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IRFHS8242TRPBF

IRFHS8242TRPBF
Mfr. #:
IRFHS8242TRPBF
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 25V 9.9A PQFN
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRFHS8242TRPBF Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
IRFHS8242TRPBF más información
Atributo del producto
Valor de atributo
Fabricante
Rectificador internacional
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Carrete
Estilo de montaje
SMD / SMT
Paquete-Estuche
PQFN-6
Tecnología
Si
Número de canales
1 Channel
Configuración
Drenaje quíntuple simple de doble fuente
Tipo transistor
1 N-Channel
Disipación de potencia Pd
2.1 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
5.3 ns
Hora de levantarse
19 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
9.9 A
Vds-Drain-Source-Breakdown-Voltage
25 V
Vgs-th-Gate-Source-Threshold-Voltage
1.8 V
Resistencia a la fuente de desagüe de Rds
17 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
5.4 ns
Tiempo de retardo de encendido típico
6.5 ns
Qg-Gate-Charge
4.3 nC
Transconductancia directa-Mín.
19 S
Tags
IRFHS8242TRP, IRFHS82, IRFHS8, IRFHS, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 25 V 21 mOhm 4.3 nC HEXFET® Power Mosfet - PQFN 2 x 2 mm
***ineon SCT
25V Single N-Channel HEXFET Power MOSFET in a 2mm X 2mm PQFN package, PG-TSDSON-6, RoHS
***ment14 APAC
N CH MOSFET, 25V, 9.9A, 6-PQFN; Transist; N CH MOSFET, 25V, 9.9A, 6-PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:9.9A; Drain Source Voltage Vds:25V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; No. of Pins:6
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Profile (less than 1.0 mm); Compatible with Existing Surface Mount Techniques; Low Junction to PCB Thermal Resistance; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; DC Switches; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch; Load Switch High Side; Load Switch Low Side; MultiPhase ControlFET; Point of Load ControlFET
Wireless Charging Solutions
Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.
Ultra Compact PQFN HEXFET® Power MOSFETs
Infineon Ultra Compact PQFN HEXFET® Power MOSFETs deliver an ultra-compact, high density and efficient solution for a wide variety of lower power applications including smart phones, tablet PCs, camcorders, digital still cameras, notebook PC, server and network communications equipment. These Ultra Compact PQFN HEXFET® Power MOSFETs come in a 2x2mm package and are available in 20 V, 25 V and 30 V with standard or logic level gate drive. They utilize Infineon latest low voltage N-Channel and P-Channel silicon technologies to offer very low on-resistance (RDS(on)), and high power density.Learn More
Inductive Wireless Charging Solutions
Infineon Technologies Inductive Wireless Charging Solutions use electromagnetic fields to transfer power from a transmitter to a receiver application. This technology charges batteries without a physical connection, all thanks to a wireless charging power supply. The benefits for wireless charging in applications are not having to plug in a device and no plug compatibility issues. It’s also safer since there is no contact with exposed electrical connectors. Wireless charging is more reliable in harsher environments, like drilling and mining. It also allows for seamless on-the-go charging whether in the car or in public places. Finally, it eliminates tangled charging cables while charging multiple devices in parallel.
Parte # Mfg. Descripción Valores Precio
IRFHS8242TRPBF
DISTI # C1S327400181699		Infineon Technologies AGTrans MOSFET N-CH 25V 9.9A 6-Pin PQFN EP T/R
RoHS: Compliant		3950
  • 25:$0.1470
IRFHS8242TRPBF
DISTI # IRFHS8242TRPBF-ND		Infineon Technologies AGMOSFET N-CH 25V 9.9A PQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 4000:$0.1918
IRFHS8242TRPBF
DISTI # IRFHS8242TRPBF		Infineon Technologies AGTrans MOSFET N-CH 25V 9.9A 6-Pin PQFN EP T/R - Tape and Reel (Alt: IRFHS8242TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 4000:$0.1399
  • 8000:$0.1389
  • 16000:$0.1389
  • 24000:$0.1379
  • 40000:$0.1379
IRFHS8242TRPBF
DISTI # IRFHS8242TRPBF		Infineon Technologies AGTrans MOSFET N-CH 25V 9.9A 6-Pin PQFN EP T/R (Alt: IRFHS8242TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Asia - 0
    IRFHS8242TRPBF
    DISTI # SP001554858    		Infineon Technologies AGTrans MOSFET N-CH 25V 9.9A 6-Pin PQFN EP T/R (Alt: SP001554858)
    RoHS: Compliant
    Min Qty: 4000
    Container: Tape and Reel    		Europe - 0
    • 4000:€0.2169
    • 8000:€0.1679
    • 16000:€0.1379
    • 24000:€0.1159
    • 40000:€0.1079
    IRFHS8242TRPBF
    DISTI # 13AC9104    		Infineon Technologies AGMOSFET, N-CH, 25V, 8.5A, PQFN,Transistor Polarity:N Channel,Continuous Drain Current Id:8.5A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.01ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V,Power Dissipation RoHS Compliant: Yes3473
    • 1:$0.4900
    • 10:$0.4070
    • 25:$0.3540
    • 50:$0.3010
    • 100:$0.2480
    • 250:$0.2290
    • 500:$0.2110
    • 1000:$0.1920
    IRFHS8242TRPBF.
    DISTI # 32AC0691    		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:8.5A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.01ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V,Power Dissipation Pd:2.1W,No. of Pins:8Pins RoHS Compliant: Yes0
      IRFHS8242TRPBF
      DISTI # 70599963      		Infineon Technologies AGIRFHS8242TRPBF N-channel MOSFET Transistor,21 A,25 V,6-Pin PQFN
      RoHS: Compliant      		0
      • 100:$0.3700
      IRFHS8242TRPBFInfineon Technologies AGSingle N-Channel 25 V 21 mOhm 4.3 nC HEXFET Power Mosfet - PQFN 2 x 2 mm
      RoHS: Compliant      		4000Reel
      • 4000:$0.1410
      IRFHS8242TRPBFInternational Rectifier 
      RoHS: Not Compliant      		8000
      • 500:$0.1500
      • 1000:$0.1500
      • 100:$0.1600
      • 25:$0.1700
      • 1:$0.1800
      IRFHS8242TRPBF
      DISTI # 942-IRFHS8242TRPBF      		Infineon Technologies AGMOSFET 25V 1 N-CH HEXFET 13mOhms 4.3nC
      RoHS: Compliant      		5119
      • 1:$0.4900
      • 10:$0.4070
      • 100:$0.2480
      • 1000:$0.1920
      • 4000:$0.1640
      IRFHS8242TRPBFInternational Rectifier9.9A, 25V, 0.013OHM, N-CHANNEL, SI, POWER, MOSFET4
      • 1:$0.3800
      IRFHS8242TRPBF
      DISTI # 2725944      		Infineon Technologies AGMOSFET, N-CH, 25V, 8.5A, PQFN
      RoHS: Compliant      		3473
      • 1:$0.7750
      • 10:$0.6440
      • 100:$0.3930
      • 1000:$0.3040
      • 4000:$0.2600
      IRFHS8242TRPBF
      DISTI # 2725944      		Infineon Technologies AGMOSFET, N-CH, 25V, 8.5A, PQFN
      RoHS: Compliant      		3473
      • 5:£0.4420
      • 25:£0.1340
      • 100:£0.1310
      Imagen Parte # Descripción
      IRFHS8242TRPBF

      Mfr.#: IRFHS8242TRPBF

      OMO.#: OMO-IRFHS8242TRPBF

      		 MOSFET 25V 1 N-CH HEXFET 13mOhms 4.3nC
      IRFHS8242TRPBF-CUT TAPE

      Mfr.#: IRFHS8242TRPBF-CUT TAPE

      OMO.#: OMO-IRFHS8242TRPBF-CUT-TAPE-1190

      		 Nuevo y original
      IRFHS8242TR2PBF

      Mfr.#: IRFHS8242TR2PBF

      OMO.#: OMO-IRFHS8242TR2PBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 25V 9.9A PQFN
      IRFHS8242TRPBF.

      Mfr.#: IRFHS8242TRPBF.

      OMO.#: OMO-IRFHS8242TRPBF--1190

      		 Transistor Polarity:N Channel, Continuous Drain Current Id:8.5A, Drain Source Voltage Vds:25V, On Resistance Rds(on):0.01ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.8V, Power Diss
      IRFHS8242TRPBF

      Mfr.#: IRFHS8242TRPBF

      OMO.#: OMO-IRFHS8242TRPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 25V 9.9A PQFN
      Disponibilidad
      Valores:
      Available
      En orden:
      2000
      Ingrese la cantidad:
      El precio actual de IRFHS8242TRPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,16 US$
      0,16 US$
      10
      0,15 US$
      1,48 US$
      100
      0,14 US$
      14,01 US$
      500
      0,13 US$
      66,15 US$
      1000
      0,12 US$
      124,60 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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