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HN1B04FE-Y,LF

HN1B04FE-Y,LF
Mfr. #:
HN1B04FE-Y,LF
Fabricante:
Toshiba
Descripción:
Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
HN1B04FE-Y,LF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
HN1B04FE-Y,LF DatasheetHN1B04FE-Y,LF Datasheet (P4-P6)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Toshiba
Categoria de producto:
Transistores bipolares - BJT
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOT-563-6
Polaridad del transistor:
NPN, PNP
Configuración:
Doble
Voltaje colector-emisor VCEO Max:
50 V
Colector- Voltaje base VCBO:
60 V, - 50 V
Emisor- Voltaje base VEBO:
5 V
Voltaje de saturación colector-emisor:
100 mV
Corriente máxima del colector de CC:
150 mA
Producto de ganancia de ancho de banda fT:
80 MHz, 80 MHz
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
HN1B04
Ganancia de corriente CC hFE Max:
400
Embalaje:
Carrete
Marca:
Toshiba
Colector de CC / Ganancia base hfe Min:
120
Pd - Disipación de energía:
100 mW
Tipo de producto:
BJT - Transistores bipolares
Cantidad de paquete de fábrica:
4000
Subcategoría:
Transistores
Unidad de peso:
0.000106 oz
Tags
HN1B04FE-Y, HN1B04FE, HN1B04, HN1B0, HN1B, HN1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans GP BJT NPN/PNP 50V 0.15A 100mW 6-Pin ES T/R
***i-Key
TRANS NPN/PNP 50V 0.15A ES6
***et
ES6 PLN(LF),ACTIVE
***ical
Trans GP BJT NPN 50V 0.15A 320mW 3-Pin SOT-23
***el Electronic
SMCJ Series 38.9 V 1.5 kW Surface Mount Uni-Directional TVS Diode - DO-214AB
***enic
30nA 50V 320mW 150mA 290@2mA,5V 100MHz 170mV@100mA,5mA NPN +150¡æ@(Tj) SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS
***or
X34 PB-F SOT-23 TRANSISTOR FOR L
***-Wing Technology
Tape & Reel (TR) Surface Mount NPN SINGLE Bipolar (BJT) Transistor 180 @ 1mA 6V 150mA 150mW 100MHz
***ical
Trans GP BJT NPN 50V 0.15A Automotive 3-Pin SC-75 T/R
***peria
2PC4617 - NPN general-purpose transistor
***ment14 APAC
TRANSISTOR NPN 50V 0.15A SC-75; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:150mW; DC Collector Current:150mA; DC Current Gain hFE:180; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-416; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:200mV; Current Ic Continuous a Max:50mA; Gain Bandwidth ft Typ:100MHz; Hfe Min:180; Package / Case:SOT-416; Power Dissipation Pd:150mW; Termination Type:SMD; Transistor Type:General Purpose
***-Wing Technology
Tape & Reel (TR) Surface Mount PNP SINGLE Bipolar (BJT) Transistor 120 @ 1mA 6V 150mA 150mW 100MHz
***p One Stop
Trans GP BJT PNP 50V 0.15A Automotive 3-Pin SC-75 T/R
***peria
2PA1774 - PNP general-purpose transistor
*** Americas
PNP transistor in a SOT416 (SC-75) plastic package
***-Wing Technology
Tape & Reel (TR) Surface Mount NPN SINGLE Bipolar (BJT) Transistor 120 @ 1mA 6V 150mA 150mW 100MHz
***p One Stop
Trans GP BJT NPN 50V 0.15A Automotive 3-Pin SC-75 T/R
***peria
2PC4617 - NPN general-purpose transistor
***ment14 APAC
TRANSISTOR NPN 50V 0.15A SC-75; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:150mW; DC Collector Current:150mA; DC Current Gain hFE:120; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-416; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:200mV; Current Ic Continuous a Max:50mA; Gain Bandwidth ft Typ:100MHz; Hfe Min:120; Package / Case:SOT-416; Power Dissipation Pd:150mW; Termination Type:SMD; Transistor Type:General Purpose
***et
Trans GP BJT PNP 50V 0.15A 3-Pin S-Mini Embossed T/R
***enic
50V 150mW 150mA 70@2mA,6V 80MHz 100mV@100mA,10mA PNP +125¡æ@(Tj) SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS
***
TRANS S-MINI PLN
*** Source Electronics
Trans GP BJT NPN 50V 0.15A 150mW 3-Pin VESM T/R / TRANS NPN 50V 0.15A VESM
***enic
50V 150mW 150mA 200@2mA,6V 60MHz 150mV@100mA,10mA NPN +150¡æ@(Tj) SOT-723 Bipolar Transistors - BJT ROHS
***
VESM PLN ACTIVE
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Disponibilidad
Valores:
Available
En orden:
1992
Ingrese la cantidad:
El precio actual de HN1B04FE-Y,LF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,32 US$
0,32 US$
10
0,20 US$
2,04 US$
100
0,08 US$
8,50 US$
1000
0,06 US$
58,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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