AO4449

Mfr. #:: AO4449
Fabricante:: Alpha & Omega Semiconductor Inc
Descripción:: MOSFET P-CH 30V 7A 8SOIC
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: AO4449 Ficha de datos
Entrega:: DHL FedEx Ups TNT EMS
Pago:: T/T Paypal Visa MoneyGram Western Union
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Atributo del producto
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Tags: AO444, AO44, AO4

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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

AO4449 Descripción

***ical: Trans MOSFET P-CH 30V 7A 8-Pin SOIC

***ha & Omega Semiconductor SCT: 30V P-Channel MOSFET, SO-8, RoHS

***el Electronic: CAP CER 4.7PF 50V C0G/NP0 0201

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.03Ohm;ID 7.3A;SO-8;PD 2.5W;VGS +/-20V;-55d

***ure Electronics: Single N-Channel 30 V 0.03 Ohm 19 nC HEXFET® Power Mosfet - SOIC-8

*** Source Electronics: MOSFET N-CH 30V 7.3A 8-SOIC / Trans MOSFET N-CH Si 30V 7.3A 8-Pin SOIC T/R

***ment14 APAC: N CHANNEL MOSFET, 30V, 7A; Transistor PO; Polarity:N Channel; Continuous Drain Current Id:7A; Source

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***nell: MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.3A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.03ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipat

***Yang: Transistor MOSFET Array Dual N-CH 30V 6.5A/7.9A 8-Pin SOIC T/R - Tape and Reel

***ment14 APAC: MOSFET, DUAL N-CH, 30V, 7.9A, SOIC-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:7.9A; Source Voltage Vds:30V; On

***nell: MOSFET, DUAL, N, SMD, SO-8; Transistor Type:PowerTrench; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:6.5A; Resistance, Rds On:29mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.9V; Case Style:SOIC; Termination Type:SMD; Current, Id Cont N Channel 2:6.5A; Current, Id Cont N Channel 3:7.9A; Current, Idm Pulse N Channel 2:20A; Current, Idm Pulse N Channel 3:30A; No. of Pins:8; Power Dissipation:2W; Resistance, Rds on N Channel 1:0.020ohm; Resistance, Rds on N Channel 2:0.029ohm; Transistors, No. of:1; Voltage, Vds Max:30V

***rchild Semiconductor: The FDS6986AS is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6986AS contains two unique 30V, N-channel, logic level, PowerTrenchMOSFETs designed to maximize power conversion efficiency.The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conductionlosses. Q2 also includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.

***Yang: Transistor MOSFET Array Dual N-CH 30V 6.3A/8.6A 8-Pin SOIC T/R

***el Electronic: ON SEMICONDUCTOR - FDS6982AS - Dual MOSFET, Dual N Channel, 8.6 A, 30 V, 0.011 ohm, 10 V, 1.4 V

***ure Electronics: Dual N-Channel 30 V 28/13.5 mOhm Surface Mount Dual PowerTrench SyncFET - SOIC-8

***ment14 APAC: MOSFET, DUAL, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):28mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Cont Current Id N Channel 2:6.3A; Cont Current Id N Channel 3:8.6A; Current Id Max:8.6A; No. of Transistors:1; On State Resistance Channel 1:13.5mohm; On State Resistance N Channel 2:28mohm; Package / Case:SOIC; Power Dissipation Pd:2W; Pulse Current Idm N Channel 2:20A; Pulse Current Idm N Channel 3:30A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.4V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: The FDS6982AS is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6982AS contains two unique 30V, N-channel, logic level, PowerTrench® MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.

***et: Transistor MOSFET Array Dual N-CH 30V 7.3A 8-Pin SOIC T/R

***ure Electronics: Dual N-Channel 30 V 0.024 Ohm Surface Mount Enhancement Mode MOSFET - SOP-8

***p One Stop: Trans MOSFET N-CH 30V 7.3A 8-Pin SO T/R

***des Inc SCT: DUAL N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS

***ronik: DUAL 30V 7A 24mOhm SO-8 RoHSconf

***ure Electronics: Dual N-Channel 30 V 0.028 Ohm Enhancement Mode MOSFET - SOIC-8

***et Europe: Transistor MOSFET Array Dual N-CH 30V 7.1A 8-Pin SOIC T/R

***nell: MOSFET, NN, SO-8; Module Configuration:Dual N Channel; Transistor Polarity:Dual N; Max Current Id:7.1A; Max Voltage Vds:30V; On State Resistance:0.028ohm; Rds Measurement Voltage:10V; Typ Voltage Vgs th:3V; Power Dissipation:2.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; Case Style:SOIC; Termination Type:SMD; Transistor Type:MOSFET; Cont Current Id:7.1A; Max Voltage Vgs:20V; Min Voltage Vgs th:1V; On State Resistance @ Vgs = 4.5V:0.045ohm; On State resistance @ Vgs = 10V:0.028ohm; Pulse Current Idm:33.6A; Typ Voltage Vds:30V; Voltage Vgs Rds on Measurement:10V

Market price

Parte #	Mfg.	Descripción	Valores	Precio
AO4449 DISTI # V36:1790_07841108	Alpha & Omega Semiconductor	Trans MOSFET P-CH 30V 7A 8-Pin SOIC RoHS: Compliant	0	3000000:$0.1624 1500000:$0.1626 300000:$0.1781 30000:$0.2035 3000:$0.2077
AO4449 DISTI # 785-1199-1-ND	Alpha & Omega Semiconductor	MOSFET P-CH 30V 7A 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	13267In Stock	1000:$0.2346 500:$0.3036 100:$0.4141 10:$0.5520 1:$0.6600
AO4449 DISTI # 785-1199-6-ND	Alpha & Omega Semiconductor	MOSFET P-CH 30V 7A 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	13267In Stock	1000:$0.2346 500:$0.3036 100:$0.4141 10:$0.5520 1:$0.6600
AO4449 DISTI # 785-1199-2-ND	Alpha & Omega Semiconductor	MOSFET P-CH 30V 7A 8SOIC RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	9000In Stock	30000:$0.1782 15000:$0.1809 6000:$0.1943 3000:$0.2077
AO4449L DISTI # AO4449L-ND	Alpha & Omega Semiconductor	MOSFET P-CH 30V 7A 8SOIC RoHS: Compliant Container: Bulk	Limited Supply - Call

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AO4449

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes