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IRG4BC40WPBF

IRG4BC40WPBF
Mfr. #:
IRG4BC40WPBF
Fabricante:
Infineon / IR
Descripción:
IGBT Transistors 600V Warp 60-150kHz
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRG4BC40WPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRG4BC40WPBF DatasheetIRG4BC40WPBF Datasheet (P4-P6)IRG4BC40WPBF Datasheet (P7-P8)
ECAD Model:
Más información:
IRG4BC40WPBF más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-220-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
600 V
Voltaje de saturación colector-emisor:
2.5 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
40 A
Pd - Disipación de energía:
160 W
Temperatura mínima de funcionamiento:
- 55 C
Embalaje:
Tubo
Altura:
8.77 mm
Longitud:
10.54 mm
Ancho:
4.69 mm
Marca:
Infineon / IR
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
1000
Subcategoría:
IGBT
Parte # Alias:
SP001541318
Unidad de peso:
0.211644 oz
Tags
IRG4BC40W, IRG4BC4, IRG4BC, IRG4B, IRG4, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(3+Tab) TO-220AB Tube
***ineon SCT
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHS
***ure Electronics
IRG4BC40WPBF Series 600 V 20 A N-Channel Latest Generation IGBT - TO-220AB
***ineon
Target Applications: Air Conditioner; Dishwasher; Fan; PFC; Pump; Washing Machine
*** Stop Electro
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, TO-220; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 160W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; MSL: -; SVHC: No SVHC (27-Jun-2018); Cur
***ment14 APAC
IGBT, TO-220; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Current Temperature:25°C; Fall Time Max:74ns; Fall Time tf:74ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:160A; Rise Time:22ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
*** Electronics
IGBT IRG4BC40UPBF IGBT 600V 40A 160W Through Hole TO-220AB 20A/600V TO-220AB
***p One Stop
Trans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(3+Tab) TO-220AB Tube
***ineon SCT
600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHS
***ure Electronics
IRG4BC40UPbF Series 600 V 20 A N-Channel Ultrafast Speed IGBT - TO-220AB
***ineon
Target Applications: Air Conditioner; Dishwasher; Fan; PFC; Pump; Washing Machine
***itex
Transistor; IGBT; 600V; 40A; 160W; -55+150 deg.C; THT; TO220
***roFlash
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ment14 APAC
IGBT, TO-220; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Current Temperature:25°C; Device Marking:IRG4BC40UPBF; Fall Time tf:180ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:160A; Rise Time:19ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***p One Stop Global
Trans IGBT Chip N-CH 600V 49A 160000mW 3-Pin(3+Tab) TO-220AB Tube
***eco
Transistor IGBT Chip Negative Channel 600 Volt 49A 3-Pin(3+Tab) TO-220AB
***ure Electronics
IRG4BC40FPbF Series 600 V 27 A N-Channel Fast Speed IGBT - TO-220AB
***ineon SCT
600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHS
*** Stop Electro
Insulated Gate Bipolar Transistor, 49A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***trelec
IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.5 V Current release time: 170 ns Power dissipation: 160 W
***ment14 APAC
IGBT, TO-220; Transistor Type:IGBT; DC Collector Current:49A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:49A; Current Temperature:25°C; Fall Time Max:170ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:200A; Rise Time:18ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***(Formerly Allied Electronics)
Transistor; N-Channel IGBT; TO-220AB; 42 A (Max.); 600 V (Max.); 160 W (Max.)
***ineon SCT
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHS
***ow.cn
Trans IGBT Chip N-CH 600V 42A 160000mW 3-Pin(3+Tab) TO-220AB Tube
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:42A; Collector Emitter Saturation Voltage, Vce(sat):2.6V; Power Dissipation, Pd:160W; Package/Case:TO-220AB ;RoHS Compliant: Yes
***nell
IGBT, 600V, 42A, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:42A; Voltage, Vce Sat Max:2.1V; Power Dissipation:160W; Case Style:TO-220; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:84A; No. of Pins:3; Power, Pd:160W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:210ns; Time, Fall Max:210ns; Time, Fall Typ:150ns; Time, Rise:18ns; Time, Short Circuit Withstand Min:10µs; Transistors, No. of:1
*** Source Electronics
Trans IGBT Chip N-CH 600V 34A 125000mW 3-Pin(3+Tab) TO-220 Tube / IGBT 600V 34A 125W TO220AB
***ure Electronics
HGTP7N60A4 Series 600 V 34 A Flange Mount SMPS N-Channel IGBT-TO-220AB
***r Electronics
Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ment14 APAC
IGBT, N, TO-220; Transistor Type:IGBT; DC Collector Current:34A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:125W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:34A; Current Temperature:25°C; Fall Time tf:45ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220AB; Pin Format:GCE; Power Dissipation Max:125W; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Power Dissipation Ptot Max:125W; Pulsed Current Icm:56A; Rise Time:11ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***rchild Semiconductor
The HGTP7N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
300-1200V IGBTs
Infineon Rectifier has an extensive portfolio of IGBTs that ranges from 300V to 1200V and achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. International Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.Learn More
Parte # Mfg. Descripción Valores Precio
IRG4BC40WPBF
DISTI # 32637315		Infineon Technologies AGTrans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		1248
  • 500:$1.6020
  • 100:$1.6731
  • 10:$1.9701
IRG4BC40WPBF
DISTI # IRG4BC40WPBF-ND		Infineon Technologies AGIGBT 600V 40A 160W TO220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		343In Stock
  • 1000:$2.1165
  • 500:$2.5096
  • 100:$2.9480
  • 10:$3.5980
  • 1:$4.0100
IRG4BC40WPBF
DISTI # V36:1790_13892159		Infineon Technologies AGTrans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		0
    IRG4BC40WPBF
    DISTI # IRG4BC40WPBF    		Infineon Technologies AGTrans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: IRG4BC40WPBF)
    Min Qty: 202
    Container: Bulk    		Americas - 0
    • 2020:$1.4900
    • 606:$1.5900
    • 1010:$1.5900
    • 404:$1.6900
    • 202:$1.7900
    IRG4BC40WPBF
    DISTI # IRG4BC40WPBF    		Infineon Technologies AGTrans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRG4BC40WPBF)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tube    		Americas - 0
    • 10000:$1.7592
    • 6000:$1.7911
    • 4000:$1.8534
    • 2000:$1.9229
    • 1000:$1.9950
    IRG4BC40WPBF
    DISTI # SP001541318    		Infineon Technologies AGTrans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB (Alt: SP001541318)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1000:€1.3900
    • 500:€1.4900
    • 100:€1.5900
    • 25:€1.6900
    • 50:€1.6900
    • 10:€1.7900
    • 1:€1.9900
    IRG4BC40WPBF
    DISTI # 97K2289    		Infineon Technologies AGIGBT Single Transistor, 40 A, 2.5 V, 160 W, 600 V, TO-220AB, 3 RoHS Compliant: Yes1800
    • 500:$2.4100
    • 250:$2.6900
    • 100:$2.8300
    • 50:$2.9800
    • 25:$3.1200
    • 10:$3.2700
    • 1:$3.8500
    IRG4BC40WPBF.
    DISTI # 27AC6930    		Infineon Technologies AGDC Collector Current:40A,Collector Emitter Saturation Voltage Vce(on):2.5V,Power Dissipation Pd:160W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,Product Range:-,MSL:- RoHS Compliant: Yes0
    • 500:$2.4100
    • 250:$2.6900
    • 100:$2.8300
    • 50:$2.9800
    • 25:$3.1200
    • 10:$3.2700
    • 1:$3.8500
    IRG4BC40WPBF
    DISTI # 70411440    		Infineon Technologies AGIRG4BC40WPBF,40 A 600 V,3-Pin TO-220AB
    RoHS: Compliant    		0
    • 1:$5.0200
    IRG4BC40WPBF
    DISTI # 942-IRG4BC40WPBF    		Infineon Technologies AGIGBT Transistors 600V Warp 60-150kHz
    RoHS: Compliant    		338
    • 1:$3.8100
    • 10:$3.2400
    • 100:$2.8000
    • 250:$2.6600
    • 500:$2.3900
    • 1000:$2.0100
    • 2000:$1.9100
    IRG4BC40WPBFInternational RectifierInsulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
    RoHS: Compliant    		13
    • 1000:$1.6300
    • 500:$1.7200
    • 100:$1.7900
    • 25:$1.8700
    • 1:$2.0100
    IRG4BC40WPBF
    DISTI # 5411477    		Infineon Technologies AGTRANSISTOR IGBT N-CH 600V 40A TO220AB, EA625
    • 500:£1.5100
    • 250:£1.6500
    • 100:£1.7200
    • 25:£2.0200
    • 1:£3.4200
    IRG4BC40WPBF
    DISTI # IRG4BC40WPBF    		Infineon Technologies AGTransistor: IGBT,600V,40A,160W,TO220AB99
    • 1:$2.9900
    • 3:$2.6400
    • 10:$2.3700
    • 50:$2.2100
    IRG4BC40WPBF
    DISTI # 9105026    		Infineon Technologies AGIGBT, TO-220
    RoHS: Compliant    		1800
    • 500:$3.6800
    • 250:$4.1000
    • 100:$4.3100
    • 10:$4.9800
    • 1:$5.8600
    IRG4BC40WPBF
    DISTI # 9105026    		Infineon Technologies AGIGBT, TO-2201900
    • 500:£1.9100
    • 250:£2.1100
    • 100:£2.2200
    • 10:£2.5700
    • 1:£3.4000
    IRG4BC40WPBF
    DISTI # XSKDRABS0006923    		Infineon Technologies AGPower Field-EffectTransistor,75AI(D),100V,0.01ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET
    RoHS: Compliant    		2250 in Stock0 on Order
    • 2250:$2.5560
    • 300:$2.7360
    IRG4BC40WPBFInternational Rectifier 
    RoHS: Compliant    		Europe - 76
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      Disponibilidad
      Valores:
      256
      En orden:
      2239
      Ingrese la cantidad:
      El precio actual de IRG4BC40WPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      3,81 US$
      3,81 US$
      10
      3,24 US$
      32,40 US$
      100
      2,80 US$
      280,00 US$
      250
      2,66 US$
      665,00 US$
      500
      2,39 US$
      1 195,00 US$
      1000
      2,01 US$
      2 010,00 US$
      2000
      1,91 US$
      3 820,00 US$
      5000
      1,84 US$
      9 200,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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