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FQU12N20TU

FQU12N20TU
Mfr. #:
FQU12N20TU
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 200V N-Channel QFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FQU12N20TU Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-251-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
200 V
Id - Corriente de drenaje continua:
9 A
Rds On - Resistencia de la fuente de drenaje:
280 mOhms
Vgs - Voltaje puerta-fuente:
30 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
2.5 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Altura:
6.3 mm
Longitud:
6.8 mm
Serie:
FQU12N20
Tipo de transistor:
1 N-Channel
Escribe:
MOSFET
Ancho:
2.5 mm
Marca:
ON Semiconductor / Fairchild
Transconductancia directa - Mín .:
7.3 S
Otoño:
55 ns
Tipo de producto:
MOSFET
Hora de levantarse:
120 ns
Cantidad de paquete de fábrica:
5040
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
30 ns
Tiempo típico de retardo de encendido:
13 ns
Parte # Alias:
FQU12N20TU_NL
Unidad de peso:
0.012102 oz
Tags
FQU12N2, FQU12, FQU1, FQU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel QFET® MOSFET 200V, 9.0A, 280mΩ
***ark
Transistor,mosfet,n-Channel,200V V(Br)Dss,9A I(D),to-251Aa Rohs Compliant: Yes |Onsemi FQU12N20TU
***r Electronics
Power Field-Effect Transistor, 9A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts..
***i-Key
MOSFET N-CH 200V 7.6A IPAK
***ser
MOSFETs 200V N-Channel QFET
***el Nordic
Contact for details
***i-Key
MOSFET N-CH 200V 7.6A IPAK
***ser
MOSFETs 200V N-Ch QFET Logic Level
***-Wing Technology
N-CHANNEL POWER MOSFET
***ure Electronics
Single N-Channel 200 V 0.235 Ohm 38 nC HEXFET® Power Mosfet - IPAK
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 13A I(D), 200V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:13A; On Resistance, Rds(on):235mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:I-PAK ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***emi
Power MOSFET, N-Channel, QFET®, 250 V, 7.4 A, 420 mΩ, IPAK
***r Electronics
Power Field-Effect Transistor, 7.4A I(D), 250V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
Power MOSFET, N-Channel, QFET®, 200 V, 7.8 A, 360 mΩ, IPAK
***et
Trans MOSFET N-CH 200V 7.8A 3-Pin(3+Tab) IPAK Rail
***r Electronics
Power Field-Effect Transistor, 7.8A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
N-Ch/200V/10A/Qfet Rohs Compliant: Yes |Onsemi FQU10N20CTU
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
Power MOSFET, P-Channel, QFET®, -200 V, -3.7 A, 1.4 Ω, IPAK
*** Stop Electro
Power Field-Effect Transistor, 3.7A I(D), 200V, 1.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***rchild Semiconductor
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Parte # Mfg. Descripción Valores Precio
FQU12N20TU
DISTI # FQU12N20TU-ND		ON SemiconductorMOSFET N-CH 200V 9A IPAK
RoHS: Compliant
Min Qty: 5040
Container: Tube		Temporarily Out of Stock
  • 5040:$0.5709
FQU12N20TU
DISTI # FQU12N20TU		ON SemiconductorTrans MOSFET N-CH 200V 9A 3-Pin(3+Tab) IPAK Rail (Alt: FQU12N20TU)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€0.8019
  • 10:€0.7129
  • 25:€0.6409
  • 50:€0.5829
  • 100:€0.5339
  • 500:€0.4929
  • 1000:€0.4579
FQU12N20TU
DISTI # FQU12N20TU		ON SemiconductorTrans MOSFET N-CH 200V 9A 3-Pin(3+Tab) IPAK Rail - Rail/Tube (Alt: FQU12N20TU)
RoHS: Compliant
Min Qty: 5040
Container: Tube		Americas - 0
  • 5040:$0.4429
  • 10080:$0.4399
  • 20160:$0.4349
  • 30240:$0.4289
  • 50400:$0.4179
FQU12N20TU
DISTI # 82C4388		ON SemiconductorTRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,9A I(D),TO-251AA ROHS COMPLIANT: YES0
  • 10000:$0.5080
  • 2500:$0.5230
  • 1000:$0.6480
  • 500:$0.7420
  • 100:$0.8390
  • 10:$1.1000
  • 1:$1.2800
FQU12N20TU
DISTI # 512-FQU12N20TU		ON SemiconductorMOSFET 200V N-Channel QFET
RoHS: Compliant		3569
  • 1:$1.4000
  • 10:$1.1900
  • 100:$0.9130
  • 500:$0.8070
  • 1000:$0.6370
  • 2500:$0.5650
  • 10000:$0.5440
FQU12N20TUFairchild Semiconductor Corporation 
RoHS: Not Compliant		15120
  • 1000:$0.8200
  • 500:$0.8600
  • 100:$0.8900
  • 25:$0.9300
  • 1:$1.0000
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Disponibilidad
Valores:
Available
En orden:
1986
Ingrese la cantidad:
El precio actual de FQU12N20TU es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,10 US$
1,10 US$
10
0,94 US$
9,44 US$
100
0,72 US$
72,50 US$
500
0,64 US$
320,50 US$
1000
0,51 US$
506,00 US$
2500
0,45 US$
1 120,00 US$
10000
0,43 US$
4 320,00 US$
25000
0,42 US$
10 450,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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