A2G35S160-01SR3

A2G35S160-01SR3
Mfr. #:
A2G35S160-01SR3
Fabricante:
NXP / Freescale
Descripción:
RF Amplifier A2G35S160-01S/CFM2F///REEL 13 Q1 NDP
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
A2G35S160-01SR3 Ficha de datos
Entrega:
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HTML Datasheet:
A2G35S160-01SR3 DatasheetA2G35S160-01SR3 Datasheet (P4-P6)A2G35S160-01SR3 Datasheet (P7-P9)A2G35S160-01SR3 Datasheet (P10)
ECAD Model:
Más información:
A2G35S160-01SR3 más información
Atributo del producto
Valor de atributo
Fabricante:
IDT (tecnología de dispositivo integrado)
Categoria de producto:
Amplificador de RF
RoHS:
Y
Paquete / Caja:
VFQFPN-32
Serie:
F1240
Embalaje:
Carrete
Marca:
IDT
Tipo de producto:
Amplificador de RF
Cantidad de paquete de fábrica:
2500
Subcategoría:
Circuitos integrados inalámbricos y RF
Nombre comercial:
Ruido plano
Parte # Alias:
IDTF1240
Tags
A2G3, A2G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Airfast Rf Power Gan Transistor, 3400-3800 Mhz, 32 W Avg., 48 V
***W
RF Power Transistor,3400 to 3600 MHz, 126 W, Typ Gain in dB is 15.7 @ 3500 MHz, 48 V, GaN, SOT1828
***et Europe
RF Power GaN Transistor 3400-3600MHz 32W 48V Airfast
NXP RF-IF Solutions
NXP RF-IF Solutions meet the needs of the most demanding RF applications by allowing designers to meet the highest specifications for performance while still retaining potential trade-offs with respect to efficiency, power, ruggedness, consistency, and integration levels. The NXP RF-IF portfolio covers the majority of communication and transmission systems, making it easy to find a solution that matches a designer's particular requirements. NXP RF-IF solutions include the SA6xx Series RF/IF building blocks that are ideal for a variety of niche handheld RF products. Available in small-footprint packages, SA6xx solutions save PCB space while providing better RF performance.Learn More
RF Power GaN Portfolio
NXP Semiconductors RF Power Gallium Nitride (GaN) Portfolio provides state of the art linearizability and RF performance that enables 5G deployment. These transistors offer solutions for cellular infrastructure, defense, and industrial markets. The GaN transistors provide wideband performance and high-frequency operation. These transistors feature end-to-end applications, solution support, and high-volume production. The GaN transistors come with advanced GaN on SiC technology that offers high power density. These transistors are designed for cellular base station applications.
Parte # Mfg. Descripción Valores Precio
A2G35S160-01SR3
DISTI # A2G35S160-01SR3-ND
NXP SemiconductorsAIRFAST RF POWER GAN TRANSISTOR
RoHS: Not compliant
Min Qty: 250
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 250:$116.3701
A2G35S160-01SR3
DISTI # A2G35S160-01SR3
NXP SemiconductorsRF Power GaN Transistor 3400-3600MHz 32W 48V Airfast - Tape and Reel (Alt: A2G35S160-01SR3)
RoHS: Compliant
Min Qty: 250
Container: Reel
Americas - 0
  • 250:$127.4900
  • 500:$122.4900
  • 1000:$117.6900
  • 1500:$113.3900
  • 2500:$111.2900
A2G35S160-01SR3
DISTI # 841-A2G35S160-01SR3
NXP SemiconductorsRF Amplifier Airfast RF Power GaN Transistor, 3400-3800 MHz, 32 W AVG., 48 V
RoHS: Compliant
0
  • 250:$131.2400
A2G35S160-01SR3
DISTI # A2G35S160-01SR3
NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant
0
  • 250:$135.1000
Imagen Parte # Descripción
A2G35S160-01SR3

Mfr.#: A2G35S160-01SR3

OMO.#: OMO-A2G35S160-01SR3

RF Amplifier A2G35S160-01S/CFM2F///REEL 13 Q1 NDP
A2G35S160-01SR3

Mfr.#: A2G35S160-01SR3

OMO.#: OMO-A2G35S160-01SR3-NXP-SEMICONDUCTORS

RF Amplifier AIRFAST RF POWER GaN TRANSISTOR 3400-3800 MHz, 32 W AVG., 48 V
Disponibilidad
Valores:
Available
En orden:
2000
Ingrese la cantidad:
El precio actual de A2G35S160-01SR3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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