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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| RFP2N12L DISTI # RFP2N12L | Renesas Electronics Corporation | - Bulk (Alt: RFP2N12L) Min Qty: 1 Container: Bulk | Americas - 0 |
| Imagen | Parte # | Descripción |
|---|---|---|
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Mfr.#: RFP20-100RP OMO.#: OMO-RFP20-100RP-1190 |
Nuevo y original |
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Mfr.#: RFP20-50TP OMO.#: OMO-RFP20-50TP-1190 |
Nuevo y original |
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Mfr.#: RFP20-50TPC OMO.#: OMO-RFP20-50TPC-1190 |
Nuevo y original |
|
Mfr.#: RFP22N10 |
MOSFET N-CH 100V 22A TO-220AB |
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Mfr.#: RFP23N06LE OMO.#: OMO-RFP23N06LE-1190 |
Power Field-Effect Transistor, 23A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Mfr.#: RFP250-250-4X50-2 OMO.#: OMO-RFP250-250-4X50-2-1190 |
Nuevo y original |
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Mfr.#: RFP250375--4Z50-2 OMO.#: OMO-RFP250375--4Z50-2-1190 |
0 MHz - 2000 MHz 50 ohm RF/MICROWAVE TERMINATION |
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Mfr.#: RFP25N05+ OMO.#: OMO-RFP25N05--1190 |
MOSFET Transistor, N-Channel, TO-220AB |
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Mfr.#: RFP25N06 OMO.#: OMO-RFP25N06-1190 |
Nuevo y original |
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Mfr.#: RFP25N06L OMO.#: OMO-RFP25N06L-1190 |
Power Field-Effect Transistor, 25A I(D), 60V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |