55GN01MA-TL-E

55GN01MA-TL-E
Mfr. #:
55GN01MA-TL-E
Fabricante:
ON Semiconductor
Descripción:
Bipolar Transistors - BJT BIP NPN 70MA 10V FT=5.5G
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
55GN01MA-TL-E Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores bipolares - BJT
RoHS:
Y
Estilo de montaje:
SMD / SMT
Paquete / Caja:
MCPH-3
Polaridad del transistor:
NPN
Voltaje colector-emisor VCEO Max:
10 V
Emisor- Voltaje base VEBO:
3 V
Serie:
55GN01MA
Embalaje:
Carrete
Marca:
EN Semiconductor
Corriente continua del colector:
70 mA
Colector de CC / Ganancia base hfe Min:
200
Pd - Disipación de energía:
400 mW
Tipo de producto:
BJT - Transistores bipolares
Cantidad de paquete de fábrica:
3000
Subcategoría:
Transistores
Tags
55GN01M, 55GN0, 55GN, 55G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
RF Transistor, NPN Single, 10 V, 70 mA, fT = 5.5 GHz
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***ure Electronics
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***ment14 APAC
Transistor, RF, NPN, 10V, 7GHZ, SC-70; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:10V; Transition Frequency ft:7GHz; Power
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TRANS, NPN, 10V, 0.07A, SOT323; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:10V; Typ Gain Bandwidth ft:7GHz; Power Dissipation Pd:150mW; DC Collector Current:70mA; DC Current Gain hFE:180; Transistor Case Style:SOT-323; No. of Pins:3
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NPN RF Bipolar Transistor, 0.07 A, 10 V, 3-Pin SSFP tape & reel
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***Yang
Trans GP BJT NPN 10V 0.07A 3-Pin SSFP T/R - Tape and Reel
***nell
TRANS, NPN, HIGH F, 10V, 0.07A, SSFP; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:10V; Typ Gain Bandwidth ft:7GHz; Power Dissipation Pd:100mW; DC Collector Current:70mA; DC Current Gain hFE:200; Transistor Case Style:SC-81; No. of Pins:3
***emi
RF Transistor, NPN Single MCP, 10 V, 70 mA, fT = 7 GHz
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ON Semi 2SC5226A-5-TL-E NPN RF Bipolar Transistor, 0.07 A, 10 V, 3-Pin MCP | ON Semiconductor 2SC5226A-5-TL-E
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***Yang
Trans GP BJT NPN 10V 0.07A 3-Pin MCP T/R - Tape and Reel
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RF Transistor, 10V, 70mA, fT=7GHz, NPN Single MCP / REEL
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Trans GP BJT NPN 12V 0.08A 3-Pin SOT-23 Emboss T/R
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RF TRANS NPN 12V 7GHZ USM
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Parte # Mfg. Descripción Valores Precio
55GN01MA-TL-E
DISTI # 26735743
ON SemiconductorTrans RF BJT NPN 10V 0.07A 3-Pin Case MCP T/R
RoHS: Compliant
135000
  • 75000:$0.0480
  • 30000:$0.0539
  • 15000:$0.0575
  • 9000:$0.0647
55GN01MA-TL-E
DISTI # 55GN01MA-TL-EOSCT-ND
ON SemiconductorRF TRANS NPN 10V 5.5GHZ 3MCP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
5979In Stock
  • 1000:$0.1003
  • 500:$0.1308
  • 100:$0.1974
  • 10:$0.3490
  • 1:$0.4700
55GN01MA-TL-E
DISTI # 55GN01MA-TL-EOSDKR-ND
ON SemiconductorRF TRANS NPN 10V 5.5GHZ 3MCP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
5979In Stock
  • 1000:$0.1003
  • 500:$0.1308
  • 100:$0.1974
  • 10:$0.3490
  • 1:$0.4700
55GN01MA-TL-E
DISTI # 55GN01MA-TL-EOSTR-ND
ON SemiconductorRF TRANS NPN 10V 5.5GHZ 3MCP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
3000In Stock
  • 75000:$0.0564
  • 30000:$0.0635
  • 15000:$0.0677
  • 6000:$0.0762
  • 3000:$0.0846
55GN01MA-TL-E
DISTI # 55GN01MA-TL-E
ON SemiconductorTrans GP BJT NPN 10V 0.07A 3-Pin MCP T/R - Tape and Reel (Alt: 55GN01MA-TL-E)
RoHS: Compliant
Min Qty: 9000
Container: Reel
Americas - 0
  • 9000:$0.0457
  • 15000:$0.0454
  • 24000:$0.0449
  • 45000:$0.0443
  • 90000:$0.0432
55GN01MA-TL-E
DISTI # 70465750
ON SemiconductorON Semi 55GN01MA-TL-E NPN RF Bipolar Transistor,0.07 A,10 V,3-Pin MCP
RoHS: Compliant
0
  • 100:$0.0840
  • 250:$0.0790
  • 500:$0.0750
  • 1250:$0.0720
55GN01MA-TL-EON Semiconductor 
RoHS: Not Compliant
3000
  • 500:$0.0800
  • 1000:$0.0800
  • 25:$0.0900
  • 100:$0.0900
  • 1:$0.1000
55GN01MA-TL-E
DISTI # 863-55GN01MA-TL-E
ON SemiconductorBipolar Transistors - BJT BIP NPN 70MA 10V FT=5.5G
RoHS: Compliant
9000
  • 1:$0.4500
  • 10:$0.2910
  • 100:$0.1250
  • 1000:$0.0960
  • 3000:$0.0730
  • 9000:$0.0650
  • 24000:$0.0610
  • 45000:$0.0540
  • 99000:$0.0520
55GN01MA-TL-E
DISTI # 8009389P
ON Semiconductor55GN01MA-TL-EBIP NPN 70MA 10V FT=5.5G, RL8450
  • 100:£0.1160
  • 250:£0.1120
  • 500:£0.1080
  • 1000:£0.0910
Imagen Parte # Descripción
NSVF4020SG4T1G

Mfr.#: NSVF4020SG4T1G

OMO.#: OMO-NSVF4020SG4T1G

RF Bipolar Transistors BIP NPN 150MA 8V FT=16G
NSVF5488SKT3G

Mfr.#: NSVF5488SKT3G

OMO.#: OMO-NSVF5488SKT3G

RF Bipolar Transistors BIP NPN 70MA 10V F
NSVF6003SB6T1G

Mfr.#: NSVF6003SB6T1G

OMO.#: OMO-NSVF6003SB6T1G

RF Bipolar Transistors BIP NPN 0.15A 12V FT=7G
NSVF4017SG4T1G

Mfr.#: NSVF4017SG4T1G

OMO.#: OMO-NSVF4017SG4T1G

RF Bipolar Transistors BIP NPN 100MA 12V FT=10G
UJ2-MIBH-4-SMT-TR

Mfr.#: UJ2-MIBH-4-SMT-TR

OMO.#: OMO-UJ2-MIBH-4-SMT-TR

USB Connectors USB 2.0 micro B jack 5 pin Horizontal SMT
NSVF6003SB6T1G

Mfr.#: NSVF6003SB6T1G

OMO.#: OMO-NSVF6003SB6T1G-ON-SEMICONDUCTOR

RF TRANS NPN 12V 7GHZ 6CPH
ER8-120P-0.8SV-5H

Mfr.#: ER8-120P-0.8SV-5H

OMO.#: OMO-ER8-120P-0-8SV-5H-HIROSE

120 Position High-Speed Transmission Plating Thickness 0.76 �m Straight Heade
UJ2-MIBH-4-SMT-TR

Mfr.#: UJ2-MIBH-4-SMT-TR

OMO.#: OMO-UJ2-MIBH-4-SMT-TR-CUI

USB JACK 2.0, MICRO B TYPE, 5
BM23PF0.8-40DS-0.35V(895)

Mfr.#: BM23PF0.8-40DS-0.35V(895)

OMO.#: OMO-BM23PF0-8-40DS-0-35V-895--HIROSE

Nuevo y original
NSVF4020SG4T1G

Mfr.#: NSVF4020SG4T1G

OMO.#: OMO-NSVF4020SG4T1G-ON-SEMICONDUCTOR

RF TRANS NPN 8V 16GHZ SC82FL/MCP
Disponibilidad
Valores:
Available
En orden:
1991
Ingrese la cantidad:
El precio actual de 55GN01MA-TL-E es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,56 US$
0,56 US$
10
0,36 US$
3,61 US$
100
0,16 US$
15,50 US$
1000
0,12 US$
119,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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