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IRFB41N15DPBF

IRFB41N15DPBF
Mfr. #:
IRFB41N15DPBF
Fabricante:
Infineon / IR
Descripción:
MOSFET 150V 1 N-CH HEXFET 45mOhms 72nC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRFB41N15DPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
150 V
Id - Corriente de drenaje continua:
41 A
Rds On - Resistencia de la fuente de drenaje:
45 mOhms
Vgs th - Voltaje umbral puerta-fuente:
5.5 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
72 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
200 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Altura:
15.65 mm
Longitud:
10 mm
Tipo de transistor:
1 N-Channel
Escribe:
MOSFET de potencia HEXFET
Ancho:
4.4 mm
Marca:
Infineon / IR
Transconductancia directa - Mín .:
18 S
Otoño:
14 ns
Tipo de producto:
MOSFET
Hora de levantarse:
63 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
25 ns
Tiempo típico de retardo de encendido:
16 ns
Parte # Alias:
SP001575564
Unidad de peso:
0.211644 oz
Tags
IRFB41N, IRFB41, IRFB4, IRFB, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.045Ohm;ID 41A;TO-220AB;PD 200W;VGS +/-30V
***ure Electronics
Single N-Channel 150 V 0.045 Ohm 72 nC HEXFET® Power Mosfet - TO-220-3
***ernational Rectifier
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
***trelec
MOSFET Operating temperature: -55...+175 °C Housing type: TO-220AB Polarity: N Power dissipation: 200 W
***p One Stop Japan
Trans MOSFET N-CH 150V 41A 3-Pin(3+Tab) TO-220AB Tube
***ical
Trans MOSFET N-CH 150V 41A 3-Pin(3+Tab) TO-220AB
***eco
150V 41A SINGLE N-CHANNEL HEXFET POWER MOSFET IN A SO<AZ
*** Source Electronics
MOSFET N-CH 150V 41A TO-220AB
***ukat
N-Ch 150V 41A 200W 0,045R TO220AB
***ronik
N-CH 150V 41A 45mOhm TO220AB
***ark
Planar_Mosfets Rohs Compliant: Yes
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***nell
MOSFET, N, 150V, 41A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:150V; Current, Id Cont:41A; Resistance, Rds On:0.045ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5.5V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:164A; No. of Pins:3; Power Dissipation:200W; Power, Pd:200W; Thermal Resistance, Junction to Case A:0.75°C/W; Voltage, Vds Max:150V; Voltage, Vgs th Max:5.5V
***ment14 APAC
MOSFET, N, 150V, 41A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:41A; Drain Source Voltage Vds:150V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:41A; Junction to Case Thermal Resistance A:0.75°C/W; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:164A; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5.5V
Parte # Mfg. Descripción Valores Precio
IRFB41N15DPBF
DISTI # V36:1790_13891133		Infineon Technologies AGTrans MOSFET N-CH 150V 41A 3-Pin(3+Tab) TO-220AB Tube716
  • 10000:$0.8949
  • 5000:$0.9122
  • 2000:$0.9387
  • 1000:$0.9635
  • 500:$0.9920
  • 100:$1.1106
  • 10:$1.4453
  • 1:$1.5707
IRFB41N15DPBF
DISTI # IRFB41N15DPBF-ND		Infineon Technologies AGMOSFET N-CH 150V 41A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		1105In Stock
  • 1000:$1.1963
  • 500:$1.4438
  • 100:$1.8563
  • 10:$2.3100
  • 1:$2.5600
IRFB41N15DPBF
DISTI # 27490136		Infineon Technologies AGTrans MOSFET N-CH 150V 41A 3-Pin(3+Tab) TO-220AB Tube2280
  • 500:$0.8160
  • 100:$0.9024
  • 16:$0.9600
IRFB41N15DPBF
DISTI # 26899099		Infineon Technologies AGTrans MOSFET N-CH 150V 41A 3-Pin(3+Tab) TO-220AB Tube716
  • 9:$0.9117
IRFB41N15DPBF
DISTI # IRFB41N15DPBF		Infineon Technologies AGTrans MOSFET N-CH 150V 41A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB41N15DPBF)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 683
  • 1:$1.2519
  • 10:$1.1899
  • 25:$1.1869
  • 50:$1.1839
  • 100:$0.9079
  • 500:$0.9009
  • 1000:$0.8109
IRFB41N15DPBF
DISTI # 38K2489		Infineon Technologies AGMOSFET Transistor, N Channel, 41 A, 150 V, 45 mohm, 10 V, 5.5 V RoHS Compliant: Yes303
  • 1:$2.2100
  • 10:$1.8800
  • 100:$1.5000
  • 500:$1.3200
  • 1000:$1.0900
  • 2500:$1.0200
  • 5000:$0.9760
IRFB41N15DPBF.
DISTI # 27AC6765		Infineon Technologies AGPLANAR_MOSFETS ROHS COMPLIANT: YES0
  • 1:$2.2100
  • 10:$1.8800
  • 100:$1.5000
  • 500:$1.3200
  • 1000:$1.0900
  • 2500:$1.0200
  • 5000:$0.9760
IRFB41N15DPBF
DISTI # 70017492		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 150V,RDS(ON) 0.045Ohm,ID 41A,TO-220AB,PD 200W,VGS +/-30V
RoHS: Compliant		0
  • 250:$3.2200
  • 500:$3.1560
  • 1250:$3.0590
  • 2500:$2.9300
  • 6250:$2.7370
IRFB41N15DPBFInfineon Technologies AGSingle N-Channel 150 V 0.045 Ohm 72 nC HEXFET Power Mosfet - TO-220-3
RoHS: Compliant		303Tube
  • 10:$1.2000
  • 100:$1.0900
  • 500:$0.9500
IRFB41N15DPBF
DISTI # 942-IRFB41N15DPBF		Infineon Technologies AGMOSFET 150V 1 N-CH HEXFET 45mOhms 72nC
RoHS: Compliant		1034
  • 1:$2.2100
  • 10:$1.8800
  • 100:$1.5000
  • 500:$1.3200
  • 1000:$1.0900
  • 2000:$1.0200
  • 5000:$0.9760
IRFB41N15DPBF
DISTI # IRFB41N15DPBF		Infineon Technologies AGTransistor: N-MOSFET,unipolar,150V,41A,200W,TO220AB226
  • 1:$1.4000
  • 3:$1.2700
  • 10:$1.0500
  • 100:$0.9200
IRFB41N15DPBFInternational Rectifier 
RoHS: Compliant		Europe - 2038
    IRFB41N15DPBF
    DISTI # IRFB41N15DPBF    		Infineon Technologies AGN-Ch 150V 41A 200W 0,045R TO220AB
    RoHS: Compliant    		20
    • 10:€1.0200
    • 50:€0.7175
    • 200:€0.6175
    • 500:€0.5945
    IRFB41N15DPBF
    DISTI # C1S327400158336    		Infineon Technologies AGTrans MOSFET N-CH 150V 41A 3-Pin(3+Tab) TO-220AB Tube
    RoHS: Compliant    		1035
    • 500:$1.6100
    • 200:$1.8400
    • 100:$1.8600
    • 50:$1.8900
    • 10:$2.3200
    • 1:$2.8500
    IRFB41N15DPBF
    DISTI # C1S322000488669    		Infineon Technologies AGTrans MOSFET N-CH 150V 41A 3-Pin(3+Tab) TO-220AB Tube
    RoHS: Compliant    		2282
    • 1000:$0.8710
    • 200:$1.1300
    • 100:$1.2300
    • 50:$1.5000
    • 10:$1.6900
    • 1:$4.6400
    IRFB41N15DPBF
    DISTI # 8648760    		Infineon Technologies AGMOSFET, N, 150V, 41A, TO-220
    RoHS: Compliant    		308
    • 5:£1.5600
    • 25:£1.4500
    • 100:£1.1600
    • 250:£1.0900
    • 500:£1.0200
    IRFB41N15DPBF
    DISTI # 8648760    		Infineon Technologies AGMOSFET, N, 150V, 41A, TO-220
    RoHS: Compliant    		303
    • 1:$3.5000
    • 10:$2.9800
    • 100:$2.3800
    • 500:$2.0900
    • 1000:$1.7300
    • 2000:$1.6200
    • 5000:$1.5500
    • 10000:$1.4900
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    Disponibilidad
    Valores:
    Available
    En orden:
    1984
    Ingrese la cantidad:
    El precio actual de IRFB41N15DPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    2,21 US$
    2,21 US$
    10
    1,88 US$
    18,80 US$
    100
    1,50 US$
    150,00 US$
    500
    1,32 US$
    660,00 US$
    1000
    1,09 US$
    1 090,00 US$
    2000
    1,02 US$
    2 040,00 US$
    5000
    0,98 US$
    4 880,00 US$
    10000
    0,94 US$
    9 380,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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