJ21196G
DISTI # MJ21196G
ON SemiconductorTrans GP BJT NPN 250V 16A 3-Pin(2+Tab) TO-204 Tray (Alt: MJ21196G)
RoHS: Compliant
Min Qty: 1
Container: Tray
Europe - 0
  • 1:€3.5900
  • 10:€3.2900
  • 25:€3.1900
  • 50:€3.0900
  • 100:€2.9900
  • 500:€2.8900
  • 1000:€2.6900
MJ21196G
DISTI # MJ21196G
ON SemiconductorTrans GP BJT NPN 250V 16A 3-Pin(2+Tab) TO-204 Tray - Trays (Alt: MJ21196G)
RoHS: Compliant
Min Qty: 1
Container: Tray
Americas - 0
  • 1:$2.7900
  • 10:$2.7900
  • 25:$2.7900
  • 50:$2.7900
  • 100:$2.7900
  • 500:$2.7900
  • 1000:$2.7900
MJ21196G
DISTI # 26K4525
ON SemiconductorTrans GP BJT NPN 250V 16A 3-Pin(2+Tab) TO-204 Tray - Bulk (Alt: 26K4525)
RoHS: Compliant
Min Qty: 1
Container: Bulk
Americas - 0
  • 1:$6.0700
  • 10:$5.1600
  • 25:$4.9300
  • 50:$4.7000
  • 100:$4.4700
  • 250:$4.2400
  • 500:$3.8100
MJ21196G
DISTI # 26K4525
ON SemiconductorBIPOLAR TRANSISTOR, NPN, 250V,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:250V,Transition Frequency ft:4MHz,Power Dissipation Pd:250W,DC Collector Current:16A,DC Current Gain hFE:25hFE,No. of Pins:2Pins,MSL:- , RoHS Compliant: Yes152
  • 1:$5.4700
  • 10:$4.6500
  • 25:$4.4400
  • 50:$4.2300
  • 100:$4.0300
  • 250:$3.8200
  • 500:$3.4300
MJ21196G
DISTI # 863-MJ21196G
ON SemiconductorBipolar Transistors - BJT 16A 250V 250W NPN
RoHS: Compliant
2356
  • 1:$6.0700
  • 10:$5.1600
  • 100:$4.4700
  • 200:$4.2400
  • 500:$3.8100
  • 1000:$3.2100
  • 2000:$3.0500
MJ21196
DISTI # 863-MJ21196
ON SemiconductorBipolar Transistors - BJT 16A 250V 250W NPN
RoHS: Not compliant
0
    MJ21196GON Semiconductor 
    RoHS: Not Compliant
    45328
    • 1000:$2.4700
    • 500:$2.6000
    • 100:$2.7100
    • 25:$2.8200
    • 1:$3.0400
    MJ21196GON Semiconductor 6
      MJ21196GON Semiconductor 
      RoHS: Not Compliant
      Europe - 84
        MJ21196G
        DISTI # MJ21196G
        ON SemiconductorBJT 16A 250V 250W NPN
        RoHS: Compliant
        440
        • 50:€2.7100
        • 100:€2.3100
        • 300:€2.1100
        • 500:€2.0300
        MJ21196GON SemiconductorSilicon Power Transistors20
        • 1:$8.2600
        • 100:$5.2700
        • 500:$4.3500
        • 1000:$4.0000
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        Diodes - General Purpose, Power, Switching 100V Io/200mA BULK
        MY4-02 DC24

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        OMO.#: OMO-MY4-02-DC24-640

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        Disponibilidad
        Valores:
        Available
        En orden:
        1984
        Ingrese la cantidad:
        El precio actual de MJ21196G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        7,10 US$
        7,10 US$
        10
        6,42 US$
        64,20 US$
        50
        6,12 US$
        306,00 US$
        100
        5,31 US$
        531,00 US$
        200
        5,07 US$
        1 014,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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