IGW03N120H2

IGW03N120H2
Mfr. #:
IGW03N120H2
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors HIGH SPEED 2 TECH 1200V 3A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IGW03N120H2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
1200 V
Voltaje máximo del emisor de puerta:
20 V
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
IGW03N120
Embalaje:
Tubo
Corriente continua de colector Ic Max:
9.6 A
Altura:
20.95 mm
Longitud:
15.9 mm
Ancho:
5.3 mm
Marca:
Infineon Technologies
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
240
Subcategoría:
IGBT
Parte # Alias:
IGW03N120H2FKSA1 IGW3N12H2XK SP000014182
Unidad de peso:
1.340411 oz
Tags
IGW03, IGW0, IGW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1200V 9.6A 62500mW 3-Pin(3+Tab) TO-247 Tube
***ment14 APAC
IGBT, N, 1200V, 3.9A, TO-247; Transistor Type:IGBT; DC Collector Current:9.6A; Collector Emitter Voltage Vces:2.8V; Power Dissipation Pd:62.5W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:3.9A; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:62.5W; Power Dissipation Pd:62.5W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***ineon
Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies. | Summary of Features: Loss reduction in resonant circuits; Temperature stable behavior; Parallel switching capability; Tight parameter distribution; E off optimized for IC =1A | Target Applications: SMPS
Parte # Mfg. Descripción Valores Precio
IGW03N120H2FKSA1
DISTI # IGW03N120H2FKSA1-ND
Infineon Technologies AGIGBT 1200V 9.6A 62.5W TO247-3
RoHS: Compliant
Min Qty: 240
Container: Tube
Limited Supply - Call
  • 240:$2.3438
IGW03N120H2XK
DISTI # IGW03N120H2FKSA1
Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 9.6A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IGW03N120H2FKSA1)
RoHS: Compliant
Min Qty: 480
Container: Tube
Americas - 0
  • 480:$1.5900
  • 960:$1.4900
  • 1440:$1.4900
  • 2400:$1.3900
  • 4800:$1.3900
IGW03N120H2Infineon Technologies AGInsulated Gate Bipolar Transistor, 9.6A I(C), 1200V V(BR)CES, N-Channel, TO-247AD
RoHS: Compliant
60
  • 1000:$1.4600
  • 500:$1.5300
  • 100:$1.6000
  • 25:$1.6600
  • 1:$1.7900
IGW03N120H2
DISTI # 726-IGW03N120H2
Infineon Technologies AGIGBT Transistors HIGH SPEED 2 TECH 1200V 3A
RoHS: Compliant
0
    IGW03N120H2FKSA1
    DISTI # N/A
    Infineon Technologies AGIGBT Transistors IGBT PRODUCTS0
      IGW03N120H2
      DISTI # 1471730
      Infineon Technologies AGIGBT, N, 1200V, 3.9A, TO-247
      RoHS: Compliant
      0
      • 1:$4.8000
      • 10:$4.0900
      • 100:$3.5500
      • 250:$3.3500
      • 500:$3.0300
      • 1000:$2.5600
      • 2500:$2.4300
      • 5000:$2.4300
      Imagen Parte # Descripción
      IGW03N120H2

      Mfr.#: IGW03N120H2

      OMO.#: OMO-IGW03N120H2

      IGBT Transistors HIGH SPEED 2 TECH 1200V 3A
      IGW03N120H2FKSA1

      Mfr.#: IGW03N120H2FKSA1

      OMO.#: OMO-IGW03N120H2FKSA1

      IGBT Transistors IGBT PRODUCTS
      IGW03N120H2 G03H1202

      Mfr.#: IGW03N120H2 G03H1202

      OMO.#: OMO-IGW03N120H2-G03H1202-1190

      Nuevo y original
      IGW03N120H2FKSA1

      Mfr.#: IGW03N120H2FKSA1

      OMO.#: OMO-IGW03N120H2FKSA1-INFINEON-TECHNOLOGIES

      IGBT 1200V 9.6A 62.5W TO247-3
      IGW03N120H2XK

      Mfr.#: IGW03N120H2XK

      OMO.#: OMO-IGW03N120H2XK-1190

      Trans IGBT Chip N-CH 1.2KV 9.6A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IGW03N120H2FKSA1)
      IGW03N120H2

      Mfr.#: IGW03N120H2

      OMO.#: OMO-IGW03N120H2-126

      IGBT Transistors HIGH SPEED 2 TECH 1200V 3A
      Disponibilidad
      Valores:
      Available
      En orden:
      2500
      Ingrese la cantidad:
      El precio actual de IGW03N120H2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      3,03 US$
      3,03 US$
      10
      2,57 US$
      25,70 US$
      100
      2,23 US$
      223,00 US$
      250
      2,11 US$
      527,50 US$
      500
      1,90 US$
      950,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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