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H5N3011P-E

H5N3011P-E
Mfr. #:
H5N3011P-E
Fabricante:
RENESAS
Descripción:
Trans MOSFET N-CH 300V 88A 3-Pin(3+Tab) TO-3P Magazine
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
H5N3011P-E Ficha de datos
Entrega:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
RENESAS
categoria de producto
Chips de IC
Tags
H5N3011P, H5N301, H5N30, H5N3, H5N
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH Si 300V 88A 3-Pin(3+Tab) TO-3P Tube
***ponent Stockers USA
88 A 300 V 0.048 ohm N-CHANNEL Si POWER MOSFET
***egrated Device Technology
Nch Single Power Mosfet 300V 88A 48Mohm To-3P
***icroelectronics
N-Channel 30V - 0.0056Ohm - 90A - TO-220 LOOhm GATE CHARGE StripFET(TM) II POWER MOSFET
*** Source Electronics
Trans MOSFET N-CH 30V 90A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 30V 90A TO-220
***ure Electronics
Single N-Channel 30 V 150 W 47 nC Silicon Through Hole Mosfet - TO-220-3
***enic
30V 90A 150W 6.5m´Î@10V45A 2.5V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***ponent Stockers USA
90 A 30 V 0.0065 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***r Electronics
Power Field-Effect Transistor, 90A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***icroelectronics
N-channel 100 V, 5.1 mOhm typ., 110 A STripFET F7 Power MOSFET in TO-220 package
***r Electronics
Power Field-Effect Transistor, 110A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 100V 110A 3-Pin(3+Tab) TO-220AB Tube
***ark
MOSFET, N-CH, 100V, 110A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:110A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes
***icroelectronics
N-channel 55 V, 4.5 mOhm typ., 110 A STripFET F6 Power MOSFET in a TO-220 package
***ure Electronics
Single N-Channel 55 V 150 W 126 nC Silicon Through Hole Mosfet - TO-220-3
***r Electronics
Power Field-Effect Transistor, 110A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***et
Trans MOSFET N-CH 55V 110A 3-Pin(3+Tab) TO-220AB Tube
***ical
Trans MOSFET N-CH 55V 100A 3-Pin(3+Tab) TO-220AB Rail
***Yang
MOSFET N-CH 55V 100A TO-220 - Bulk
*** Electronic Components
MOSFET 55V N-Channel PowerTrench
***ark
RAIL / N-CH/55V 100A High Qg PT3
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.01Ohm;ID 89A;TO-220AB;PD 170W;VGS +/-16V
***fin
Transistor NPN Field Effect IRL3705/IRL3705N INTERNATIONAL RECTIFIER Ampere=89 V=55 TO220
***ure Electronics
Single N-Channel 55 V 0.012 Ohm 98 nC HEXFET® Power Mosfet - TO-220-3
***eco
MOSFET, 55V, 77A, 10 MOHM, 65.3 NC QG, LOGIC LEVEL, TO
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 89A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:89A; On Resistance, Rds(on):10mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N LOGIC TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:77A; Drain Source Voltage Vds:55V; On Resistance Rds(on):10mohm; Power Dissipation Pd:130W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:89A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:130W; Power Dissipation Pd:130W; Pulse Current Idm:310A; Voltage Vgs th Max:2.5V
***ure Electronics
Single N-Channel 60 V 2.9 mOhm 56 nC OptiMOS™ Power Mosfet - TO-220-3
***nell
MOSFET, N CH, 60V, 100A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0027ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V;
*** Stop Electro
Power Field-Effect Transistor, 24A I(D), 60V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon SCT
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO220-3, RoHS
***ineon
OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
Parte # Mfg. Descripción Valores Precio
H5N3011P-E
DISTI # 30616047		Renesas Electronics CorporationTrans MOSFET N-CH 300V 88A 3-Pin(3+Tab) TO-3P Magazine
RoHS: Compliant		148
  • 50:$4.5773
  • 10:$4.6665
  • 4:$6.4260
H5N3011P-E
DISTI # C1S620200381952		Renesas Electronics CorporationTrans MOSFET N-CH Si 300V 88A 3-Pin(3+Tab) TO-3P Tube
RoHS: Compliant		148
  • 50:$3.5900
  • 10:$3.6600
  • 1:$5.0400
Imagen Parte # Descripción
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Mfr.#: H5N3003P

OMO.#: OMO-H5N3003P-1190

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Mfr.#: H5N3003P,5N3003

OMO.#: OMO-H5N3003P-5N3003-1190

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Mfr.#: H5N3003P91-E

OMO.#: OMO-H5N3003P91-E-1190

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Mfr.#: H5N3004P-E

OMO.#: OMO-H5N3004P-E-1190

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Mfr.#: H5N3007CF

OMO.#: OMO-H5N3007CF-1190

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H5N3007LSTL-E

Mfr.#: H5N3007LSTL-E

OMO.#: OMO-H5N3007LSTL-E-1190

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H5N3011

Mfr.#: H5N3011

OMO.#: OMO-H5N3011-1190

 Nuevo y original
H5N3011P

Mfr.#: H5N3011P

OMO.#: OMO-H5N3011P-1190

 Nuevo y original
H5N3011P-E

Mfr.#: H5N3011P-E

OMO.#: OMO-H5N3011P-E-1190

 Trans MOSFET N-CH 300V 88A 3-Pin(3+Tab) TO-3P Magazine
H5N3011P80

Mfr.#: H5N3011P80

OMO.#: OMO-H5N3011P80-1190

 Nuevo y original
Disponibilidad
Valores:
Available
En orden:
2500
Ingrese la cantidad:
El precio actual de H5N3011P-E es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
5,38 US$
5,38 US$
10
5,12 US$
51,16 US$
100
4,85 US$
484,65 US$
500
4,58 US$
2 288,65 US$
1000
4,31 US$
4 308,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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