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GC08MPS12-252

GC08MPS12-252
Mfr. #:
GC08MPS12-252
Fabricante:
GeneSiC Semiconductor
Descripción:
Schottky Diodes & Rectifiers Silicon Carbide (SiC) Merged PiN Schottky (MPS) Diode 1200V 8A TO-252-2
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
GC08MPS12-252 Ficha de datos
Entrega:
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Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
GC08MPS12-252 más información
Atributo del producto
Valor de atributo
Fabricante:
Semiconductor GeneSiC
Categoria de producto:
Diodos y rectificadores Schottky
RoHS:
Y
Producto:
Diodos de carburo de silicio Schottky
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-252-2
Si - Corriente directa:
40 A
Vrrm - Voltaje inverso repetitivo:
1200 V
Vf - Voltaje directo:
1.5 V
Ifsm - Corriente de sobretensión directa:
65 A
Configuración:
Único
Tecnología:
Sic
Ir - Corriente inversa:
0.7 uA
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Embalaje:
Carrete
Marca:
Semiconductor GeneSiC
Pd - Disipación de energía:
272 W
Tipo de producto:
Diodos y rectificadores Schottky
Cantidad de paquete de fábrica:
2500
Subcategoría:
Diodes & Rectifiers
Vr - Voltaje inverso:
1200 V
Tags
GC08, GC0
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
1200V & 1700V SiC MPS Schottky Diodes
GeneSiC Semiconductor 1200V and 1700V SiC MPS Schottky Diodes provide low standby power losses and improved circuit efficiency. The 1200V SiC Diodes have a forward current range of 1A to 200A. The 1700V SiC Diodes have a forward current range of 5A to 50A. Both the 1200V and 1700V Schottky Diodes offer the advantage of paralleling devices without a thermal runaway. Additional features include low reverse recovery current, low device capacitance, and low reverse leakage current. The SiC MPS Schottky Diodes are ideal for a wide range of applications including LED lighting, medical imaging systems, high voltage sensing, and electric vehicles.
Imagen Parte # Descripción
GC08MPS12-220

Mfr.#: GC08MPS12-220

OMO.#: OMO-GC08MPS12-220

 Schottky Diodes & Rectifiers Silicon Carbide (SiC) Merged PiN Schottky (MPS) Diode 1200V 8A TO-220-2
GC08MPS12-252

Mfr.#: GC08MPS12-252

OMO.#: OMO-GC08MPS12-252

 Schottky Diodes & Rectifiers Silicon Carbide (SiC) Merged PiN Schottky (MPS) Diode 1200V 8A TO-252-2
Disponibilidad
Valores:
Available
En orden:
4000
Ingrese la cantidad:
El precio actual de GC08MPS12-252 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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