STGB3NB60SDT4

STGB3NB60SDT4
Mfr. #:
STGB3NB60SDT4
Fabricante:
STMicroelectronics
Descripción:
IGBT 600V 6A 70W D2PAK
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STGB3NB60SDT4 Ficha de datos
Entrega:
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HTML Datasheet:
STGB3NB60SDT4 DatasheetSTGB3NB60SDT4 Datasheet (P4-P6)STGB3NB60SDT4 Datasheet (P7-P8)
ECAD Model:
Más información:
STGB3NB60SDT4 más información STGB3NB60SDT4 Product Details
Atributo del producto
Valor de atributo
Tags
STGB3NB, STGB3N, STGB3, STGB, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans IGBT Chip N-CH 600V 6A 3-Pin(2+Tab) D2PAK T/R
***ser
IGBTs Insulated Gate Bipolar Transistor N-Ch 600 Volt 3 Amp
***ment14 APAC
IGBT, SMD, 600V, 3A, D2-PAK; Transistor Type:IGBT; DC Collector Current:6A; Collector Emitter Voltage Vces:1.5V; Power Dissipation Pd:70W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-60°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:6A; Fall Time tf:720ns; Package / Case:D2-PAK; Power Dissipation Max:70W; Power Dissipation Pd:70W; Pulsed Current Icm:25A; Rise Time:150ns; Termination Type:SMD; Transistor Polarity:N Channel; Voltage Vces:600V
Parte # Mfg. Descripción Valores Precio
STGB3NB60SDT4
DISTI # STGB3NB60SDT4-ND
STMicroelectronicsIGBT 600V 6A 70W D2PAK
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)
Limited Supply - Call
    STGB3NB60SDT4
    DISTI # 1456845
    STMicroelectronicsIGBT, SMD, 600V, 3A, D2-PAK
    RoHS: Compliant
    0
    • 1000:$1.1500
    • 500:$1.2600
    • 250:$1.3900
    • 100:$1.5400
    • 25:$1.7300
    • 1:$1.9700
    Imagen Parte # Descripción
    STGB3NC120HDT4

    Mfr.#: STGB3NC120HDT4

    OMO.#: OMO-STGB3NC120HDT4

    IGBT Transistors IGBT 1200V 7A PowerMESH Ultrafast
    STGB3NC120HDT4

    Mfr.#: STGB3NC120HDT4

    OMO.#: OMO-STGB3NC120HDT4-STMICROELECTRONICS

    IGBT Transistors IGBT 1200V 7A PowerMESH Ultrafast
    STGB3NB60FDT4

    Mfr.#: STGB3NB60FDT4

    OMO.#: OMO-STGB3NB60FDT4-STMICROELECTRONICS

    IGBT 600V 6A 68W D2PAK
    STGB3NB60HD

    Mfr.#: STGB3NB60HD

    OMO.#: OMO-STGB3NB60HD-1190

    Nuevo y original
    STGB3NB60SDT4

    Mfr.#: STGB3NB60SDT4

    OMO.#: OMO-STGB3NB60SDT4-STMICROELECTRONICS

    IGBT 600V 6A 70W D2PAK
    Disponibilidad
    Valores:
    Available
    En orden:
    2000
    Ingrese la cantidad:
    El precio actual de STGB3NB60SDT4 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,00 US$
    0,00 US$
    10
    0,00 US$
    0,00 US$
    100
    0,00 US$
    0,00 US$
    500
    0,00 US$
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    1000
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    0,00 US$
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